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    Rochester Electronics LLC 1SS349(TE85L,F)

    1SS349 - SMALL-SIGNAL SCHOTTKY BARRIER D - Tape and Reel (Alt: 1SS349(TE85L,F))
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    Avnet Americas 1SS349(TE85L,F) Reel 4 Weeks 1,177
    • 1 $0.3099
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    • 100 $0.3099
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    Toshiba America Electronic Components 1SS349(TE85L,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS349(TE85L,F) 1,460
    • 1 $0.9
    • 10 $0.9
    • 100 $0.9
    • 1000 $0.36
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    Rochester Electronics 1SS349(TE85L,F) 12,000 1
    • 1 $0.3099
    • 10 $0.3099
    • 100 $0.2913
    • 1000 $0.2634
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    Chip1Stop 1SS349(TE85L,F) 3,950
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    • 100 $2.05
    • 1000 $1.67
    • 10000 $1.65
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    1SS349 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS349 Kexin Low Voltage High Speed Switching Original PDF
    1SS349 Toshiba Diode - Silicon Epitaxial Schottky Planar Type Original PDF
    1SS349 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS349 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS349 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS349 Toshiba DIODE Scan PDF
    1SS349TE85L Toshiba 1SS349 - DIODE 1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS349TE85L2 Toshiba 1SS349 - DIODE 1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS349TE85R Toshiba 1SS349 - DIODE 1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS349TE85R2 Toshiba 1SS349 - DIODE 1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS349 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA "ULTRA HIGH SPEED" DIODE

    Abstract: ifm 3000 1SS349 SCHOTTKY diode
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.49V (typ.) Low reverse current : IR = 50µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS349 SC-59 TD-236MOD TOSHIBA "ULTRA HIGH SPEED" DIODE ifm 3000 1SS349 SCHOTTKY diode

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Low voltage current: :IR = 50 1 A Max . 0.55 Low forward voltage: VF3 = 0.49V(Typ). +0.1 1.3-0.1 +0.1 2.4-0.1 Small package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


    Original     		PDF 1SS349 OT-23 100mA 500mA 1000mA

    maxim package marking

    Abstract: Rm25 1SS349
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.49V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage current: :IR = 50 0.55


    Original     		PDF 1SS349 OT-23 maxim package marking Rm25 1SS349

    MARKING toshiba

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS General Semiconductor diode marking 49 TOSHIBA DIODE 1SS349 TD236
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm Low forward voltage : VF 3 = 0.49V (typ.) Low reverse current : IR = 50µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS349 SC-59 TD-236MOD MARKING toshiba TOSHIBA "ULTRA HIGH SPEED" DIODE TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS General Semiconductor diode marking 49 TOSHIBA DIODE 1SS349 TD236

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Low voltage current: :IR = 50 1 A Max . 0.55 Low forward voltage: VF3 = 0.49V(Typ). +0.1 1.3-0.1 +0.1 2.4-0.1 Small package 0.4 3 2 +0.1 0.95-0.1 +0.1


    Original     		PDF 1SS349 OT-23 100mA 500mA 1000mA

    1SS349

    Abstract: No abstract text available
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.49V (typ.) z Low reverse current : IR = 50 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS349 SC-59 TD-236MOD 1SS349

    1SS349

    Abstract: 1SS349 SCHOTTKY diode ifm 3000
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.49V (typ.) l Low reverse current : IR = 50µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS349 SC-59 TD-236MOD 1SS349 1SS349 SCHOTTKY diode ifm 3000

    Untitled

    Abstract: No abstract text available
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.49V (typ.) l Low reverse current : IR = 50µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS349 236MOD 100mA 500mA 1000mA

    1SS349

    Abstract: No abstract text available
    Text: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.49V (typ.) z Low reverse current : IR = 50 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS349 SC-59 TD-236MOD 1SS349

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    bmdc

    Abstract: 93P3976 KENAI32 qm77 SMDC075 TOKYO-3 PLANAR kt 501 1608B A04 SOT23 R5C554
    Text: A B C D E F G H J K L M N DATE 05/13/03 05/27/03 9 TOKYO-2 PLANAR W/TOKYO-3 RAW CARD 8 7 6 5 4 3 2 1 41. 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 54. 55. 56. 57. 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. 70. 71. 72. 73. 74. 75. 76. 77. 78. 79.


    Original     		PDF J18095 J18095A 93P3976 MAY/27/2003 CK-408 LM392 1/16W bmdc 93P3976 KENAI32 qm77 SMDC075 TOKYO-3 PLANAR kt 501 1608B A04 SOT23 R5C554

    RPACK4

    Abstract: 81C61 RPACK4-22 tb6808f CA0036 SMDC075 TC7WB126FK z3M 80s G5 A 01 144C R8551
    Text: A B C D E F G H J K L M N DATE EC NO. P _ OCT/02/01 VER 0.86 9 Q PART NO. 9 DEVELOPMENT NO. TORONTO-4.5 PLANAR VER 0.86 8 7 6 5 4 3 2 1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31.


    Original     		PDF OCT/02/01 C9827) H8S/2169A PC87392 RPACK4 81C61 RPACK4-22 tb6808f CA0036 SMDC075 TC7WB126FK z3M 80s G5 A 01 144C R8551

    Untitled

    Abstract: No abstract text available
    Text: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package


    OCR Scan     		PDF 1SS349 SS349 50//A

    Untitled

    Abstract: No abstract text available
    Text: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS349 SS349 SC-59 O-236MOD SC-59

    1SS349

    Abstract: No abstract text available
    Text: TOSHIBA 1SS349 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS349 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • + 0.5 2.5-0.3 + 0.25 1.5-0.15 . Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/¿A (Max.) Small Package


    OCR Scan     		PDF 1SS349 SC-59 O-236MOD 1SS349

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737