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1Nu5 Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128 Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p	OCR Scan	1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128	PDF
1N2222A Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549 Text: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244	OCR Scan	oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053	PDF
1N119 Abstract: INI183 1N1183 Text: jGrnitronicr - d e v ic e d a t a 6 4 C O M M E R C I A L S l f l E E T . m E t P O n t . M .Y . 1 1620 T E L . IS 16 6 2 3 - 9 4 0 0 FAX 5 1 0 ) T L X 2 9 S S 3 0 S E M I UR «33 -E 934 1Nl 1 83thru 1n1 1 9 0 VR—to 600 V lo = 35 A M&Jium current silicon rectifiers. Unique double	OCR Scan	83thru 1N1183R. 1N1184 1N1185 11ntinued) GDDG47b 1N119 INI183 1N1183	PDF
LT3973-3.3 Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731 Text: ^ discrete devices \| jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum	OCR Scan	1N1203 1N1203A 1N1203B 1N1204 1N1204A 1N1204B LT3973-3.3 IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731	PDF
LT3973-3.3 Abstract: L1117T-3.3 LT3971-3.3 Text: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)	OCR Scan	1NU88A 1N1189 1N1189A 1N1190 I190A LT3973-3.3 L1117T-3.3 LT3971-3.3	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76	PDF
1N93A Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526 Text: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur	OCR Scan	1N1183-90 1N248B-50EI 1N1195A-98A 1N2154-60 1N3765-68 1N1183Ã 1N3899-3903 1N3909-13 1N4529-30 1N5332 1N93A 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
1N1120 Abstract: 1N2484 1N342 1N2226 Text: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500	OCR Scan	1N3241 1N3242 1N3243 1N3244 1N3245 1H253 1N254 1N255 150J7 1N1120 1N2484 1N342 1N2226	PDF
IN3492 Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90	OCR Scan	3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r	PDF
A44E Abstract: GE A40B 14C40 1N2481 A40E in3900 1N5332 1N1184 1N3899 A44M Text: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur	OCR Scan	1N1183-90 1N248B-50EI 1N1195A-98A 1N2154-60 1N3765-68 1N1183Ã 1N3899-3903 1N3909-13 1N4529-30 1N5332 A44E GE A40B 14C40 1N2481 A40E in3900 1N1184 1N3899 A44M	PDF
lN34A Abstract: Germanium itt Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci Voltaga patian (»alt«) (mW) Ti m Vottap	OCR Scan	1N34A 1N38A 1N388 lN34A Germanium itt	PDF
1nu8 Abstract: 560-2 O287 n4795a 1N4803 N4799A 1NU815A Text: * I.-,• i t j , ‘ a . f a M > i w M < w w > i B i > i a _ - 3D7MM7M DODOllt, 7 I 30 7 ^74- EASTRON CORP '/7 Eastron £ p CHARACTERISTICS AND RATINGS @ 25°C EIA Capacitance 0 VR > Vdc 4 f * 1 MC Paft	OCR Scan	N4786A N4787A N4788A N4789A N4790A N4791A N4792A N4793A N4794A N4795A 1nu8 560-2 O287 1N4803 N4799A 1NU815A	PDF