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    1SS30 Price and Stock

    Toshiba America Electronic Components 1SS307E,L3F

    DIODE GEN PURP 80V 100MA SC79
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS307E,L3F Reel 48,000 8,000
    • 1 -
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    • 10000 $0.024
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    Mouser Electronics 1SS307E,L3F 97,281
    • 1 $0.12
    • 10 $0.072
    • 100 $0.033
    • 1000 $0.025
    • 10000 $0.016
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    Toshiba America Electronic Components 1SS302A,LF

    DIODE ARRAY GP 80V 100MA SC70
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    DigiKey 1SS302A,LF Cut Tape 12,907 1
    • 1 $0.12
    • 10 $0.086
    • 100 $0.12
    • 1000 $0.03889
    • 10000 $0.03889
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    1SS302A,LF Digi-Reel 12,907 1
    • 1 $0.12
    • 10 $0.086
    • 100 $0.12
    • 1000 $0.03889
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    1SS302A,LF Reel 12,000 3,000
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    • 10000 $0.03275
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    Mouser Electronics 1SS302A,LF 854,372
    • 1 $0.19
    • 10 $0.115
    • 100 $0.052
    • 1000 $0.04
    • 10000 $0.027
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    TTI 1SS302A,LF Reel 3,000
    • 1 -
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    • 10000 $0.0267
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    Toshiba America Electronic Components 1SS301,LF

    DIODE ARRAY GP 80V 100MA SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS301,LF Cut Tape 8,916 1
    • 1 $0.11
    • 10 $0.077
    • 100 $0.11
    • 1000 $0.03503
    • 10000 $0.03503
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    1SS301,LF Digi-Reel 8,916 1
    • 1 $0.11
    • 10 $0.077
    • 100 $0.11
    • 1000 $0.03503
    • 10000 $0.03503
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    1SS301,LF Reel 6,000 3,000
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    • 10000 $0.02945
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    Avnet Americas 1SS301,LF Reel 3,000 24 Weeks 3,000
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    • 10000 $0.02086
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    Mouser Electronics 1SS301,LF 11,784
    • 1 $0.16
    • 10 $0.105
    • 100 $0.048
    • 1000 $0.042
    • 10000 $0.027
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    Arrow Electronics 1SS301,LF 3 3
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    • 10 $0.0478
    • 100 $0.0214
    • 1000 $0.0183
    • 10000 $0.0165
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    Quest Components 1SS301,LF 1,628
    • 1 $0.2
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    • 1000 $0.04
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    Chip1Stop 1SS301,LF 3
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    • 100 $0.0225
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    Toshiba America Electronic Components 1SS306TE85LF

    DIODE ARRAY GP 200V 100MA SC61B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS306TE85LF Digi-Reel 8,863 1
    • 1 $0.41
    • 10 $0.274
    • 100 $0.41
    • 1000 $0.13027
    • 10000 $0.13027
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    1SS306TE85LF Cut Tape 8,863 1
    • 1 $0.41
    • 10 $0.274
    • 100 $0.41
    • 1000 $0.13027
    • 10000 $0.13027
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    1SS306TE85LF Reel 6,000 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.11257
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    Mouser Electronics 1SS306TE85LF 23,060
    • 1 $1.97
    • 10 $1.64
    • 100 $1.26
    • 1000 $1.04
    • 10000 $0.817
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    Win Source Electronics 1SS306TE85LF 60,000
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    • 1000 $0.186
    • 10000 $0.156
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    Toshiba America Electronic Components 1SS307(TE85L,F)

