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    Johanson Technology Inc QSCT251Q3R0B1GV001E

    CAP CER 3PF 250V NP0 0805
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    DigiKey QSCT251Q3R0B1GV001E Reel 36,000 4,000
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    QSCT251Q3R0B1GV001E Cut Tape 2,592 1
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    Newark QSCT251Q3R0B1GV001E Reel 5
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    Johanson Technology Inc QSCP251Q3R0B1GV001T

    CAP CER 3PF 250V C0G/NP0 0603
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    DigiKey QSCP251Q3R0B1GV001T Reel 28,000 4,000
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    QSCP251Q3R0B1GV001T Cut Tape 1,129 1
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    Johanson Technology Inc QSCF251Q3R0A1GV001T

    CAP CER 3PF 250V C0G/NP0 0402
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    DigiKey QSCF251Q3R0A1GV001T Reel 20,000 10,000
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    QSCF251Q3R0A1GV001T Cut Tape 1,714 1
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    Newark QSCF251Q3R0A1GV001T Reel 50
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    Johanson Technology Inc QCCF251Q3R6B1GV001T

    CAP CER 3.6PF 250V C0G/NP0 0402
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    DigiKey QCCF251Q3R6B1GV001T Reel 10,000 10,000
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    QCCF251Q3R6B1GV001T Cut Tape 9,999 1
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    • 1000 $0.05302
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    Johanson Technology Inc QCCP501Q3R3B1GV001T

    CAP CER 3.3PF 500V C0G/NP0 0603
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    DigiKey QCCP501Q3R3B1GV001T Reel 4,000 4,000
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    QCCP501Q3R3B1GV001T Cut Tape 3,024 1
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    1Q 3R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gsm mini bts schematic

    Abstract: SEMINAR ON 4G TECHNOLOGY LM5030 3G Base Station Coexistence of GSM, WCDMA and LTE APC single phase voltage stabilizer CPRI power amplifier transceiver 4G LTE lm3478 schematic BBU RRU xed 2013
    Text: Communications Infrastructure Solutions Guide national.com/comms 2009 Vol. 1 1Q 2008 Data Conversion Solutions . 7-11 Low Power DAC and Temperature Sensors.12


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    BBU RRU

    Abstract: 31002 LMK1000 LQFP-48 thermal pad bbu installation LM5001 13002 pwm smd Duplex LMX1601 4G base station power amplifier
    Text: Communications Infrastructure Solutions Guide national.com/comms 2009 Vol. 1 1Q 2008 Data Conversion Solutions . 7-11 Low Power DAC and Temperature Sensors.12


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    smoke alarm using IC NE 555

    Abstract: videophone pt100 amplifier schematic ina103 pt100 msp430 schematic ads1232 weigh scale schematic motor driver full bridge 10A with uc3638 rtd pt100 interface to 8051 3 phase dc converter afe circuit diagram igbt 24v 10A tl494 TEC H bridge that use uc3638 IC
    Text: Industrial Solutions Guide Amplifiers, Data Converters, Digital Signal Processors, Digital Temperature Sensors, Interface, Microcontrollers, Power Controllers, Power Management 1Q 2006 ➔ Inside Intelligent Sensors 4 Motor Control 19 Security 24 Test and Measurement


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    LMC71111

    Abstract: SMD SC70-5 spice MODEL FOR LM119 LM161 LMV7239 spice LM319 LM119 LMV243 LM7171 LMH6624
    Text: Amplifier Products Selection Guide 1Q 2006 National’s Amplifier Product Portfolio High Speed Amplifiers Fully Differential Buffers Voltage Feedback Fixed Gain Current Feedback Selectable Gain Multiplexers Differential Drivers VGAs Single 2:1 Linear in dB


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    PDF SC-70 OT-23 VIP10 LMC71111 SMD SC70-5 spice MODEL FOR LM119 LM161 LMV7239 spice LM319 LM119 LMV243 LM7171 LMH6624

    HDMI TO VGA MONITOR PINOUT

    Abstract: SEMINAR ON 4G TECHNOLOGY GSM BTS antenna sot23-5 code BBB GSM repeater HDMI to vga pinout microwave products HSPA Module LM5070 12v output DS90LV804TSQ
    Text: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide 2008 Vol. 1 1Q 2008 High-Speed Data Converters . 4-6 Low-Power Data Converters and Temperature Sensors . 7-8 RF Detectors and High-Speed Comparators.9 Precision and


