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    1MX8 BIT LOW POWER CMOS STATIC RAM Search Results

    1MX8 BIT LOW POWER CMOS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    1MX8 BIT LOW POWER CMOS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cmos static ram 1mx8 5v

    Abstract: K6X8008C2B-TF55 K6X8008C2B-TB55 K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB70
    Text: Preliminary CMOS SRAM K6X8008C2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial draft October 31, 2002 0.1 Revised - Deleted 44-TSOP2-400R package type.


    Original     		K6X8008C2B 44-TSOP2-400R cmos static ram 1mx8 5v K6X8008C2B-TF55 K6X8008C2B-TB55 K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB70 PDF

    K6X8008T2B-TF55

    Abstract: K6X8008T2B-TF70 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
    Text: Preliminary CMOS SRAM K6X8008T2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial draft October 31, 2002 0.1 Revised - Deleted 44-TSOP2-400R package type.


    Original     		K6X8008T2B 44-TSOP2-400R K6X8008T2B-TF55 K6X8008T2B-TF70 K6X8008T2B-F K6X8008T2B-Q PDF

    K6X8008T2B-uf55

    Abstract: K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U
    Text: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		K6X8008T2B 44-TSOP2-400R K6X8008T2B-uf55 K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U PDF

    K6T8008C2M-TB55

    Abstract: K6T8008C2M
    Text: K6T8008C2M Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 22, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A


    Original     		K6T8008C2M K6T8008C2M-TB55 PDF

    K6X8008C2B-F

    Abstract: K6X8008C2B-TF55 cmos static ram 1mx8 5v K6X8008C2B K6X8008C2B-B K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70
    Text: K6X8008C2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product.


    Original     		K6X8008C2B 44-TSOP2-400R K6X8008C2B-F K6X8008C2B-TF55 cmos static ram 1mx8 5v K6X8008C2B-B K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 PDF

    K6X8008T2B-TF55

    Abstract: cmos static ram 1mx8 5v K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
    Text: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		K6X8008T2B 44-TSOP2-400R K6X8008T2B-TF55 cmos static ram 1mx8 5v K6X8008T2B-F K6X8008T2B-Q PDF

    K6X8008C2B-UF55

    Abstract: K6X8008C2B-UF K6X8008C2B K6X8008C2B-UQ70 K6X8008C2B-TF55 K6X8008C2BU cmos static ram 1mx8 5v K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q
    Text: K6X8008C2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product.


    Original     		K6X8008C2B 44-TSOP2-400R K6X8008C2B-UF55 K6X8008C2B-UF K6X8008C2B-UQ70 K6X8008C2B-TF55 K6X8008C2BU cmos static ram 1mx8 5v K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q PDF

    cmos static ram 1mx8 5v

    Abstract: K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-TB55 K6T8008C2M-TB70
    Text: K6T8008C2M Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 22, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A


    Original     		K6T8008C2M cmos static ram 1mx8 5v K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-TB55 K6T8008C2M-TB70 PDF

    1Mx8 bit Low Power CMOS Static RAM

    Abstract: cmos static ram 1mx8 5v EM680FV8AU EM680FV8AU-45LF EM680FV8AU-55LF EM680FV8AU-70LF 3.3v 1Mx8 static ram high speed
    Text: EM680FV8AU Series Low Power, 1Mx8 SRAM Document Title 1M x 8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft May 6, 2007 Preliminary 0.1 0.1 Revision Add to address A19 information


    Original     		EM680FV8AU 100ns 120ns 1Mx8 bit Low Power CMOS Static RAM cmos static ram 1mx8 5v EM680FV8AU-45LF EM680FV8AU-55LF EM680FV8AU-70LF 3.3v 1Mx8 static ram high speed PDF

    1Mx8 bit Low Power CMOS Static RAM

    Abstract: cmos static ram 1mx8 5v EM680FV8A 3.3v 1Mx8 static ram 3.3v 1Mx8 static ram high speed
    Text: EM680FV8A Low Power, 1Mx8 SRAM Document Title 1M x 8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft May 10, 2007 1.0 1’st Revision Change I/O information from I/O0~ I/O16 to I/O0~7 May 19, 2007


    Original     		EM680FV8A I/O16 EM680FV8AW 100ns 120ns 1Mx8 bit Low Power CMOS Static RAM cmos static ram 1mx8 5v EM680FV8A 3.3v 1Mx8 static ram 3.3v 1Mx8 static ram high speed PDF

    cmos static ram 1mx8 5v

    Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
    Text: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		KM688100 cmos static ram 1mx8 5v KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: AS6C8008A Family Low Power, 1Mx8 SRAM Document Title 1M x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Date 0.0 -. Initial Draft Aug. 7 2013 1.0 -. Change logo name & logo Sep 29 2013 Alliance Memory, Inc., 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA


