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    1N53B

    Abstract: SCL-5679 OH MARKING diode 1N53BM 1N53BMR 1N53BR ASME-14 1N53B DIODE
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED Devices on this drawing may be used as a substitute for MIL-S-19500/186 which has been inactivated for new design. Prepared in accordance with ASME-14.100 REV STATUS OF PAGES Selected item drawing REV PAGES PMIC N/A


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    PDF MIL-S-19500/186 ASME-14 037Z3 1N53B 1N53BR, 1N53BM, 1N53BMR 08011-1N53B 08011-1N53BR 08011-1N53BM SCL-5679 OH MARKING diode 1N53BM 1N53BMR 1N53BR 1N53B DIODE

    crystal diode

    Abstract: 4126 transformer design details 1N53B Transformer Inspection Testing 1N53B DIODE military part marking symbols jan 1N53 1N53BM 1N53BMR 1N53BR
    Text: MIL-S-19500/186B i l FêbrUâry i$te5 SUPERSEDING MIL-S-19500/186A EL 18 October 1963 M i r .r r A P V QDTPr'TTT'Tr’ ÀTTn'M TYPES JAN-1N53B, JAN-1N53BR, JAN-1N53BM, AND JAN-1N53BMR This specification is mandatory for use by all Departments ailu AgenCicS Qi the D€pa.rtifi6nt Of PGi6fl5€.


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    PDF MIL-S-19500/186B MIL-S-19500/186A 1N53B, JAN-1N53BR, JAN-1N53BM, JAN-1N53BMR 1N53B 1N53BR 1N53BM 1N53BMR crystal diode 4126 transformer design details Transformer Inspection Testing 1N53B DIODE military part marking symbols jan 1N53 1N53BM 1N53BMR 1N53BR

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


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    PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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