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    SEMINAR ON 4G TECHNOLOGY

    Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
    Text: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications


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    PDF CDMA2000, SEMINAR ON 4G TECHNOLOGY HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater

    1Q 3R

    Abstract: MSI s1 UT54ACS279 UT54ACTS279 893Q S447
    Text: UT54ACS279/UT54ACTS279 Radiation-Hardened Quadruple S-R Latches FEATURES PINOUTS 16-Pin DIP Top View radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply 1R 1 16 VDD 1S1 2 15 4S 1S2 3 14 4R 1Q 2R 4 5 13 12 4Q 3S2 2S


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    PDF UT54ACS279/UT54ACTS279 16-Pin 16-lead UT54ACS279 UT54ACTS279 1Q 3R MSI s1 893Q S447

    circuit diagram of single phase water pump

    Abstract: 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine
    Text: +,7$&+, 3RZHU 6HPLFRQGXFWRU 3URGXFW - ,*%7 PRGXOH - +LJK 9ROWDJH ,& Motor driver, MOS/IGBT gate driver - 6XUJH 6XSSUHVVRU 3RZHU 'LRGH - +LJK 9ROWDJH )DVW 5HFRYHU\ 'LRGH +LWDFKL ,*%7 0RGXOHV


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    PDF 66HULHV DHM3FJ60 DHM3J120 DHM3C140 DHM3D160 DHM3FG80 DHM3FL80 82kHz DHM3HA80 DHM3HB120 circuit diagram of single phase water pump 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine

    Untitled

    Abstract: No abstract text available
    Text: ROYALOHM Thick Film Chip Resistors Performance Specification Temperature Coefficient 1Q-10Q 11Q- 100Q >100Q Short Time Overload ±400PPM/°C ±200PPM/°C ±100PPM/°C 0201: >100Q S±200PPM/°C ±5%: ±(2.0% + 0.1Q)Max ±1%: ±(1.0% + 0.1Q)Max Insulation Resistance


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    PDF 1Q-10Q 400PPM/ 200PPM/ 100PPM/ 10Q-1MQ 10Q-1M 10Mfl 2-10M

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    Abstract: No abstract text available
    Text: ROYALOHM AEC-Q200 Version Chip Resistor - HQ Series Performance Specification Test Item Test Methods Determine Specifiction Temperature Coefficient Measure between: -55 C •+125°C 1Q < R < 10Q : ±400PPM/°C 11Q< R<100Q : ±200PPM/°C 100Q<R<10M Q:±100PPM /°C


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    PDF AEC-Q200 400PPM/Â 200PPM/Â 100PPM

    29DL800b

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS X M 10 / 12/ BM29DL8 1Q/-12 FEATURES Single 3.0 V read, program, and erase Minimizes system level power requirements Simultaneous operations Read-while-Erase or Read-while-Program Compatible with JED EC-standard commands Uses same software commands as E2PROMs


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    PDF BM29DL8 1Q/-12 48-pin 44-pin F9802 29DL800b

    ROYALOHM as12

    Abstract: No abstract text available
    Text: ROYALOHM Anti-Surge Thick Film Chip Resistors Performance Specification Temperature Coefficient 1Q -9Í276 < ± 400PPM/°C* Humidity Steady State ±(3.0% + 0.1Q)Max 10Q~10M£2S± 100PPM/°C Load Life In Humidity ±(3.0% + 0.1£2)Max Short Time Overload ±(1.0% + 0.1i2)Max


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    PDF 400PPM/ 100PPM/ T/R-5000 2-10M 2-20M ROYALOHM as12

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A


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    PDF IRL6903S

    7 Segment Display GL

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDS —E 5 0 0 3R I —SY 9 ,5 0 [0 .3 7 4 ] 4,50 HO. 17 7] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X PARAMETER 25 ,00 [0 ,9 8 4 ] MIN Typ PEAK WAVELENGTH 20,32 [0 ,8 0 0 ] lf= 1Q m A MAX UNITS 590 FORWARD VOLTAGE


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    PDF E5003RI DBCK15URE 7 Segment Display GL

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM


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    PDF 072BZ-75/-1QÎ 168-pin, MB8504S072BZ MB81F16822B 168-pin F9711

    pbt wire

    Abstract: PCS-E honda
    Text: 1 R fi ^ 1Q-5 > 5.7 P 0 S .# n /2 + 1 2.54 4-R1 P0S.#1 4- < CD / Q O MARKING CP/N) / i i À FOR DISCRETE WIRE P 0 S .$ ( n / 2 ) 2 —M2.5 LAST POS. PART NO. NOTE 1.CONTACT PLATING GOLD(0.2 Mm) ON MATING AREA AND TERMINATION AREA ALL OVER NICKEL. 2. PART NO.


