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    1N60 PACKAGE Search Results

    1N60 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    1N60 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N60 germanium diode

    Abstract: germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041
    Text: 1N60 GOLD BONDED GERMANIUM DIODE 0.41 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N60 Online Store 1N60 Diodes GOLD BONDED GERMANIU M DIODE Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF com/1n60 1N60 germanium diode germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-052

    UTC1N60

    Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-052 mosfet 1N60 1n60 1N60 TO92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052

    1n60b

    Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-052 1n60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 1N60-KW 1N60-KW QW-R205-054

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-252 O-220 QW-R502-052 1n60

    1N60 MOSfet

    Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 QW-R502-052 1N60 MOSfet 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220F2 OT-223 O-220 O-220F QW-R502-052

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6043 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6043 /10x1000Â 10x160Â 10x1000 10x1000Â

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6036 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6036 /0x1000Â 10x160Â 10x1000 10x1000Â

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6055A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6055A 10x1000Â 10x160Â 10x1000

    diode 1n6045

    Abstract: No abstract text available
    Text: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6045 /10x1000Â 10x160Â 10x1000 10x1000Â diode 1n6045

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6068 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6068 10x160Â 10x1000 10x1000Â

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6053 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6053 /10x1000Â 10x160Â 10x1000 10x1000Â

    diode 1n60

    Abstract: 1N60 diode
    Text: Part: 1N6040 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6040 10x1000Â 10x160Â 10x1000 diode 1n60 1N60 diode

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6047 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6047 /10x1000Â 10x160Â 10x1000 10x1000Â

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6041A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6041A 10x1000Â 10x160Â 10x1000

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6050 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6050 /10x1000Â 10x160Â 10x1000 10x1000Â

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N6040A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		PDF 1N6040A 10x1000Â 10x160Â 10x1000