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    2 TRANSISTOR Search Results

    2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
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    2 TRANSISTOR Price and Stock

    TE Connectivity 2-1437504-9

    8080-1G1=TRANSISTOR SOCKET ASS
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    TE Connectivity 3-1437504-2

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    TE Connectivity 6-6437504-2

    Conn Transistor Socket SKT 3 POS Solder ST Thru-Hole
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    TE Connectivity 4-1437504-2

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    TE Connectivity 2-1437504-6

    Conn Transistor Socket SKT 3 POS Solder ST Thru-Hole
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    2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 25C D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 -SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2 2 1 8 ,2 N 2 2 1 9 ,2 N 2 2 1 8 A, and 2 N 2 2 1 9 A a re epitaxial NPN silicon Planartransistors


    OCR Scan     		IM2219 fl23SbOS 102mA PDF

    2sk303

    Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
    Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4


    OCR Scan     		2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec


    OCR Scan     		2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A PDF

    A 933 S transistors

    Abstract: N 2222 2N222 2221-2N TE 2221
    Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors


    OCR Scan     		CK886 A 933 S transistors N 2222 2N222 2221-2N TE 2221 PDF

    B0415

    Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
    Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2


    OCR Scan     		BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		85MH10 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		UFN220 UFN221 UFN222 UFN223 PDF

    2m2222

    Abstract: 2N2222 2N2222Metal 2N2221 2221 2N 2222 2221-2N 222-1 2N2218 br 2222 npn
    Text: 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN • 2222 H IG H - S P E E D S W IT C H E S The 2N 2 2 1 8 , 2N Jedec T O -3 9 fo r m etal cases. T he y to 5 0 0 m A , and 2 2 1 9 , 2N 2221 and 2N 2 2 2 2 are silico n p lanar e p ita xia l NPN transistors in 2 N 2 2 1 8 and 2N 2 2 1 9 and in Jedec T C I-1 8 ( fo r 2N 2221 and 2N 2222)


    OCR Scan     		PDF

    VP0300M

    Abstract: VP0300B
    Text: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2


    OCR Scan     		VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P P-38283-- PDF

    2sb1569a

    Abstract: No abstract text available
    Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )


    OCR Scan     		2SB1275 2SB1236A 2SB1569A 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    transistor mpsa20 equivalent

    Abstract: bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five MPS-K22
    Text: 2 SILICON M P S - A M P S - K 2 M P S - K 2 2 , M P S - 2 K I , NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANN U LAR TRANSISTO RS . . designed fo r u n In audio, radio, a n d television applications. e e M P S - K 2 0 , M P S - K 2 1 , M P S - K 2 2 are 3, 5 and 9


    OCR Scan     		MPS-A20 MPS-K20, MPS-K22 MPS-K21, MPS-K22 MPS-A20, transistor mpsa20 equivalent bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET M Ff / PHOTOCOUPLER / PS2562-1 ,-2, PS2562L-1,-2 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T h e P S 2 5 6 2 -1 , -2 and P S 2 5 6 2 L -1 , -2 are o p tically cou ple d iso la to rs con tain ing a G aA s light em ittin g diode and an


    OCR Scan     		PS2562-1 PS2562L-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t


    OCR Scan     		2SA1016 1016K/2SC2362 2362K PDF

    2SC1226

    Abstract: 2SA699 2SA699A 2SC1226A
    Text: Power Transistors 2SA699, 2SA699A 2SA699, 2SA699A Silicon PNP Epitaxial Planar Type Package Dimensions Pow er Amplifier Com plem entary Pair with 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A • Feature • 5W output in com plem entary pair with 2SC1226, 2SC1226A Absolute Maxim um Ratings T a = 2 5 °C


    OCR Scan     		2SA699, 2SA699A 2SC1226, 2SC1226A 2SA699 2SC1226 2SA699A 2SC1226A PDF

    DUAL DIODE

    Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE
    Text: SOT-23 TRANSISTORS & DIODES SILICON ABRIJPT TUNER D ODES Type FM M V2101 F M M V 2 10 2 FM M V 2 1 0 3 FM M V 2 1 0 4 FM M V2105 FM M V 2 1 0 6 FM M V 2 1 07 FM M V 2 1 0 8 FM M V 2 1 0 9 max. Capacitance ratio f=1M Hz C 2/C 20 min. Q at V „ = 3V f = 50MHz


    OCR Scan     		OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 DUAL DIODE g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE PDF

    2SC1226

    Abstract: C1226 2SA699 226A 2SA699A 2SC1226A 2SA699 H
    Text: Power Transistors 2SC1226, 2SCI 226A 2 S C 1 2 2 6 , 2 S C 1 2 2 6 A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W output in com plem entary pair with 2SA699, 2SA699A


    OCR Scan     		2SC1226 2SC1226A 2SA699, 2SA699A 2SC1226, 2SC1226 2SC1226A C1226 2SA699 226A 2SA699A 2SA699 H PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 60 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8


    Original     		PDF

    2SB512P

    Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
    Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY


    OCR Scan     		MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 TIP298 2sb435 2sc1060 MH8500 PDF

    A 122 transistor

    Abstract: No abstract text available
    Text: SK 115 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8


    Original     		115MD10 A 122 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


    OCR Scan     		2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436 PDF

    2502L1

    Abstract: NEC PS2502
    Text: DATA SHEET NEC PHOTOCOUPLER PS2502-1 ,-2,-4, PS2502L-1 ,-2,-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION T h e P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are o p tica lly cou pled iso la to rs co n tain ing a G aA s light em ittin g diode


    OCR Scan     		PS2502-1 PS2502L-1 2502L1 NEC PS2502 PDF

    TO-252-2

    Abstract: TO252-2 2SD1758
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR PNP 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 2 A ICM: Collector-base voltage


    Original     		O-252-2 2SD1758 O-252-2 500mA 100MHz TO-252-2 TO252-2 2SD1758 PDF

    TRANSISTOR 2SC

    Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
    Text: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­


    OCR Scan     		2SC2522 2SC2523 50jU-A, 300jus TRANSISTOR 2SC transistor 2sc 18 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc PDF