1N5059
Abstract: No abstract text available
Text: 1N5059 Passivated rectifier. Repetitive peak reverse voltage 200 V. Average forward curr. Page 1 of 1 Enter Your Part # Home Part Number: 1N5059 Online Store 1N5059 Diodes Passivated rectifier. Repetitive peak reverse voltage 200 Transistors V. Average forward current 25deg ambient 2.5 A.
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1N5059
1N5059
25deg
com/1n5059
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave
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1N5059-1N5062
1N5059
1N5060
1N5061
1N5062
OD-57,
OD-57
MIL-PRF-19500,
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1N5062
Abstract: 1N5059 1N5060 1N5061 MBG044
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062
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M3D116
1N5059
1N5062
1N5062
1N5060
1N5061
MBG044
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1N5062
Abstract: 1N5059 1n5062 DO-15 1N5062 diode 1N5060 1N5061 DO-204AC
Text: 1N5059 . 1N5062 1N5059 . 1N5062 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2005-09-20 Nominal current Nennstrom 6.3±0.1 Type 62.5±0.5 Ø 3±0.05 Ø 0.8±0.05 Dimensions - Maße [mm] 2A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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1N5059
1N5062
DO-15
DO-204AC
UL94V-0
1N5062
1N5059
1n5062 DO-15
1N5062 diode
1N5060
1N5061
DO-204AC
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1N5062 diode
Abstract: 1N5060 1N5061 1N5061 vishay
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
1N5061 vishay
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DIODE 1N5060
Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
18-Jul-08
DIODE 1N5060
1n5060v
1N5060
Sinterglass
1N5059
1N5062
diode 1n5059
MIL-STD-750 METHOD 2026
1n5060 diode
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Untitled
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
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1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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1n5062 equivalent
Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060
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BYW52.
BYW56
BYW52
1N5059
BYW53
1N5060
BYW54
1N5061
BYW55
1N5062
1n5062 equivalent
1N5059 diode
1N5060
1N5062
BYW52
BYW53
BYW54
BYW55
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1N5060
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
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Original
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1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1N5060
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1n5060
Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
DIODE 1N5060
1N506
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1n5060v
Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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1N5059
1N5062
OD-57
MIL-STD-750,
1N5059
OD-57
1N5060
1N5061
D-74025
1n5060v
iSO 15765
1N5060
1N5061
1N5062
Diode 1N5062
1N5059 diode
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1N5062V
Abstract: 1N5059 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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1N5059
1N5062
MIL-STD-750,
1N5059
1N5060
1N5061
D-74025
07-Jan-03
1N5062V
1N5061
1N5062
DIODE 1N5060
1N5060
500MG
1N5059 diode
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Untitled
Abstract: No abstract text available
Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059
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BYW52.
BYW56
BYW52
1N5059
BYW53
1N5060
BYW54
1N5061
BYW55
1N5062
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Untitled
Abstract: No abstract text available
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading
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1N5059
1N5062
MILSTD-750,
1N5060
1N5061
1N5062
D-74025
09-Oct-00
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1N5062V
Abstract: 1N5059 1N5060 1N5061 1N5062
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
08-Apr-05
1N5062V
1N5060
1N5061
1N5062
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1N5062V
Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
D-74025
13-Apr-05
1N5062V
1N5062
1N5060
1N5061
iso 15765
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BYW54
Abstract: 1n5062 equivalent 1N5059 diode BYW54 equivalent BYW56 1N5059 1N5060 1N5061 1N5062 BYW52
Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059
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BYW52.
BYW56
BYW52
1N5059
BYW53
1N5060
BYW54
1N5061
BYW55
1N5062
BYW54
1n5062 equivalent
1N5059 diode
BYW54 equivalent
BYW56
1N5059
1N5060
1N5061
1N5062
BYW52
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1N5059
Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification
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M3D116
1N5059
1N5062
1N5062
1N506
diode 1n5059
1n5062 equivalent
1N5062 diode
MBG044
1N5060
1N5061
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PDF
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diode 1n5059
Abstract: 1N5062 1N5061 1n5059 MBG044 1N5062 diode 1N5060 1N5059 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification
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M3D116
1N5059
1N5062
diode 1n5059
1N5062
1N5061
MBG044
1N5062 diode
1N5060
1N5059 diode
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1n5062 equivalent
Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060
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BYW52.
BYW56
BYW52
1N5059
BYW53
1N5060
BYW54
1N5061
BYW55
1N5062
1n5062 equivalent
1N5060
1N5062
BYW52
BYW53
BYW54
BYW55
BYW56
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1N5059
Abstract: 1N5060 1N5061 1N5062 1N5061 vishay
Text: 1N5059.1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose
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1N5059.
1N5062
1N5059
1N5060
1N5061
45K/W,
100K/W,
D-74025
24-Jun-98
1N5059
1N5060
1N5061
1N5062
1N5061 vishay
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PDF
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1N506
Abstract: No abstract text available
Text: 1N5059.1N5062 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose
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1N5059.
1N5062
1N5059
1N5060
1N5061
1N5062
45K/W,
D-74025
24-Jun-98
1N506
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1N5059
Abstract: No abstract text available
Text: • bbSBTBl □□2LCÌ13 151 BIAPX N AMER PHILIPS/DISCRETE h^E 1N5059 to 5062 T> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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1N5059
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T34 rectifier
Abstract: No abstract text available
Text: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and
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DDEbT13
1N5059
7Z88032
bb53531
002b51fl
002b515
T34 rectifier
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