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    onsemi 1N6373

    TVS DIODE 5VWM 9.4VC AXIAL
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    MDE Semiconductor Inc 1N6373

    TVS DIODE UP 5VRWM 7.5VC
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    Littelfuse Inc 1N6373G

    TVS DIODE 5VWM 9.4VC AXIAL
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    Central Semiconductor Corp 1N6373 BK

    TVS DIODE 5VWM 7.5VC DO201
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    onsemi 1N6373RL4

    TVS DIODE 5V 9.4V AXIAL
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    Quest Components 1N6373RL4 20
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    1N6373 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N6373 General Semiconductor TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    1N6373 General Semiconductor TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    1N6373 MDE Semiconductor 5.00V 160A 1500W peak pulse power glass passivated junction transient voltage suppressor Original PDF
    1N6373 Microsemi Transient Voltage Suppressor Original PDF
    1N6373 Motorola Zener Transient Voltage Suppressors Unidirectional and Bidirectional Original PDF
    1N6373 On Semiconductor 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors Original PDF
    1N6373 On Semiconductor 1N6373 - DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN, Transient Suppressor Original PDF
    1N6373 Vishay Semiconductors TRANSZORB Transient Voltage Suppressors Original PDF
    1N6373 Central Semiconductor Scan PDF
    1N6373 International Semiconductor TRANSIENT VOLTAGE SUPPRESSOR Scan PDF
    1N6373 Motorola Switchmode Datasheet Scan PDF
    1N6373 Motorola European Master Selection Guide 1986 Scan PDF
    1N6373 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6373 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N6373 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1N6373A Motorola Zener Transient Voltage Suppressors Unidirectional and Bidirectional Original PDF
    1N6373-D On Semiconductor 1500 Watt Peak Power Mosorb TM Zener Transient Vol Original PDF
    1N6373-E3/51 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE Original PDF
    1N6373-E3/54 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE Original PDF
    1N6373-E3/73 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 5VWM 7.5VC 1.5KE Original PDF

    1N6373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.

    1N6377

    Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389


    Original     		PDF ICTE15C MPTE-45 1N6373 1N6381 1N6382 1N6389 ICTE-10C ICTE-12C ICTE-15C ICTE-18C 1N6377 1N6385 1N6389 MPTE-45 ICTE-12 equivalent MPTE-15

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction


    Original     		PDF ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05

    icte-5rlg

    Abstract: 12RL 1N6373 1N6374 1N6375 1N6376 1N6377 1N6380 1N6381 ICTE-36
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36) 1N6373/D icte-5rlg 12RL 1N6374 1N6375 1N6376 1N6377 1N6380 ICTE-36

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional


    Original     		PDF 1N6373 1N6389 MPTE-45C 1N6381 1N6382 IEC61000-4-5

    1N6373

    Abstract: 1N6374 1N6375 1N6376 1N6381 1N6382 1N6389 ICTE-36 MPTE-45
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) r14525 1N6373/D 1N6374 1N6375 1N6376 1N6382 1N6389 ICTE-36 MPTE-45

    UJT 2N2646 specification

    Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram

    "Transient Voltage Suppressor"

    Abstract: diode 1n6376 1N6373 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389 1N6381 1N6382 1N6389
    Text: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional


    Original     		PDF 1N6373 1N6389, MPTE-45C, 1N6389 1N6381 1N6382 1N6389 IEC61000-4-5 "Transient Voltage Suppressor" diode 1n6376 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):


    Original     		PDF 1N6373 1N6389 DO-201

    ICTE-5

    Abstract: No abstract text available
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) ICTE-5

    1N6373

    Abstract: 1N6376 1N6374 1N6375 1N6377 1N6381 1N6382 1N6389
    Text: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) 1N6373/D 1N6376 1N6374 1N6375 1N6377 1N6382 1N6389

    1.5KE 20A 1N6278A

    Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
    Text: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high


    Original     		PDF 1N5908/D N5908 1N6373/lCTE-5 1N6389/lCTE: MK145BP, 1.5KE 20A 1N6278A KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A

    Untitled

    Abstract: No abstract text available
    Text: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 1N6373: 1500 Watt MOSORB Transient Voltage Suppressor, 6.0 V Unidir For complete documentation, see the data sheet Product Description Mosorb devices are designed to protect voltage sensitive components from high volt-age, high energy transients. They have


    Original     		PDF 1N6373: 1N6373G 1N6373RL4G

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002

    1N63xx

    Abstract: 1N6373
    Text: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) 1N6373/D 1N63xx

    1N6373

    Abstract: 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6381 1N6382 1N6389 MPTE-45
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		PDF 1N6373 1N6381 ICTE-36, MPTE-45) r14525 1N6373/D 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6382 1N6389 MPTE-45

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: 1N6373 thru 1N6389 MPTE-5 thru MPTE-45C Transient Voltage Suppressor Breakdown Voltage 5.0 to 45 Volts Peak Pulse Power 1500 Watts Features  CASE: DO-201AD DO-27       Breakdown Voltages (VBR) from 5.0 to 45V 1500W peak pulse power capability with a 10/1000 s


    Original     		PDF 1N6373 1N6389 MPTE-45C DO-201AD DO-27) MPT-45 MPT-36 MPT-22 MPT-18 MPT-15

    Untitled

    Abstract: No abstract text available
    Text: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified


    OCR Scan     		PDF 1N6373 1N6389 1N5908 TDDD37fl

    in6376

    Abstract: IN6377 in6373 IN6378 IN6375 IN6379 IN-6375 lN6373 suppressors 1N6373
    Text: 1N6373 THRU 1N6381 +» Central Semiconductor Corp. Central semiconductor Corp. 1.5KW TRANSIENT SUPPRESSOR EPOXY MOLDED AXIAL LEAD CASE 145 A dam s Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N6373 Series types are Epoxy Molded Axial Lead Transient


    OCR Scan     		PDF 1N6373 1N6381 IN6373 1N6374 IN6375 IN6376 IN6377 IN6378 IN6379 IN-6375 lN6373 suppressors

    1N6373

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6373A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive com ponents from high vo lt­


    OCR Scan     		PDF 1N6373A 1A-02 1N6373