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    PDF 30AWG 27x24 PCS-E68PM PCS-E50PM PCS-E36PM PCS-E28PM pbt wire PCS-E honda

    Untitled

    Abstract: No abstract text available
    Text: 03.6 1Q ±0.1 0 1 .5 7 ±0.05 6PLCS. A /\ A ^ k & A 1A A r DATE CODE Ll_Lj-Ü | ^ 1 E= 3 'i=j=i' g -" [r"' 1 1 CN.1 P 0 S J 2 CN.1 POS.#1 02.77 ±M5 2PLCS. '- _—1 # 4-40U N C 31 9 4 CN.1 P 0 S J2 CN.1 PQ5.#1 CN.1 P0SJ26


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    PDF 4-40U 2--56UNC P0SJ26 52PLCS.

    Untitled

    Abstract: No abstract text available
    Text: F-198-1 ZLTMM-1Q&-02-T-D-265 % <SSftfc ZSTMM-110-09-S~D JS5 ZLTMM-110~03-G~D~425 5,r?' ’ f <•' . ,'N ' ’ " 2 mm SHRO •- S P E C IF IC A T IO N S M aterials: Mates with: 3Q T. SQW ESOT, H SMM MMS, TCSD - i- < • Board stacking oi /DC cable mating options


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    PDF F-198-1 -02-T-D-265 ZSTMM-110-09-S ZLTMM-110 1-800-SAMTEC-9

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 1 8 0 0 -4 2 0 0 MHz ■ 50 nSec Switching Speed ■ TTL Control ■ 24 Pin Flatpack 4 BIT RF IN / O U T 24 PART GND 23 GND 99 GND 21 GND on 2 GND 3 GND 4 GND 5 CONTI GND 1Q GND m GND 6 CONT2 7 8 CONT3 CONT4 GND 1 ft GND i1 r5 GND i1d4 9 GND 10


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    PDF 5OXTTLTO90%

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 15A)


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    PDF GT15J301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT5J301 GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 3.2 ±0.2 10 ±0.3 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/*s Max. (Iq = 5A)


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    PDF GT5J301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed : tf =0.30^8 (M ax.)


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    PDF GT10J312 GT10J312, GT10J312

    HP03

    Abstract: ROYALOHM 1206 1Q-10MQ HP06 HP10 0603 ROYALOHM HP05 ROYALOHM HP06
    Text: ROYALOHM High Power Thick Film Chip Resistors Performance Specification Temperature CoefRcient ±5%; ± 3.0% + 0.1fl Max ±1%: ±(0.5% + 0.1fì)Max ±5%: ±(3.0% + 0.1fí)Max ±1%: ±(1.0% + 0.1£î)Max ±5%: ±(3.0% + 0.1í2)Max ±1%: ±(1.0% + 0.1fí)Max


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    PDF 200PPM/Â 100PPM/Â T/R-5000 1/10W 10-10MQ 1Q-10MQ 20tfc0 HP03 ROYALOHM 1206 HP06 HP10 0603 ROYALOHM HP05 ROYALOHM HP06

    ROYALOHM 0805

    Abstract: HP05 ROYALOHM HP06 0603 ROYALOHM marking
    Text: ROYALOHM High Power Thick Film Chip Resistors Performance Specification Temperature CoefRcient ±5%; ± 3.0% + 0.1i2 Max Humidity (Steady State) m ~ 1 0 Q <± 200PPM /°C ±1%: ±(0.5% + 0.1fì)Max 11fi~10MQ<± 100PPM/°C Short Tim e Overload ±5%: ±(2.0% + 0.1£2)Max


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    PDF 200PPM 100PPM/ T/R-5000 02ftt0 ROYALOHM 0805 HP05 ROYALOHM HP06 0603 ROYALOHM marking