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    1N23H Price and Stock

    IDEC Corporation CW1K-3AE11N2-3H

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    IDEC Corporation CW4K-3DE11N2-3H

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    IDEC Corporation CW4K-3GE11N2-3H

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    IDEC Corporation CW1K-3HE11N2-3H

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    Master Electronics CW1K-3HE11N2-3H
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    IDEC Corporation CW4K-3CE11N2-3H

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    1N23H Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N23H MicroMetrics S - x Band Point Contact Mixer Diode Original PDF
    1N23H MicroMetrics S - X Band Point Contact Mixer Diodes Original PDF
    1N23H Unknown Silicon Point Contact Mixer Diodes Scan PDF
    1N23H Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23H Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N23HM MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23HM Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23HM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23HMR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23HMR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23HMR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23HR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23HR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23HR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N23H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N23 diode

    Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
    Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original
    PDF CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100

    CS100

    Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
    Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


    Original
    PDF CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C

    JAN1N23WG

    Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
    Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED


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    1n415c

    Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
    Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed


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    PDF CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    IN23C

    Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
    Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low


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    PDF DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


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    PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    1N21* Diode Detector Holder

    Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C
    Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description


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    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


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    PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


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    PDF DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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