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    1N23CR Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N23CR MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23CR Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23CR Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N23CR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N23CR ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF

    1N23CR Datasheets Context Search

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    1N23CR

    Abstract: No abstract text available
    Text: 1N23CR Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N23CR Availability Online Store


    Original     		PDF 1N23CR 1N23CR DO-22 STV3208

    1N21B

    Abstract: 1n23 cv102
    Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor


    Original     		PDF 500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102

    FGFA

    Abstract: 1N23E sft 43 1N23CR 9375MHz 1N23CMR 1N23D 1N23DM 1N23DR 1N23EM
    Text: - 166 - MI J& % a s * 1N23CMR Bn * * * * B£ B£ 0 'S Q1 1N23CR 1N23D 1N23DM 1N23DMR * 1N23DR Bn * 1N23EM B l am * 1N23E * 1N23BMR * 1N23ER * 1N23F * 1N23FM * 1N23FMR * 1N23P8 * 1N23G * 1N23GM * 1N23GMR * 1N23GR * 1N23WD * 1N23WDM * 1N23WE * 1N23WBM * 1N23WF


    OCR Scan     		PDF 1N23CMR 1N23CR 1N23D 1N23DM 1M230MR lN23CÃ ffi14 9375MHz, 1N23DR 1N23E FGFA sft 43 9375MHz 1N23EM

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    dr 25 germanium diode

    Abstract: 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838
    Text: MTT._.C_1 QROn/uA/ ATA4U U AV VVV/ 10 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR d e v ic e , d io d e , g e r m a n iu m , m ix e r TYPE IN I838 T his specification is m andatory fo r use by all D ep a rt­ m ents and A gencies of the D epartm ent of Defense.


    OCR Scan     		PDF 95OO/364 INI838 dr 25 germanium diode 1N21B diode 1N21B 1N23B Germanium diode F0 215 1N1838 1N23C germanium point contact diode 1N23CR INI838

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


    OCR Scan     		PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    1N21B diode

    Abstract: 1N1132 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26
    Text: M IL-S-19500/362 3 October 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER rm rrm o JL I i ' H i û ix tiio o t v tti A IN U 1 \T 1 1 o n n Ai>i X X Ú 4 X V This specification is mandatory for use by all D epart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/362 1N1132 1N1132R 1N1132 1N1132R. MIL-S-19500/362 MIL-S-19500. MIL-S-19500 1N21B diode 1N21B 1N23B 1N23CR diode 1N23C ADUV 1N23B diode 1N1132R 1N26

    1N263 JAN

    Abstract: 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq
    Text: KIL-S-19500/19U U Jaauary 1Q6A OTPKRaZDIHQ^ MIL-3-19500/¿91 28. March 1961 ISUTJUII SpKCIFIQITTOS SEMTOORDUCrOR DEVICE, DIODE, QEHKAKTOH, MUSH TIPS JAH-1I263 Tble specification hag been approved by the Pepartaent of Defense and in aftndfttorr fqf Uie ta^ne IwpartacptB of


    OCR Scan     		PDF KIL-S-19500/19U SDPKR38DIHQ KIL-S-19500A91 JAH-1I263 300FE 1673-7l4-e66/3Â 1N263 JAN 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17