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    1N23CR DIODE Search Results

    1N23CR DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    1N23CR DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N23CR

    Abstract: No abstract text available
    Text: 1N23CR Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N23CR Availability Online Store


    Original     		PDF 1N23CR 1N23CR DO-22 STV3208

    1N21B

    Abstract: 1n23 cv102
    Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor


    Original     		PDF 500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    1N21B diode

    Abstract: 1N1132 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26
    Text: M IL-S-19500/362 3 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER rm rrm o JL I i ' H i û ix tiio o t v tti A IN U 1 \T 1 1 o n n Ai>i X X Ú 4 X V This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/362 1N1132 1N1132R 1N1132 1N1132R. MIL-S-19500/362 MIL-S-19500. MIL-S-19500 1N21B diode 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1N263 JAN

    Abstract: 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq
    Text: KIL-S-19500/19U U Jaauary 1Q6A OTPKRaZDIHQ^ MIL-3-19500/¿91 28. March 1961 ISUTJUII SpKCIFIQITTOS SEMTOORDUCrOR DEVICE, DIODE, QEHKAKTOH, MUSH TIPS JAH-1I263 Tble specification hag been approved by the Pepartaent of Defense and in aftndfttorr fqf Uie ta^ne IwpartacptB of


    OCR Scan     		PDF KIL-S-19500/19U SDPKR38DIHQ KIL-S-19500A91 JAH-1I263 300FE 1673-7l4-e66/3Â 1N263 JAN 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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    dr 25 germanium diode

    Abstract: 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838
    Text: MTT._.C_1 QROn/uA/ ATA4U U AV VVV/ 10 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR d e v ic e , d io d e , g e r m a n iu m , m ix e r TYPE IN I838 T his specification is m andatory fo r use by all D ep a rt­ m ents and A gencies of the D epartm ent of Defense.


    OCR Scan     		PDF 95OO/364 INI838 dr 25 germanium diode 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17