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    STMicroelectronics 1N5818

    DIODE SCHOTTKY 30V 1A DO41
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    Vishay Semiconductors 1N5818-E3-73

    DIODE SCHOTTKY 30V 1A DO204AL
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    Vishay Semiconductors 1N5818-E3-53

    DIODE SCHOTTKY 30V 1A DO204AL
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    Diotec Semiconductor AG 1N5818

    DIODE SCHOTTKY 30V 1A DO204AC
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    PanJit Group 1N5818_R2_00001

    SCHOTTKY BARRIER RECTIFIERS
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    1N5818 Datasheets (136)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5818 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5818 Comchip Technology 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Original PDF
    1N5818 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original PDF
    1N5818 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 Diodes Short Form Selection Guide Original PDF
    1N5818 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 Diotec Diode, 1A, 30V, Schottky Barrier Rectifier Original PDF
    1N5818 Diotec Si-Schottky-Rectifiers Original PDF
    1N5818 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF
    1N5818 Fagor 30 V, 1A schottky barrier rectifier Original PDF
    1N5818 Fairchild Semiconductor Schottky Rectifiers Original PDF
    1N5818 Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original PDF
    1N5818 Fairchild Semiconductor Schottky Barrier Rectifier Original PDF
    1N5818 FCI Diode, 1A, 30V, Schottky Barrier Diode Original PDF
    1N5818 Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5818 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 Good-Ark SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5818 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original PDF
    ...

    1N5818 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 1n5818

    Abstract: No abstract text available
    Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical


    Original
    VS-1N5818, VS-1N5818-M3 DO-204AL DO-41) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. diode 1n5818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,


    Original
    PD-20590 1N5818 1N5819 1N5818/ 1N5819 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT


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    1N5817 1N5819 1N5817 1N5818 PDF

    1N5818

    Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
    Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225


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    PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N5818, 1N5818 datasheets diode 1n5818 1N581X DO-204AL PDF

    datasheets diode 1n5819

    Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
    Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been


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    PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N581X 1N581X datasheets diode 1n5819 1N5818 1N5818-1N5819 DO-204AL PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    1N5818 DO-204AL 1N5818 11-Mar-11 PDF

    1N5818

    Abstract: DO-204AL
    Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original
    1N5818 DO-204AL 1N5818 18-Jul-08 DO-204AL PDF

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


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    1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA PDF

    MBR130P

    Abstract: MBR120P
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.


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    1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P 1N5817/MBR11EP/MBR120P 1N5818/MBR130P 1N5819/MBR140F MBR130P MBR120P PDF

    220NF

    Abstract: 100UF 1N4007 470nF C10B ferrite C5A data sheet 1N4007 diode diode 1n4007 datasheets diode 1n5818 STPS130A
    Text: D3a 1N4007 19 C4a 470nF C3a 100µF L2a C6a C5a 100µF 470nF 20 36 EXTM-A VCTRL-A 22 35 C9a 10µF EXTM-B VCTRL-B Vup-A VoTX-A 25 Ferrite Bead D4a 1N5818 D1a STPS130A L3a 11 LX-A 21 ISEL-A 34 ISEL-B 22µH Rsel-A 11KOhm C1 100µF C2 100nF C13a 10nF C10a 220nF


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    1N4007 470nF 1N5818 STPS130A 11KOhm 100nF BAT43 220nF 220NF 100UF 1N4007 470nF C10B ferrite C5A data sheet 1N4007 diode diode 1n4007 datasheets diode 1n5818 STPS130A PDF

    1N5818WB

    Abstract: 1N5819WB diode sod-123 marking code 120 1N5817WB
    Text: 1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    1N5817WB-1N5819WB 1N5817WB: 1N5818WB: 1N5819WB: OD-123 1N5817WB 1N5818WB 1N5819WB OD-123 1N5818WB 1N5819WB diode sod-123 marking code 120 1N5817WB PDF

    1N5819M

    Abstract: 1N5817M 1N5818M
    Text: 1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: 1N5817M 1N5818M 1N5819M Features • · · · · High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability


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    1N5817M 1N5818M 1N5819M MIL-STD-202, 1N5817M 1N5818M 1N5819M PDF

    1N5818

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V Tj max. 125 °C DO-204AL (DO-41) Features Mechanical Data • • • •


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    1N5817, 1N5818, 1N5819 DO-204AL DO-41) J-STD-002B JESD22-B102D 1N5818 PDF

    1N5819M

    Abstract: No abstract text available
    Text: 1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: 1N5817M 1N5818M 1N5819M Features • · · · · High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability Packaged for Surface Mount Applications


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    1N5817M 1N5818M 1N5819M MIL-STD-202, DS13001 1N5817M/1N5818M/1N5819M 1N5819M PDF

    1N5818

    Abstract: DO-204AL RS-296-D
    Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


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    1N5818 DO-204AL 1N5818 DO-204AL RS-296-D PDF

    1N5819

    Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES


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    M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips PDF

    1n4001 melf

    Abstract: BY253 BY254 1N5819M
    Text: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A


    OCR Scan
    1N5817 1N5819 DO-41 1N5817M 1N5819M 1N5818 1N5819 1N5818M 1n4001 melf BY253 BY254 1N5819M PDF

    1N5819a

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


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    1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts 1.0 lo AMPS « ta <°C) 3.0 25 25 25 25 25 50 75 80 ^ IFSM (AM PS) 2.0 Î CASE tn DO-41 * VRRM (VOLTS) 7 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4


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    1N5817 1N5818 1N5819 DO-41 DO-201 1N5820 1N5821 1N5822 DO-41 PDF

    SR560 DO-201

    Abstract: 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SR120 SR130 SR140
    Text: RECTRON ELECTRONIC 7blG24ü GGOOlbb 023 • RECT b4E D cRECTRON RECTIFIER SPECIALISTS SCHOTTKY BARRIER RECTIFIERS ^ \ ~ ^ ~ ~ ^ P R V V 20 40 35 30 45 60 50 C ASE lo ( a K ^ O . 1.0 1N5817 1N5818 - 1N5819 - 1.0 SR120 SR 1 3 0 - SR140 - - — SR16 0 SR 1 5 0


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    7blG24Ã 1N5817 1N5818 1N5819 DO-41 SR120 SR130 SR140 SR150 SR560 DO-201 1N5820 1N5821 1N5822 PDF

    IN5818

    Abstract: lN5819 1N5817 1N5818 1N5819 1N58I7
    Text: Datasheet 1N5817 1N5818 1N5819 vSemciconductor v n i iCorp. i SCHOTTKY BARRIER R E C T IF IE R • JEDEC DO-41 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    1N5817 1N5818 1N5819 DO-41 1N5817 1N5818 1N5819 IN5818 lN5819 1N58I7 PDF

    1N5819M

    Abstract: n5817 1N5817M 1N5818M Schottky MELF Package
    Text: 1N5817M / 1N5818M / 1 N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability Packaged for Surface Mount Applications Mechanical Data


    OCR Scan
    1N5817M /1N5818M /1N5819M MIL-STD-202, 1N5818M 1N5819M DS13001 1N5817M/1N5818M/1N5819M n5817 Schottky MELF Package PDF

    MBR140P

    Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
    Text: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R


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    1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P BR130P BR115P MBR140P 1N5817-19 J581 5819m PDF