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    1N5820 SMA Search Results

    1N5820 SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-174SMAX200-007 Amphenol Cables on Demand Amphenol CO-174SMAX200-007 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 7ft Datasheet
    CO-316SMAX200-004 Amphenol Cables on Demand Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft Datasheet
    CO-174SMAX200-003 Amphenol Cables on Demand Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet
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    1N5820 SMA Price and Stock

    Diodes Incorporated 1N5820

    Diode Schottky 20V 3A 2-Pin DO-201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5820 184
    • 1 -
    • 10 $1.88
    • 100 $1.31
    • 1000 $0.92
    • 10000 $0.92
    		Buy Now

    Taiwan Semiconductor 1N5820

    Diode Schottky 20V 3A 2-Pin DO-201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5820 6
    • 1 $0.492
    • 10 $0.492
    • 100 $0.492
    • 1000 $0.492
    • 10000 $0.1501
    		Buy Now

    1N5820 SMA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL PDF

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821 PDF

    FULL WAVE bridge RECTIFIER CIRCUITS

    Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original     		1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 FULL WAVE bridge RECTIFIER CIRCUITS 1N5821 TP2050 1N5820-D Motorola 1N5820 PDF

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier PDF

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821 PDF

    1N5820

    Abstract: 1N5821 1N5822 diode schottky 1N5822
    Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2


    Original     		1N5820 1N5822 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N5821 1N5822 diode schottky 1N5822 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC DO-201AD J-STD-002B JESD22-B102D 08-Apr-05 PDF

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 1N5822 data sheet 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


    Original     		1N5820 1N5822 DO-201AD 22-B106 2002/95/EC 2002/96/EC DO-201AD 2011/65/EU 2002/95/EC. PDF

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V Tj max. 125 °C DO-201AD Features Typical Applications • • • •


    Original     		1N5820, 1N5821 1N5822 DO-201AD DO-201AD J-STD-002B JESD22-B102s 08-Apr-05 1N5821 PDF

    2n3904 TRANSISTOR REPLACEMENT

    Abstract: 2n3904 replacement 2n3904 TRANSISTOR PNP ZTX788B 2N3904 TRANSISTOR REPLACEMENT table for transistor gate drive circuit for 2 transistor forward converter transistor 2n3904 1n4148 die 1N4148
    Text: Design Note 30 Issue 1 February 1996 High Speed Turn-off Circuit for PNP Pass Transistors Cost-Effective replacement of P-Channel MOSFETs L2 ZTX788B Input +Bat Q3 150µH Q1 1K 2N3904 Figure 1 Active Turn-off Circuit for High Current, Low Vce sat PNP. 1N5820


    Original     		ZTX788B 2N3904 1N5820 1N4148 ZTX788B OT223 150kHz -10mA* 2n3904 TRANSISTOR REPLACEMENT 2n3904 replacement 2n3904 TRANSISTOR PNP 2N3904 TRANSISTOR REPLACEMENT table for transistor gate drive circuit for 2 transistor forward converter transistor 2n3904 1n4148 die 1N4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection


    Original     		1N5820 1N5822 2002/95/EC 2002/96/EC DO-201AD DO-201AD 08-Apr-05 PDF

    1N5820

    Abstract: 1N5821 1N5822 JESD22-B102 J-STD-002
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection


    Original     		1N5820 1N5822 DO-201AD 2002/95/EC 2002/96/EC 18-Jul-08 1N5821 1N5822 JESD22-B102 J-STD-002 PDF

    Part Marking STMicroelectronics

    Abstract: ST Low Forward Voltage Schottky Diode DIODE 1N5822 1N5821 1N5822 data sheet forward converter LOW DROP POWER SCHOTTKY RECTIFIER 1N5820 1N5822
    Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD


    Original     		1N582x DO-201AD DO-201AD 1N5820 1N5821 1N5822 Part Marking STMicroelectronics ST Low Forward Voltage Schottky Diode DIODE 1N5822 1N5822 data sheet forward converter LOW DROP POWER SCHOTTKY RECTIFIER 1N5822 PDF

    1N5821

    Abstract: 1N5820 1N5822 1N5822 st
    Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD


    Original     		1N582x DO-201AD DO-201AD 1N5820 1N5821 1N5822 1N5822 1N5822 st PDF

    AIC1578CS

    Abstract: AIC1578 IRF9Z34 1N4148 1N5820 AIC1578CN MPP core
    Text: AIC1578 High-Efficiency, Step-Down DC/DC Converter FEATURES DESCRIPTION • 4V to 20V Input Voltage Operation. • High Efficiency up to 95% . The AIC1578 is a high performance step-down DC/DC converter, designed to drive an external P-channel MOSFET to generate programmable


    Original     		AIC1578 AIC1578 AIC1578CS IRF9Z34 1N4148 1N5820 AIC1578CN MPP core PDF

    1N5822 SMA

    Abstract: 1N5819 SS14 1N5819 SMA 1N5820 SMA D1FS6 1N5817 Shindengen 1n5817 sma diode Do214AC ss1340 SS13
    Text: SEMICONDUCTORS DIODES, Rectifier SCHOTTKY BARRIER A range of Schottky barrier rectifiers available in surface mount or through hole package styles. STO220 SMA Choice of current rating. Supplied taped and reeled. 1 Amp VRRM V Manufacturer: Invac Device &


    Original     		STO220 SMA/DO214AC, 1N5818 1N5817 1N5819 1N5821 1N5822 DO201AD 1N5820 1N5822 SMA 1N5819 SS14 1N5819 SMA 1N5820 SMA D1FS6 1N5817 Shindengen 1n5817 sma diode Do214AC ss1340 SS13 PDF

    4435 transistor so-8

    Abstract: 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos
    Text: AN007 High Efficiency LCD Monitor Power Design Using AIC1578 DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external form light loads to full loads, the AIC1578 uses the


    Original     		AN007 AIC1578 AIC1578 AIC1578CS CEM4435 AIC1085CM 1N5820 O-263 4435 transistor so-8 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos PDF

    n5822

    Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		1N5820/D 1N5820 1N5821 1N5822 1N5B22 n5822 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 1N5821 PDF

    BR320P

    Abstract: l 0850
    Text: MOTOROLA SC {DIODES/OPTO} 12E J> I b3h7ESS OGV'iS? =l I T-Ô 3 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s D ata. S h e e t SCH O T T K Y B A R R IE R R E C T IF IE R S A X IA L LEAD RECTIFIERS


    OCR Scan     		1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P BR320P l 0850 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP


    OCR Scan     		1N582x D0-201 1N5820 1N5821 PDF

    WSL-2512-R025

    Abstract: WSL-2512-R020 SL251 MAX767CAP
    Text: jv\s\yL\jy\ 19-0224; Rev 1; 5/94 5V-to-3.3V, Synchronous, Step-Down Power-Supply C ontroller The inductor, at 3.3nH for 5A, is physically at least five times smaller than inductors found in competing solu­ tions. All N-channel construction and synchronous rectifi­


    OCR Scan     		MAX767 769mm) WSL-2512-R025 WSL-2512-R020 SL251 MAX767CAP PDF