Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1SS32 Search Results

    SF Impression Pixel

    1SS32 Price and Stock

    Toshiba America Electronic Components 1SS321,LF

    DIODE SCHOTTKY 10V 50MA S-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS321,LF Reel 36,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.03163
    		Buy Now
    1SS321,LF Cut Tape 4,408 1
    • 1 $0.18
    • 10 $0.112
    • 100 $0.0694
    • 1000 $0.04506
    • 10000 $0.04506
    		Buy Now
    Avnet Americas 1SS321,LF Reel 20 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.03576
    		Buy Now
    Mouser Electronics 1SS321,LF 11,465
    • 1 $0.22
    • 10 $0.154
    • 100 $0.063
    • 1000 $0.044
    • 10000 $0.03
    		Buy Now
    TTI 1SS321,LF Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.03
    		Buy Now

    Toshiba America Electronic Components 1SS322(TE85L,F)

    DIODE SCHOTTKY 40V 100MA USM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS322(TE85L,F) Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.04219
    		Buy Now
    1SS322(TE85L,F) Cut Tape 2,974 1
    • 1 $0.25
    • 10 $0.149
    • 100 $0.0929
    • 1000 $0.06021
    • 10000 $0.06021
    		Buy Now
    Mouser Electronics 1SS322(TE85L,F) 13,955
    • 1 $0.3
    • 10 $0.203
    • 100 $0.083
    • 1000 $0.058
    • 10000 $0.038
    		Buy Now
    Quest Components 1SS322(TE85L,F) 2,707
    • 1 $0.09
    • 10 $0.09
    • 100 $0.09
    • 1000 $0.0405
    • 10000 $0.0405
    		Buy Now
    1SS322(TE85L,F) 2,707
    • 1 $0.09
    • 10 $0.09
    • 100 $0.09
    • 1000 $0.0405
    • 10000 $0.0405
    		Buy Now
    1SS322(TE85L,F) 1,380
    • 1 $0.655
    • 10 $0.655
    • 100 $0.655
    • 1000 $0.262
    • 10000 $0.262
    		Buy Now
    1SS322(TE85L,F) 1,380
    • 1 $0.655
    • 10 $0.655
    • 100 $0.655
    • 1000 $0.262
    • 10000 $0.262
    		Buy Now
    TTI 1SS322(TE85L,F) Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.036
    		Buy Now
    Chip1Stop 1SS322(TE85L,F) Cut Tape 3,582
    • 1 -
    • 10 $0.183
    • 100 $0.122
    • 1000 $0.096
    • 10000 $0.0899
    		Buy Now
    EBV Elektronik 1SS322(TE85L,F) 25 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    JRH Electronics MTSW-110-21-S-S-325-LL

    CONN HEADER VERT 10POS 2.54MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTSW-110-21-S-S-325-LL Bulk 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TT electronics / BI Technologies P271-SS32BR10K

    PANEL POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P271-SS32BR10K Tray 630
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.28675
    • 10000 $11.28675
    		Buy Now
    Sager P271-SS32BR10K 210
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.17
    • 10000 $11.17
    		Buy Now

    TT electronics / BI Technologies P271-SS32AR1K270

    PANEL POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P271-SS32AR1K270 Tray 630
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.28675
    • 10000 $11.28675
    		Buy Now
    Sager P271-SS32AR1K270 210
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.17
    • 10000 $11.17
    		Buy Now
    Find more 1SS32 price and stock on Findchips.com

    1SS32 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS321 Kexin Low Voltage High Speed Switching Original PDF
    1SS321 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS321 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS321 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS321 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS321 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS321 Toshiba DIODE Scan PDF
    1SS321,LF Toshiba America Electronic Components SMALL SIGNAL SCHOTTKY BARRIER DI Original PDF
    1SS321TE85L Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85L2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85LF Toshiba 1SS321TE85LF - Diode Small Signal Schottky 12V 0.05A 3-Pin S-Mini T/R Original PDF
    1SS321TE85R Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85R2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS322 Kexin Low Voltage High Speed Switching Original PDF
    1SS322 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS322 Toshiba Japanese - Diodes Original PDF
    1SS322 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original PDF
    1SS322 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS322 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS322 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF

    1SS32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS32

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS322 SC-70 1SS32

    Untitled

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS322 100mA

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS321 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 2 = 0.42V (標準) : IR = 500nA (最大) z 外形が小さい。 z 順電圧が小さい。


    Original     		PDF 1SS321 SC-59 500nA 236MOD 1SS321

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low-Voltage High-Speed Switching z Low forward voltage: VF = 0.42 V typ. z Low reverse current: IR = 500 nA (max) z Small package: SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1SS321 SC-59 O-236MOD 1SS321

    diode MARKING A9

    Abstract: transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e


    Original     		PDF 1SS322 diode MARKING A9 transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS322 SC-70 1SS322

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF = 0.42V typ. z Low reverse current : IR = 500nA (max) z Small package : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS321 500nA SC-59 OT-23MOD) OT-23MOD 1SS321

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS321 500nA SC-59 OT-23MOD) 1SS321

    Untitled

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS321 500nA SC-59 OT-23MOD) 23MOD

    f1 smd marking

    Abstract: 1SS321 smd marking sc sot-23 sot 1301 F9 SOT23
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original     		PDF 1SS321 OT-23 SC-59 OT-23MOD) f1 smd marking 1SS321 smd marking sc sot-23 sot 1301 F9 SOT23

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS321 500nA SC-59 OT-23MOD) OT-23MOD 961001EAA2' 1SS321

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS322 ○ 低電圧高速スイッチング用 単位: mm : SC-70 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。


    Original     		PDF 1SS322 SC-70 100mA 1SS322

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS321 500nA SC-59 OT-23MOD) 1SS321

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS322 SC-70 1SS322

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		PDF 1SS321 OT-23 SC-59 OT-23MOD)

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t


    Original     		PDF 1SS322

    MARKING toshiba

    Abstract: 1SS322 TOSHIBA DIODE
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		PDF 1SS322 SC-70 MARKING toshiba 1SS322 TOSHIBA DIODE

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage


    OCR Scan     		PDF 1SS321 500nA OT-23MOD 1SS321

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B

    Untitled

    Abstract: No abstract text available
    Text: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1


    OCR Scan     		PDF 1SS322 SS322 SC-70

    diode ltn

    Abstract: No abstract text available
    Text: TOSHIBA 1SS321 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE <; <; 1 WÊÊF • 9ÊÊF 3 1 1 W ÊT ■ Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. -i 0.5 2.5 -0.3 + 0-25 Low Forward Voltage : 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package


    OCR Scan     		PDF 1SS321 500nA OT-23MOD) 961001EAA2' diode ltn

    1SS321

    Abstract: No abstract text available
    Text: TOSHIBA 1SS321 TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current • ÏR = 500nA (Max.) : SC-59 (SOT-23MOD) Small Package M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS321 500iiA SC-59 OT-23MOD) 961001EAA2' 1SS321

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm 2.1 ± 0.1 . Low Forward Voltage : V f ~ 0 •54V Typ. . Low Reverse Current : lR=5/iA(Max.) . Small Package : SC-70 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 1SS322 SC-70 100mA 11BVKRSE 1SS322

    SS321

    Abstract: No abstract text available
    Text: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS321 SS321 500nA SC-59 OT-23MOD) T0-236M0D SC-59 SS321