    Original     		AS6C8008A PDF

    cmos static ram 1mx8 5v

    Abstract: EM681FV8A 3.3v 1Mx8 static ram high speed
    Text: EM681FV8A Low Power, 1Mx8 SRAM Document Title 1M x 8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft Nov. 14, 2007 Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea


    Original     		EM681FV8A 100ns 120ns cmos static ram 1mx8 5v EM681FV8A 3.3v 1Mx8 static ram high speed PDF

    K6T8008C2M

    Abstract: K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-TB55 K6T8008C2M-TB70 K6T8008C2MTF55
    Text: K6T8008C2M Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 22, 1999 Advance 1.0 Finalize - Adopt New Code system. January 7, 2000 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB55 K6T8008C2M-RB70 K6T8008C2M-TB55 K6T8008C2M-TB70 K6T8008C2MTF55 PDF

    cmos static ram 1mx8 5v

    Abstract: 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C
    Text: White Electronic Designs EDI8F81026C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. 1Mx8 bit CMOS Static RAM • Access Times 20 through 35ns


    Original     		EDI8F81026C EDI8F81026C 512Kx8 cmos static ram 1mx8 5v 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C PDF

    FBGA48

    Abstract: 1mx8 STK14EE8-T STK14EE8-BF45
    Text: STK14EE8 1Mx8 AutoStore nvSRAM Preliminary FEATURES DESCRIPTION • 25, 45 ns Read Access and R/W Cycle Time The Simtek STK14EE8 is an 8MB fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


    Original     		STK14EE8 STK14EE8 ML0068 FBGA48 1mx8 STK14EE8-T STK14EE8-BF45 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION AUGUST 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating


    Original     		IS62WV10248EALL/BLL IS65WV10248EALL/BLL 62/65WV10248EALL) 62/65WV10248EBLL) IS62WV10248EALL/ IS62WV10248EBLL ThisIS62WV10248EBLL-55TLI IS62WV10248EBLL-55BI IS62WV10248EBLL-55BLI IS62WV10248EBLL-45TLI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION JULY 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES •       High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating – 12 µW (typical) CMOS standby


    Original     		IS62WV10248EALL/BLL IS65WV10248EALL/BLL 62/65WV10248EALL) 62/65WV10248EBLL) IS62WV10248EALL/ IS62WV10248EBLL IS62WV10248EBLL-55TLI IS62WV10248EBLL-55BI IS62WV10248EBLL-55BLI IS62WV10248EBLL-45TLI PDF

    cmos static ram 1mx8 5v

    Abstract: cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C
    Text: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION • 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns • Data Retention Function (EDI8F81027LP )


    Original     		EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C cmos static ram 1mx8 5v cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C PDF

    EDI8F81027C

    Abstract: EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM
    Text: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION n 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns • Data Retention Function (EDI8F81027LP )


    Original     		EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM PDF

    EDI8F81024C

    Abstract: EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM
    Text: EDI8F81024C 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION n 1024Kx8 bit CMOS Static The EDI8F81024C is a 8Mb CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. n Random Access Memory • Access Times 70 thru 100ns


    Original     		EDI8F81024C 1024Kx8 EDI8F81024C 128Kx8 100ns EDI8F81024LP) EDI8F81024C70BSC EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM PDF

    1Mx8 bit Low Power CMOS Static RAM

    Abstract: AN 7470 cmos static ram 1mx8 5v EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
    Text: EDI8F81026C 1Megx8 SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging


    Original     		EDI8F81026C EDI8F81026C 512Kx8 EDI8F81026C25M6C EDI8F81026C25M6I. 01581USA 1Mx8 bit Low Power CMOS Static RAM AN 7470 cmos static ram 1mx8 5v EDI8F81026C20M6C EDI8F81026C25M6I EDI8F81026C35M6C PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81024C White Electronic Designs 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION n 1024Kx8 bit CMOS Static n Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks


    Original     		1024Kx8 100ns EDI8F81024LP) EDI8F81024C EDI8F81024C 128Kx8 singlF81024C70BSC EDI8F81024C85BSC PDF

    1431 T

    Abstract: No abstract text available
    Text: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on


    OCR Scan     		600-mil-wide 32-pin 30A143-00 27Sims 1431 T PDF