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    pc133 sdram

    Abstract: HYM4V33100DTYG-75
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 1Mx16bits 400mil 50pin 132pin pc133 sdram HYM4V33100DTYG-75

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		PDF KMM366F224CJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin KMM366F224CJ1

    Untitled

    Abstract: No abstract text available
    Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124CE2/CJ2 M53210124CE2/CJ2 1Mx16, M53210124C 1Mx32bits M53210124C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CW2/CB2 M53210224CW2/CB2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hyundai HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 400mil 50pin 132pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits 1Mx16bits 42-pin 72-pin M53210124DE2/DJ2

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224BJ1 KMM366F224BJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224BJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224BJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    Original     		PDF KMM366F224BJ1 KMM366F224BJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits 1Mx16bits 42-pin 72-pin M53210224DE2/DJ2

    K4F151611D

    Abstract: No abstract text available
    Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits M53210124D 1Mx16bits 42-pin 72-pin K4F151611D

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C224BJ KMM364C224BJ with Fast Page Mode 2M x 64 DRAM DIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224BJ is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C224BJ consists of eight CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF KMM364C224BJ KMM364C224BJ 1Mx16, 2Mx64bits 1Mx16bits 42-pin 400mil 16bits

    Untitled

    Abstract: No abstract text available
    Text: M53210224CE2/CJ2 DRAM MODULE M53210224CE2/CJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CE2/CJ2 M53210224CE2/CJ2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F224CJ1 KMM374F224CJ1 EDO Mode without buffer 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224CJ1 is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F224CJ1 consists of eight CMOS 1Mx16bits DRAMs


    Original     		PDF KMM374F224CJ1 KMM374F224CJ1 1Mx16 2Mx72bits 1Mx16bits 400mil 300mil 168-pin

    ks0164

    Abstract: 3231 audio ic hd3-33 KS0165 MPU-401 wavetable synthesizer digital reverb processor diagram samsung i2s MA10 MPU401
    Text: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wavetable synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The


    Original     		PDF KS0165 KS0165 32-voice 16-bit MPU-401 16-bit, MPU-401 ks0164 3231 audio ic hd3-33 wavetable synthesizer digital reverb processor diagram samsung i2s MA10 MPU401

    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original     		PDF EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) len471) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI

    Untitled

    Abstract: No abstract text available
    Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM332V204BT-L KMM332V224BT-L KMM332V224BT-L using1MX16, KMM332V20 1Mx16bits 44-pin 72-pin

    KMM5321200C2W

    Abstract: KMM5321200C2WG
    Text: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


    Original     		PDF KMM5321200C2W/C2WG KMM5321200CW/CWG KMM5321200C2W/C2WG 1Mx16, KMM5321200C2W 1Mx32bits 1Mx16bits KMM5321200C2WG

    KMM5322204C2W

    Abstract: KMM5322204C2WG
    Text: DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW/CWG to KMM5322204C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


    Original     		PDF KMM5322204C2W/C2WG KMM5322204CW/CWG KMM5322204C2W/C2WG 1Mx16 KMM5322204C2W 2Mx32bits cycles/16ms KMM5322204C2WG

    1MX16

    Abstract: KMM5361203C2W KMM5361203C2WG
    Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision .


    Original     		PDF KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW/CWG KMM5361203C2W/C2WG KMM5361203C2W KMM5361203C2WG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 374F 224B J1 KM M 374F 224B J1 EDO M o d e w i t h o u t b u f fe r 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224BJ1 is a 2Mx72bits Dynamic RAM consists ot eight CMOS 1Mx16bits DRAMs in SOJ 400mil


    OCR Scan     		PDF 1Mx16 KMM374F224BJ1 2Mx72bits 1Mx16bits 400mil 300mil 168-pin 374F224BJ1

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits

    KS0164

    Abstract: samsung schematics processor KS0174
    Text: KS0164 Multimedia Cl Cf*1 ELECTRONICS OVERVIEW The KS0164 wavetable synthesizer chip represents the state-ofthe-art in multimedia audio technology. The KS0164 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU and MPU-401 compatibility into a single chip.


    OCR Scan     		PDF KS0164 KS0164 32-voice 16-bit MPU-401 16-bit, samsung schematics processor KS0174

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E1 24BT KMM372E1 24 BT Fast Page with EDO Mo de 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh, 5V G E N E R A L DESCRI PTION F E A TU RE S The Samsung KM M372E124BT is a 1Mx72bits Dynamic RAM • Part Identification high density memory module. The Samsung KM M 372E124BT


    OCR Scan     		PDF KMM372E1 M372E124BT 1Mx72bits 372E124BT 1Mx16bits 400mil 300mil 16bits 48pin

    74LS245 buffer ic

    Abstract: KS0164 mpu 401 roland d5 multi timbral
    Text: KS0165 MULTIMEDIA AUDIO O V E R V IE W The KS0165wavetable synthesizer with ettect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The


    OCR Scan     		PDF KS0165 KS0165wavetable KS0165 32-voice 16-bit MPU-401 16-bit, 74LS245 buffer ic KS0164 mpu 401 roland d5 multi timbral