Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0 ~ 14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC
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MGFK30V4045
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NE6510179A
Abstract: NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 watt of output power CW with high linear
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NE6510179A
NE6510179A
NE6510179A-T1
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MGFK30V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK30V4045
MGFK30V4045
350mA
350mA,
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pHEMT 6GHz
Abstract: 0619 817A TC3957
Text: TC3957 REV2_20080516 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz
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TC3957
TC3957
TC1501N
pHEMT 6GHz
0619 817A
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
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rf transistor 6ghz 1w
Abstract: TC2571 TC1501
Text: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation
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TC2571
TC2571
TC1501
rf transistor 6ghz 1w
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sumitomo 131 datasheet
Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120008P
43dBm
OT-89
17GHz
KP028J
P0120008P
sumitomo 131 datasheet
DC 8881
ml marking
ml marking sot 89
ISO-14001
KP028J
RR0816
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NEC k 1760
Abstract: NE6510179A California Eastern Laboratories OR NEC NE6510179A-T1 ne651
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER NE6510179A GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +31.5 dBm TYP @ VDS = 3.5 V, IDSQ = 150 mA, f = 850 MHz, Pin = +20 dBm
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NE6510179A
200ure
NE6510179A-T1
24-Hour
NEC k 1760
NE6510179A
California Eastern Laboratories OR NEC
NE6510179A-T1
ne651
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NE6510179A
Abstract: No abstract text available
Text: 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
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MAAPGM0030-DIE
Abstract: No abstract text available
Text: RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability
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RO-P-DS-3021
MAAPGM0030-DIE
MAAPGM0030-Die
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Untitled
Abstract: No abstract text available
Text: RO-P -DS -3014 B Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability
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MAAPGM0027-DIE
MAAPGM0027-Die
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IC TA 7089 equivalent
Abstract: pcb antenna TA 7089 equivalent R13C
Text: MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious
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MRFIC1819
DCS1800/PCS1900
AN1599
MRFIC0913
MC33169
AN1602
GSM/DCS1800
IC TA 7089 equivalent
pcb antenna
TA 7089 equivalent
R13C
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APGM0029
Abstract: ND 2f CR-15 MAAPGM0029
Text: 3.6-6.5 GHz 1W Power Amplifier MAAPGM0029 RO-P-DS-3077 A Preliminary Information Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process Primary Applications APGM0029 YWWLLLL ♦ Wireless Local Loop
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MAAPGM0029
RO-P-DS-3077
APGM0029
MAAPGM0029
APGM0029
ND 2f
CR-15
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Untitled
Abstract: No abstract text available
Text: RO-P-DS-3014 A Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability
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RO-P-DS-3014
MAAPGM0027-DIE
MAAPGM0027-Die
10reform
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P012
Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120008P
43dBm
OT-89
P0120008P
P012
ISO-14001
KP028J
RR0816
marking c7 sot-89
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Amplifier 1W SOT-89
Abstract: No abstract text available
Text: ＥＳＬ100ＳＡ 1W ＳＯＴ89 Molded Package FET FEATURES ・Up to 3GHz Frequency Band ・1W Output Power ・SOT-89 SMT Package ・Die Attached with AuSn preforms ・RoHs Compliant DESCRIPTION The ESL100SA is a high performance GaAs MESFET housed in a low-cost SOT-89 molded package.
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OT-89
ESL100SA
05GHz
ESL100SA
Amplifier 1W SOT-89
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency
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NE6510179A
NE6510179A
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MGFK30V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK30V4045 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK30V4045
MGFK30V4045
350mA,
350mA
30GHz
31GHz
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a 1232 nec
Abstract: NE6510179A nec 1565 NEC TANTALUM
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency
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NE6510179A
NE6510179A
a 1232 nec
nec 1565
NEC TANTALUM
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NE6510179A
Abstract: hjfet
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = +20 dBm
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NE6510179A
NE6510179A
hjfet
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K30V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5
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30V4045
K30V4045
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GRM40X7R104K025BL
Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
Text: 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES_ • LOW COST PLASTIC SURFACE MOUNT PACKAGE NE6510179A NCDO lu 1 Units in mm PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: P o u t = + 31.5 dBm T Y P at V ds = 3.5 V, f = 900 MHz
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NE6510179A
24-Hour
GRM40X7R104K025BL
IC 14553
PT 1017
T5.5 murata
NE6510179A
NE6510179A-T1
ma 17393
atc 11
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NEC k 1760
Abstract: NE6510179A
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm
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NE6510179A
NE6510179A-T1
24-Hour
NEC k 1760
NE6510179A
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