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    68004-210HLF Amphenol Communications Solutions 68004-210HLF-B/S II 1X10 Visit Amphenol Communications Solutions
    G882AH101THR Amphenol Communications Solutions G882AH Series, Housing for Board-in plug, 2.5pitch, 1x10, Rightangle, crimp type, white Visit Amphenol Communications Solutions
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    1X10 Price and Stock

    Walsin Technology Corporation 0201X103K6R3CT

    CAP CER 10000PF 6.3V X5R 0201
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    DigiKey 0201X103K6R3CT Reel 14,000 15,000
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    0201X103K6R3CT Cut Tape 841 1
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    Avnet Asia 0201X103K6R3CT 10 Weeks 15,000
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    Amotech Co Ltd ABCUC 16S 01X 104K NDG

    CAP CER 100nF 16V X7R 0201
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    DigiKey ABCUC 16S 01X 104K NDG Reel 5,000 100
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    Prosperity Dielectrics Co Ltd FN21X101K500PXG

    CAP CER 0805 X7R 100PF 10% 50V
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    DigiKey FN21X101K500PXG Reel 4,000 1
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    Samsung Electro-Mechanics CL21X106MOQNNNE

    CAP CER 10UF 16V X6S 0805
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    DigiKey CL21X106MOQNNNE Cut Tape 3,080 1
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    Prosperity Dielectrics Co Ltd FS21X105K500EIG

    CAP CER 0805 X7R 1UF 10% 50V
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    DigiKey FS21X105K500EIG Reel 3,000 1
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    ComSIT USA FS21X105K500EIG 42,000
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    1X10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LXT944

    Abstract: PM3350 PM3351
    Text: PM3351 Preliminary Information ELAN - TM 1x100 SINGLE PORT 10/100 Mbit/s ETHERNET SWITCH FEATURES • Single-chip, 1-port, full duplex or half duplex, 10/100BaseT switching device for low-cost unmanaged and managed networks. • Expansion port supports a peak


    Original     		PDF PM3351 1x100 10/100BaseT address3351 10BaseT PM3350 10/100BaseT PMC-970278 LXT944 PM3350 PM3351

    6x6 tact

    Abstract: 6x6 tact switch 1X105
    Text: TACT SWITCHES MANUAL INSERTION Coplanar Mount SERIES EDA • Straight Snap-in PC Terminals • 6x6 mm size E D - A Height from PCB (h) Operating Force Life (Cycles) A B C D E F 1 100±50gf 2 160±50gf 3 260±70gf 1x105 1x105 1x105 4.3 5.0 7.0 9.5 13.0


    Original     		PDF 1x105 12VDC 2000/Bag 5x104 3x104 500/Bag 12x12 6x6 tact 6x6 tact switch 1X105

    1X100

    Abstract: LXT944 PM3350 PM3351 MDIO clause 45
    Text: PM3351 ELAN 1X100 DATA SHEET PMC-970113 ISSUE 3 SINGLE PORT FAST ETHERNET SWITCH PM3351 ELAN 1X100 SINGLE PORT FAST ETHERNET SWITCH DATA SHEET ISSUE 3: FEBRUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3351 ELAN 1X100


    Original     		PDF PM3351 1X100 PMC-970113 PM3351 1X100 LXT944 PM3350 MDIO clause 45

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    RLT635_100G

    Abstract: No abstract text available
    Text: RLT635-100G TECHNICAL DATA High Power Visible Laser Diode Emitting Aperatur: 1x100 µm² Lasing wavelength: 635 nm, typ. Max. optical power: 100 mW Package: 9 mm PIN CONNECTION: 1 Laserdiode cathode 2) Laserdiode anode 3) n.c. Absolute Maximum Ratings Tc = 25°C)


    Original     		PDF RLT635-100G 1x100 635nm rlt635 RLT635_100G

    hx6228

    Abstract: MIL-PRF38535
    Text: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6228 1x106 1x1011 1x1012 1x10-10 32-Lead hx6228 MIL-PRF38535

    UM DIODE

    Abstract: vcsel array
    Text: AVAP - 1x10MM Multi-mode VCSEL array Features • • • • 1x10 VCSEL array 850 nm wavelength range High wavelength uniformity Other configurations available on request Electro-optical characteristics for individual lasers (T = 25°C) Parameter Threshold current


    Original     		PDF 1x10MM 1x10MM UM DIODE vcsel array

    Untitled

    Abstract: No abstract text available
    Text: OCXO CMOS Output High Performance HCD681 Specifications Product Parameters ࡯ Ageing per day at despatch : < 1x10-9 < 5x10-10 < 2x10-10 ࡯ ˿ ࡯ Frequency stability: < 1x10-7 per year (option D) < 2x10-8 per year (option F) < 1x10-9 per 10% change in VDD


    Original     		PDF HCD681 1x10-9 5x10-10 2x10-10 1x10-7 2x10-8 5x10-13

    Untitled

    Abstract: No abstract text available
    Text: OCXO CMOS Output - Fast Warm Up HCD686 Specifications Product Parameters ࡯ Ageing per day at despatch : < 1x10-9 < 5x10-10 < 2x10-10 ࡯ ˿ ࡯ Frequency stability: < 1x10-7 per year (option D) < 2x10-8 per year (option F) < 1x10-9 per 10% change in VDD


    Original     		PDF HCD686 1x10-9 5x10-10 2x10-10 1x10-7 2x10-8 5x10-13

    5 PEN PC TECHNOLOGY apllications

    Abstract: No abstract text available
    Text: DATA SHEET PM PMC-970113 ISSUE 3 PMC-Sierra, Inc. PM3351 e l a n 1x100 SINGLE PORT FAST ETHERNET SWITCH PM3351 ELAN 1X100 SINGLE PORT FAST ETHERNET SWITCH DATA SHEET ISSUE 3: FEBRUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


    OCR Scan     		PDF PMC-970113 PM3351 1x100 PM3351 5 PEN PC TECHNOLOGY apllications

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan     		PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


    OCR Scan     		PDF HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2

    Untitled

    Abstract: No abstract text available
    Text: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free


    OCR Scan     		PDF HS-26C31RH 1x109 RS-422 Mil-Std-1835 CDIP2-T16 125PC 10sA/cm2 110pm 100pm

    LT1012 spice model

    Abstract: LT1012 500E LT1024
    Text: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,


    OCR Scan     		PDF U1012 LT1012 LT1024) 0E-05, 0E-11, 0E-01V/us, 9E-01V/us, 380uA LT1012 spice model 500E LT1024

    Untitled

    Abstract: No abstract text available
    Text: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS


    OCR Scan     		PDF 1x106 TM47320

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)


    OCR Scan     		PDF 1x106ra 1x109 1x101 28-Lead 36-Lead HX6656 MIL-STD-1835, CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    HR2340

    Abstract: sram pull down honeywell memory sram
    Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec


    OCR Scan     		PDF 1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


    OCR Scan     		PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    5962-95845

    Abstract: HX6356
    Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF 1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356

    Untitled

    Abstract: No abstract text available
    Text: HS-26C31RH HARRIS S E M I C O N D U C T O R æ Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si -Dose Rate Upset > 1x10* RAD/Sec (20nS Pulse) • Latchup Free


    OCR Scan     		PDF HS-26C31RH RS-422 HS1-26C31RH 038mm)