SST31LF021E
Abstract: 32-PIN
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LF021E Advance Information FEATURES: • Organized as 256K x8 Flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • • Flash Fast Erase and Byte-Program:
|
Original
|
PDF
|
SST31LF021E
32-Pin
MO-142
SST31LF021E
|
M28F201
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F201: 2 Megabit 256K x 8 CMOS T6 FLASH MEMORY in PLCC32 INTRODUCTION The M28F201 is a 2 Megabit FLASH Memory organised as 256K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6 micron T6 process which has been especially developed for flash
|
Original
|
PDF
|
M28F201:
PLCC32
M28F201
PLCC32
TSOP32
|
PLCC32 package
Abstract: M28F201 PLCC32 QR110 TSOP32
Text: QUALIFICATION REPORT M28F201: 2 Megabit 256K x 8 CMOS T6 FLASH MEMORY in PLCC32 INTRODUCTION The M28F201 is a 2 Megabit FLASH Memory organised as 256K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6 micron T6 process which has been especially developed for flash
|
Original
|
PDF
|
M28F201:
PLCC32
M28F201
PLCC32
TSOP32
PLCC32 package
QR110
|
NEXUS FLASH ERASE
Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:
|
Original
|
PDF
|
SST31LH021
ye498404
NEXUS FLASH ERASE
353 flash
oasis
32-PIN
F01A
SST31LH021
31LH021
|
32-PIN
Abstract: F01A SST31LF021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LF021 Advance Information FEATURES: • Organized as 256K x8 Flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • • Flash Fast Erase and Byte-Program:
|
Original
|
PDF
|
SST31LF021
32-Pin
MO-142
F01A
SST31LF021
|
Bf 353
Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
|
Original
|
PDF
|
SST31LH021
D16116
Bf 353
NEXUS FLASH ERASE
oasis
32-PIN
F01A
SST31LH021
|
DP3SZ128512X16NY5
Abstract: SA10 SA11 SA12 SA13 Dense-Pac Microsystems
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
|
Original
|
PDF
|
30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
SA10
SA11
SA12
SA13
Dense-Pac Microsystems
|
D0000H-DFFFFH
Abstract: No abstract text available
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
|
Original
|
PDF
|
30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
D0000H-DFFFFH
|
1664t
Abstract: AT52BR1662T AT52BR1664T tba 790
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
11/01/xM
1664t
AT52BR1662T
AT52BR1664T
tba 790
|
Untitled
Abstract: No abstract text available
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
2212B
|
AT52BR1662
Abstract: No abstract text available
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
2212C
AT52BR1662
|
TSOP40
Abstract: M28F210 M28F220 mil-std-883* 2015
Text: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power
|
Original
|
PDF
|
M28F210/220,
M28F211/221,
TSOP48
TSOP40
M28F210/220
5/12V)
256Kx8
128Kx16
M28F211/221
TSOP40
M28F210
M28F220
mil-std-883* 2015
|
TSOP48 Thermal
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F210/220, 2Mbit x16 and M28F211/221, 2 Megabit (x8) FLASH MEMORY in SO44, TSOP48 and TSOP40 INTRODUCTION The M28F210/220 is a 2Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 256Kx8 bits or 128Kx16 bits. The M28F211/221 is a 2 Megabit FLASH Memory Boot Block Dual Power
|
Original
|
PDF
|
M28F210/220,
M28F211/221,
TSOP48
TSOP40
M28F210/220
5/12V)
256Kx8
128Kx16
M28F211/221
TSOP48 Thermal
|
ES29LV160F
Abstract: SA10
Text: ES29LV160F 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory ES29LV160F Excel Semiconductor Inc. ES29LV160F 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Main Characteristics Architectural Advantages
|
Original
|
PDF
|
ES29LV160F
16-Bit)
ES29LV160F
SA10
|
|
|
Equivalent of sw2 354
Abstract: sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Information FEATURES: • Organized as 512K x16 Flash + 128K x16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while
|
Original
|
PDF
|
SST32LH802
Sec498404
Equivalent of sw2 354
sw2 354
8080 microprocessor Architecture Diagram
cmos power TCP 8108
oasis
F-173
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am50DL9608G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am50DL9608G
16-Bit)
73-Ball
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am50DL9608G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am50DL9608G
16-Bit)
73-Ball
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am50DL9608G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am50DL9608G
16-Bit)
73-Ball
|
S29GL032A
Abstract: S29GL-A S71GL032A
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) pSRAM S71GL032A Based MCPs Cover Sheet Data Sheet (Advance Information)
|
Original
|
PDF
|
S71GL032A
16-bit)
1M/512K/256K
S29GL032A
S29GL-A
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am50DL9608G Stacked Multi-Chip Package MCP Flash Memory and Pseudo SRAM 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
|
Original
|
PDF
|
Am50DL9608G
16-Bit)
73-Ball
|
SA1127
Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Text: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM
|
Original
|
PDF
|
S71PL127JB0/S71PL129JB0/S71PL064JB0
16-bit)
S71PL-JB0
SA1127
SA1115
JEDEC Matrix Tray outlines
SA1117
|
Untitled
Abstract: No abstract text available
Text: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
|
OCR Scan
|
PDF
|
SST31LH021_
|
Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 MEGABIT FLASH EEPROM M ICROSYSTEM S D P Z 1 2 8 X 3 2 V I/D P Z 1 2 8 X 3 2 V IP DESCRIPTION: The D P Z 128X32VI/VIP is a 4 megabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH
|
OCR Scan
|
PDF
|
128X32VI/VIP
DPZ128X32VI/VIP
250ns
120mA
400fiA
150ns
170ns
200ns
|
Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
|
OCR Scan
|
PDF
|
SST32LH802
128Kx16
SST32LH802
|
