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    1N649-1 DIODE Search Results

    1N649-1 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    1N649-1 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N649

    Abstract: No abstract text available
    Text: 1N649 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N649 Availability Online Store Diodes


    Original     		PDF 1N649 1N649 STV3208 LM3909N

    Untitled

    Abstract: No abstract text available
    Text: 1N649-1 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25


    Original     		PDF 1N649-1 Current400m Voltage600 Current50n Current25u StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS


    Original     		PDF 1N645-1N649 MIL-PRF-19500, 1N645 1N646 1N647 1N648 1N649 DO-35A

    1K60

    Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
    Text: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)


    Original     		PDF BA170 BAV17 BAV18 BAV19 BAV20 BAV21 BAX16 BAY71 BAY80 1N645 1K60 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645

    DIODE 1N649

    Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,


    Original     		PDF MIL-PRF-19500/240R MIL-PRF-19500/240P 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, MIL-PRF-19500. DIODE 1N649 diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN

    1N649-1

    Abstract: No abstract text available
    Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N645 THRU 1N649 JAN AND JANTX 1N645-1 THRU 1N649-1 MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE- 225 to 600 Volts .023 0.6 010. .0 1 8 (.0 5 ) CURRENT - 400 Milliamperes T FEATURES 1.50(38.1) 1.00(25.4) ♦ Qualified to MIL-S-19500/ 240E


    OCR Scan     		PDF 1N645 1N649 1N645-1 1N649-1 MIL-S-19500/ MIL-STD-202, JANTX1N645 1N649 1N649-1

    1N645

    Abstract: 1N645A 1N649 1N647 1N646 1N648 1N645 DO7
    Text: 1N645 THRU 1N649 1N645A Central semiconductor Corp. SILICON GENERAL PURPOSE DIODES 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N645 series types are Silicon Diodes designed for general purpose medium current applications.


    OCR Scan     		PDF 1N645 1N649 1N645A 1N646 1N647 1N648 1N645 DO7

    DIODE 1N649

    Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
    Text: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1


    OCR Scan     		PDF MIL-S-19500/240E 1N645, 1N647, 1N649, 1N645-1, 1N647-1 1N649-1, MIL-S-19500/240E, 1N647-1, DIODE 1N649 diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan JANTX 1N647-1 1N645-1 JANS

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


    OCR Scan     		PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649

    JTX 1N649-1

    Abstract: DSAIH00025213 1n646
    Text: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


    OCR Scan     		PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646

    1n645

    Abstract: 1N649 1n646 1n648
    Text: TYPES 1N645 THRU 1N649, 1N645A SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L -S 7 3 9 1 2 5 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 1 9 7 3 225 V to 600 V • 400 m A A V E R A G E • Rugged Double-Plug Construction m echa nica l d a ta


    OCR Scan     		PDF 1N645 1N649, 1N645A 1N646 1N649 1n648

    1n645

    Abstract: 1n649 1N64 1N646
    Text: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^


    OCR Scan     		PDF 1N645 1N649 MIL-S-19500 1n649 1N64 1N646

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    1n4948 Silicon Instrument

    Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
    Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio


    OCR Scan     		PDF 1N483B 1N486B 1N645 1N649 MII-STD-202/208 from-65 1N4245 1N4249 1N5059 1N5062 1n4948 Silicon Instrument byw76 diodes RG3A General instrument 1n4948 byw76

    1N4858

    Abstract: Schottky Diodes do-35 1N3595 1N457A 1N459A 1N485B 1N6263 1N645 1N647 1N649
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 cdh300 cdh333 1N645 1N647 1N649 1N4858 Schottky Diodes do-35 1N6263

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    DIODE 1N649

    Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
    Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V


    OCR Scan     		PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454

    1N6122A JANTX

    Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
    Text: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are


    OCR Scan     		PDF 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N6122A JANTX 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946

    MD4148

    Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
    Text: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*


    OCR Scan     		PDF 1N8211N829 1N9351N939 1N9411N945- CZ821CZ829 CZ935CZ939 CZ941CZ945 1N61031N6137 1N61391M6173 DD6103DD6137 DD6139DD6173 MD4148 MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2

    IN3599

    Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
    Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5


    OCR Scan     		PDF 1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a

    kpbc10

    Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
    Text: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A


    OCR Scan     		PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041

    IN3599

    Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
    Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0


    OCR Scan     		PDF DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


    OCR Scan     		PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17