    DIODE GEN PURP 30V 100MA S-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS307(TE85L,F) Digi-Reel 7,993 1
    • 1 $0.36
    • 10 $0.242
    • 100 $0.36
    • 1000 $0.11413
    • 10000 $0.11413
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    1SS307(TE85L,F) Cut Tape 7,993 1
    • 1 $0.36
    • 10 $0.242
    • 100 $0.36
    • 1000 $0.11413
    • 10000 $0.11413
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    1SS307(TE85L,F) Reel 6,000 3,000
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    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09832
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    Mouser Electronics 1SS307(TE85L,F) 7,243
    • 1 $0.5
    • 10 $0.31
    • 100 $0.197
    • 1000 $0.132
    • 10000 $0.087
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    Newark 1SS307(TE85L,F) Cut Tape 3,000 5
    • 1 $0.524
    • 10 $0.402
    • 100 $0.19
    • 1000 $0.106
    • 10000 $0.106
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    Chip1Stop 1SS307(TE85L,F) Cut Tape 1,493
    • 1 -
    • 10 $0.28
    • 100 $0.178
    • 1000 $0.119
    • 10000 $0.119
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    1SS307(TE85L,F) 47
    • 1 -
    • 10 $0.33
    • 100 $0.283
    • 1000 $0.283
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    Find more 1SS30 price and stock on Findchips.com

    1SS30 Datasheets (109)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS30 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Kexin Ultra High Speed Switching Application Original PDF
    1SS300 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) Original PDF
    1SS300 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS300 Toshiba Switching Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80) Original PDF
    1SS300 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS300 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Toshiba DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) Scan PDF
    1SS300 Toshiba DIODE Scan PDF
    1SS300,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 3 USM Original PDF
    1SS300TE85L Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS300TE85L Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) T/R Original PDF
    1SS300TE85R Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS301 Kexin Ultra High Speed Switching Application Original PDF
    1SS301 Toshiba Japanese - Diodes Original PDF
    1SS301 Toshiba Silicon diode for ultra high speed switching applications Original PDF
    1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF

    1SS30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


    Original     		PDF 1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor

    marking A1

    Abstract: 1SS308
    Text: Diodes SMD Type Ultra High Speed Switching Applications 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25


    Original     		PDF 1SS308 marking A1 1SS308

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5


    Original     		PDF 1SS304

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage


    Original     		PDF 1SS309

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage


    Original     		PDF 1SS308

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol


    Original     		PDF 1SS301

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5


    Original     		PDF 1SS303

    1SS300

    Abstract: No abstract text available
    Text: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS300 SC-70 1SS300

    1SS302

    Abstract: TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS
    Text: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS302 SC-70 1SS302 TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS

    Untitled

    Abstract: No abstract text available
    Text: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)


    Original     		PDF 1SS301 SC-70

    1SS101

    Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
    Text: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic


    Original     		PDF 1SS101 1SS301 ISO9002 0063ounce, 50mVp-p 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20

    marking A14

    Abstract: 1SS305
    Text: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.


    Original     		PDF 1SS305 marking A14 1SS305

    JEDEC SC-70

    Abstract: 1SS302
    Text: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS302 SC-70 JEDEC SC-70 1SS302

    1SS302

    Abstract: No abstract text available
    Text: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS302 SC-70 1SS302

    1SS300

    Abstract: No abstract text available
    Text: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )


    OCR Scan     		PDF 1SS300 SC-70 100mA 1SS300

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
    Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35


    OCR Scan     		PDF 1SS309 MA123 E1388 11MIN -16UNF' 48MAX DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC

    628B

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 628B DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    0A90

    Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
    Text: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y


    OCR Scan     		PDF 1K34A 455KHz) lN34AfflS 40MHz) 1K110 1K188FM 1S188FMÃ 1K188FM-1 0A90 2-1K261 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G

    SiS 6801

    Abstract: 1SS305
    Text: T — $ • y — N_ 7 .4 " ; 3 - > ? ÿ ' j 3 > Silicon Switching Diode 1SS305 i 7 J ls 7 t ° - K Silicon Epitaxial Diode High Speed Switching 4# • mm i t r IJ y K I C ffl t L T ^ i i T ’ -To -.m t) o § i Ä ^ $ l > o


    OCR Scan     		PDF 1SS305 SiS 6801 1SS305

    1SS308

    Abstract: No abstract text available
    Text: TOSHIBA 1SS308 1 SS308 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-74A : V f 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS308 SC-74A 961001EAA2' 1SS308

    1SS300

    Abstract: No abstract text available
    Text: TOSHIBA 1SS300 1 SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS300 SC-70 961001EAA2' 1SS300

    1SS306

    Abstract: No abstract text available
    Text: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)


    OCR Scan     		PDF 1SS306 SC-61 SC-61 961001EAA2' 1SS306