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Abstract: No abstract text available
Text: Product specification 1SS369 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.54V(TYP.) :IR = 5 +0.1 1.6-0.1 A(MAX.) 0.77max +0.05 0.1-0.02 0.07max Low reverse current Absolute Maximum Ratings Ta = 25
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1SS369
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1SS369
Abstract: No abstract text available
Text: 1SS369 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Unit: mm Small package Low forward voltage: VF 3 = 0.97V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS369
1SS369
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1SS369
Abstract: No abstract text available
Text: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (MAX.) 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
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1SS369
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marking code SU
Abstract: 1SS369
Text: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (MAX.) 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
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1SS369
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OD-323
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1SS369
Abstract: No abstract text available
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS369 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.54V(TYP.) :IR = 5 +0.1 1.6-0.1 A(MAX.) 0.77max +0.05 0.1-0.02 0.07max
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1SS369
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1SS369
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Untitled
Abstract: No abstract text available
Text: 1SS369 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Unit: mm l Small package l Low forward voltage: VF 3 = 0.97V (typ.) l Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol
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1SS369
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Diode Su
Abstract: 1SS369 marking CODE su
Text: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
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1SS369
OD-323
OD-323
Diode Su
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marking CODE su
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1SS369
Abstract: marking CODE su
Text: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage • Low reverse current PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
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1SS369
OD-323
OD-323
1SS369
marking CODE su
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Untitled
Abstract: No abstract text available
Text: 1SS369 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Unit in mm Small package Low forward voltage: VF 3 = 0.97V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage
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1SS369
961001EAA2'
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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SS369
Abstract: No abstract text available
Text: 1SS369 TOSHIBA TOSHIBA DIODE 1 SS3 69 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Low Forward Voltage Low Reverse Current : Vp 3 = 0.54V (TYP.) *T ti = * „ A ÍM A Y 1 0.8 ±0.1 n MAXIMUM RATINGS (Ta = 25°C)
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1SS369
961001EAA2'
SS369
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SS369
Abstract: No abstract text available
Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING Unit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (TYP.) • Low Reverse Current : IR = 5,uA(MAX.) M A X IM U M RATINGS (Ta = 25°C)
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1SS369
SS369
20Sem
961001EAA2'
SS369
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1SS369
Abstract: No abstract text available
Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING U nit in mm • Small Package • Low Forward Voltage : V f 3 —0.54V (TYP.) • Low Reverse Current : Ir = 5/¿A (MAX.) 0.8 ±0.1 1.3 ± 0.1
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1SS369
961001EAA2'
1SS369
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S3 DIODE schottky
Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching
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1SS300
1SS301
1SS302
1SS322
1SS357
1SS367
1SS370
1SS372
1SS378
HN1D01FU
S3 DIODE schottky
S4 DIODE schottky
2SA1015
MARK MQ
1S1585
common anode schottky diode
DIODE MARK B
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