Untitled
Abstract: No abstract text available
Text: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)
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HX6256
1x10erad
1x101
1x109
28-Lead
28-Lead
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HC6364
Abstract: No abstract text available
Text: Honeywell 8K X 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES RADIATION OTHER • Fabricated using DESC Approved QML 1.2 urn RICMOS Process • Listed on SMD #5962-38294. Available as M IL-l-38535 QML Class Q and Class V • Total Dose Hardness through
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1x10e
1x109
1x101
IL-l-38535
HC6364
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RAD HARD TRENCH TRANSISTOR
Abstract: No abstract text available
Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER
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1x101
PIN23
HX6464/1
HX6464/2
HX6464/3
RAD HARD TRENCH TRANSISTOR
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Transistors smd A7H
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)
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1x10erad
1x101
HLX6228
32-Lead
Transistors smd A7H
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Untitled
Abstract: No abstract text available
Text: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Leff= 0.6 ^m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)
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1x10erad
1x101
1x109
HX6156
24-Lead
28-LeadFlat
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