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    Motorola Semiconductor Products 1N5145A

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    1N5145A Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5145A Knox Semiconductor GENERAL PURPOSE ABRUPT VARACTOR DIODES Original PDF
    1N5145A Knox Semiconductor GENERAL PURPOSE ABRUPT VARACTOR DIODE Original PDF
    1N5145A Motorola Silicon EPICAP Diodes Original PDF
    1N5145A Codi Semiconductor Voltage Variable Capacitors Scan PDF
    1N5145A Codi Semiconductor Voltage-Variable Capacitance (Tuning) Diodes Scan PDF
    1N5145A Crystalonics Voltage Variable Capacitance Diodes Data Book 1976 Scan PDF
    1N5145A International Semiconductor Voltage Variable Capacitance (Tuning) Diodes Scan PDF
    1N5145A Loral JEDEC Tuning Varactors, DO-7 Glass Package Scan PDF
    1N5145A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5145A Motorola The European Selection Data Book 1976 Scan PDF
    1N5145A Motorola European Master Selection Guide 1986 Scan PDF
    1N5145A MSI Electronics Abrupt / Hyperabrupt Glass Packaged Tuning Diodes Scan PDF
    1N5145A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5145A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5145A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5145A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5145A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5145A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5145ACHIP MSI Electronics 60V Vrrm, 27pF Capacitance Varactor Diode Scan PDF
    1N5145A+JAN Defense Electronics Supply Center 60V Vrrm, 27pF Capacitance Varactor Diode Scan PDF

    1N5145A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    varactor 1N5144

    Abstract: 1N5141 1N5148A 1N5139 1N5139A 1N5140 1N5140A 1N5141A 1N5142 1N5142A
    Text: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146


    Original     		1N5139 1N5148 1N5139A 1N5148A 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A varactor 1N5144 1N5141 1N5148A 1N5140 1N5140A 1N5141A 1N5142 1N5142A PDF

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 PDF

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


    Original     		MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 PDF

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


    Original     		OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856 PDF

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


    Original     		VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245 PDF

    MPS751 equivalent

    Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS


    Original     		MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor PDF

    mpsa63 replace

    Abstract: BC237 MPSA63 equivalent J111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit


    Original     		MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111 PDF

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original     		BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


    Original     		MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA PDF

    transistor equivalent CT 2n5551

    Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q


    Original     		1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter PDF

    BC237

    Abstract: MMBV2107 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


    Original     		BAV74LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MMBV2107 BCY72 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc


    Original     		2N5555 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    BC237

    Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819 PDF

    bc547 spice model

    Abstract: SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MRF9411 EQUIVALENT BC238 spice BF245 A spice BC559 SPICE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast


    Original     		curr218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MRF9411 EQUIVALENT BC238 spice BF245 A spice BC559 SPICE PDF

    MPSA44 equivalent

    Abstract: BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MPSA44 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO


    Original     		MPSA44 226AA) Sym218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSA44 equivalent BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE PDF

    BC237

    Abstract: msc2295
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors PNP Silicon 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MPQ2906 MPQ2907 MPQ2907A* *Motorola Preferred Device 14 MAXIMUM RATINGS 1 Symbol MPQ2906 MPQ2907 Collector – Emitter Voltage VCEO –40


    Original     		MPQ2906 MPQ2907 MPQ2907A* MPQ2907 MPQ2907A U218A MSC1621T1 MSC2404 MSD1819A BC237 msc2295 PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 PDF

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RATIO C '4V / C-60V MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz MIN NOM 1N5139 1N5139A 6.12 6.46 6.8


    OCR Scan     		1N5139 1N5148 1N5139A 1N5148A 1N5140 1N5140A 1N5141 1N5141A PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPICAP DIODES 1N5139,A . . are designed for electronic tuning and harmonic-generation applications, and provide solid-state reliability to replace mechanical tuning methods. thru • Guaranteed High-Frequency Q lN5148rA • Guaranteed W ide Tuning R ange


    OCR Scan     		1N5139 lN5148r 1N5148 L3b72S5 PDF

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218 PDF

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


    OCR Scan     		plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic PDF

    1n5139

    Abstract: No abstract text available
    Text: SILICON EPICAP DIODES 1N5139,A thru 1N5148,A . . . are designed for electronic tuning and harm onic-generation applications, and provide solid-state reliability to replace m echanical tuning methods. • Guaranteed High-Frequency Q • Guaranteed W ide Tuning Range


    OCR Scan     		1N5139 1N5148 IV01FS) PDF