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    1SS201 Search Results

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    1SS201 Price and Stock

    PanJit Semiconductor SS20100FL_R1_00001

    Schottky Diodes & Rectifiers 100V,Schottky,SOD-123FL,2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS20100FL_R1_00001 3,168
    • 1 $0.44
    • 10 $0.277
    • 100 $0.132
    • 1000 $0.111
    • 10000 $0.076
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    PanJit Semiconductor SS20100FL-AU_R1_000A1

    Schottky Diodes & Rectifiers 100V,Schottky,SOD-123FL,2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SS20100FL-AU_R1_000A1 2,407
    • 1 $0.42
    • 10 $0.294
    • 100 $0.182
    • 1000 $0.118
    • 10000 $0.083
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    SOURIAU-SUNBANK VGE1SS201500M

    Circular MIL Spec Backshells
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    Mouser Electronics VGE1SS201500M
    • 1 $40.9
    • 10 $36.92
    • 100 $32.05
    • 1000 $30.29
    • 10000 $30.29
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    SOURIAU-SUNBANK VGE1SS201500L

    Circular MIL Spec Backshells
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VGE1SS201500L
    • 1 $40.9
    • 10 $36.92
    • 100 $32.05
    • 1000 $30.29
    • 10000 $30.29
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    SOURIAU-SUNBANK VGE1SS201510L

    Circular MIL Spec Backshells
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    Mouser Electronics VGE1SS201510L
    • 1 $48.66
    • 10 $45.79
    • 100 $39.21
    • 1000 $39.21
    • 10000 $39.21
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    1SS201 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS201 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS201 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS201 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF

    1SS201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage Unit in mm : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)


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    PDF 1SS201

    Untitled

    Abstract: No abstract text available
    Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SS201

    1SS201

    Abstract: 1ss20
    Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


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    PDF 1SS201 1SS201 1ss20

    1SS201

    Abstract: No abstract text available
    Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)


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    PDF 1SS201 1SS201

    DIODE 1SS201

    Abstract: 1SS201
    Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)


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    PDF 1SS201 DIODE 1SS201 1SS201

    1SS101

    Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
    Text: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic


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    PDF 1SS101 1SS301 ISO9002 0063ounce, 50mVp-p 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


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    PDF 3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS201 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Low Forward Voltage : Vjr 3 = 0.9V (Typ.) • Fast Reverse Recovery Time : trr = 1.6ns (Typ.) • Small Total Capacitance : C^ —Ö.9pF' (Typ.)


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    PDF 1SS201

    Untitled

    Abstract: No abstract text available
    Text: 1SS201 T O SH IB A 1 SS201 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : V f 3 = 0.9V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 0.9pF (Typ.)


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    PDF 1SS201 SS201 01//F

    1SS201

    Abstract: No abstract text available
    Text: 1SS201 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS201 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Low Forward Voltage : Vf 1 3 = 0.9V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : Cx = 0.9pF (Typ.)


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    PDF 1SS201 55MAX. 1SS201

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


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    PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode