1SS357 Search Results

1SS357

Contextual Info: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071 1.80 .063(1.60) .006(.15)

Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF 3 = 0.54 (Typ.) Low Resistance Current I r = £>/“A (Max.) Small Package SC-70 il ¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode

s31 schottky diode

Abstract: 1SS357 diode ct-25
Contextual Info: 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current

1SS357

Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage VF 3 = 0.54 (Typ.) • Low Resistance C urrent IR — • Small Package SC-70 (Max.) M A X IM U M RATINGS (Ta = 25°C)

RB751V-40

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-323 Product Group Type No. SD101AWS – SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS / BAT43WS BAT54HS / BAT54WS MMDL301 BAS40WS MMDL770 1SS404

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

schottky 1ss357

Abstract: 1SS357
Contextual Info: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS Mechanical Data:

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount

1SS357

Abstract: schottky 1ss357
Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

1SS357

Contextual Info: 1SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING, Low Forward Voltage Low Resistance C urrent Sm all Package V f 3 = 0.54 (Typ.) I r = 5^A (Max.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC M aximum (Peak) Reverse Voltage

Contextual Info: Product specification 1SS357 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low forward voltage :VF 3 = 0.54 V(Typ) Low resistance current :IR = 5 +0.1 2.6-0.1 :SC-70 0.475 0.375 +0.05 0.1-0.02 Small package: 1.0max A (Max)

Contextual Info: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)

1SS357

Abstract: 1-1e1a
Contextual Info: 1SS357 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS357 ○ 超高速度スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順電圧特性が良い。 : VF 3 = 0.54V (標準)

s31 schottky diode

Abstract: SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357
Contextual Info: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z Low VF。 z Low IR APPLICATIONS z Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking

Contextual Info: 1SS357 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • Low Forward Voltage Low Resistance Current Small Package VF 3 =0.54 (Typ.) I r = 5,uA (Max.) SC-70 MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode

free download IR circuit diagram

Abstract: s31 schottky diode schottky 1ss357 1SS357
Contextual Info: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS 1 Mechanical Data:

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS357 Features • • • •  x High speed switching diode 45 Volt Switching Diode Surface mount

SS357

Abstract: diode marking NZ
Contextual Info: TOSHIBA 1SS357 TOSHIBA DIODE 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Resistance Current Small Package VF 3 = 0.54 (Typ.) Ir = £>/“A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)