computer motherboard circuit diagram
Abstract: free circuit diagram of motherboard computer motherboard circuit diagrams INTEL 8042 CMA102 intel 28f800 CMA110 HT6542B 28F800 MOTHERBOARD CIRCUIT diagram
Text: Evaluation & Reference Boards Cogent Computer Systems, Inc. Cogent Modular Architecture CMA COGENT Description Description ◆ 32/64-bit 66MHz CMA CPU module slot ◆ 1Mbyte Intel 28F800 FLASH Memory The Heart of CMA CMA, Cogent Modular Architecture, is an extraordinarily flexible
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32/64-bit
66MHz
28F800
DS1642
ST16C552
HT6542B
32-Bit
computer motherboard circuit diagram
free circuit diagram of motherboard
computer motherboard circuit diagrams
INTEL 8042
CMA102
intel 28f800
CMA110
MOTHERBOARD CIRCUIT diagram
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sram 1mbyte 3.3v
Abstract: HMS25632J2V 256KX
Text: HANBit HMS25632J2V SRAM MODULE 1Mbyte 256K x 32-Bit 3.3V, 68-Pin JLCC Packaging Part No. HMS25632J2V GENERAL DESCRIPTION The HMS25632J2V is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of two 256K x 16 SRAMs mounted on a 68-pin, double-sided, FR4-printed circuit
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HMS25632J2V
32-Bit)
68-Pin
HMS25632J2V
x32-bit
68-pin,
HMS25632J2V-10
256KX
sram 1mbyte 3.3v
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HMS12864F8V
Abstract: A016 sram 1mbyte 3.3v 12NS120
Text: HANBit HMS12864F8V SRAM MODULE 1MByte 128K x 64 bit , 120-Pin SMM, 3.3V Part No. HMS12864F8V GENERAL DESCRIPTION The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit
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HMS12864F8V
120-Pin
HMS12864F8V
64-bit
120-pin,
HMS12864F8V-12
HMS12864F8V-15
HMS12864F8V-20
A016
sram 1mbyte 3.3v
12NS120
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stopwatch circuit diagram
Abstract: S1C17 12-DOT
Text: S1C17706 Low Power 16-bit Single Chip Microcontroller ● Low power MCU : lower operating voltage 1.8V, TBDuA/SLEEP, TBDuA/HALT ● Large capacity flash memory: 1MByte, font data available ● LCD driver: 160 SEG x 32 COM max. , pseudo 64 SEG x 64 COM display
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S1C17706
16-bit
64com
S1C17:
S1C17706
stopwatch circuit diagram
S1C17
12-DOT
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256Kx1 dram pinout
Abstract: No abstract text available
Text: SM536256 August 1994 Rev 2 SMART Modular Technologies SM536256 1MByte 256K x 36 CMOS DRAM Module General Description Features The SM536256 is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM536256
SM536256
72-pin,
256Kx4
256Kx1
70/80/100ns
256Kx1 dram pinout
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Untitled
Abstract: No abstract text available
Text: SMART SM532256 Modular Technologies February 12, 1997 1MByte 256K x 32 DRAM Module - 256Kx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Non-parity Access Time : 60/70/80ns Operation Mode : FPM
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SM532256
256Kx4
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
256Kx8
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Untitled
Abstract: No abstract text available
Text: Agilent Technologies E5900B Emulation Probes Data Sheet • Support for ARM7/ARM9/ARM9TDMI, MIPS, Motorola/IBM PowerPC 4xx, 6xx, & 8xx; MPC 82xx; MPC 74xx and M•Core processors • 10/100T LAN connectivity to industrystandard debuggers • Download speeds up to 1Mbyte/sec
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E5900B
10/100T
5988-2966EN
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sram 1mbyte 3.3v
Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
Text: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications
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PC755B
128Kx72
PCX745BVZFUxxxLE
PC7410M16MGxxxLE
PCX755B
BP123
sram 1mbyte 3.3v
16x16 bga
Multi-Chip Package MEMORY
TQFP 100 PACKAGE footprint
with or without underfill
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M-8G
Abstract: HMS25632M8G HMS25632Z8
Text: HANBit HMS25632M8G/Z8 HAN SRAM MODULE 1Mbyte 256K x 32-Bit BIT Part No. HMS25632M8, HMS25632Z8 GENERAL DESCRIPTION The HMS25632M8G/Z8 is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of eight 256K x 4 SRAMs mounted on a 64-pin,
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HMS25632M8G/Z8
32-Bit)
HMS25632M8,
HMS25632Z8
HMS25632M8G/Z8
x32-bit
64-pin,
32bit
M-8G
HMS25632M8G
HMS25632Z8
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Untitled
Abstract: No abstract text available
Text: SM344Q4AO85UUUU August 1997 Rev 1 SMART Modular Technologies SM344Q4AO85UUUU 1MByte 256K x 44 CMOS SRAM Secondary Cache Module General Description Features The SM344Q4AO85UUUU is a high performance, (1 Mbyte) static RAM Secondary Cache module for use with R4000 processor. It is organized as 256K words by
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SM344Q4AO85UUUU
SM344Q4AO85UUUU
R4000
80-pin,
256Kx4
128Kx8
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Untitled
Abstract: No abstract text available
Text: SM532X43085XLSX February 1996 Rev 0 SMART Modular Technologies SM532X43085XLSX 1MByte 256K x 32 CMOS, EDO, DRAM Module (Low Profile) General Description Features The SM532X43085XLSX is a high performance, EDO (Extended Data Out) 1-megabyte dynamic RAM module
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SM532X43085XLSX
72-pin,
256Kx16,
50/60/70ns
88WET
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OAK TECHNOLOGY
Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
Text: OAK T E C H N O L O G Y INC SSE P • bV E ^ M O S 0 0 0 0 1 7 5 <333 H 0 A K T —T - £ 2 .- 3 3 - if 5 " Oak Technology Inc August 1991 O T T -0 7 7 Extended High Resolution VGA Graphics Controller with 1MByte Video Memory Support DESCRIPTION The OTI-077 is a highly integrated, single chip Extended High Resolution VGA Graphics Controller compatible with
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b72T405
00D017S
OTT-077
OTI-077
OTI-067.
OTT-077
OTI-067,
1024x768
1280x1024
OAK TECHNOLOGY
oti-067
OTI067
oak technology oti 067
cga to vga
Hercules Graphics Card
oak oti-067
128x48
96x64
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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SMART Modular Technologies
Abstract: SM732C256PL-12 SM732C256PL-15
Text: ja SM732C256PL 1MByte 256K x 32 FLASH Module General Description Features The SM732C256PL is a high performance, 1Mbyte FLASH memory module organized as 256K words by 32 bits, in a 80-pin SIMM (single-in-line memory module) package. • High Density : 1Mbyte
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SM732C256PL
SM732C256PL
256Kx
80-pin
120/150ns
SMART Modular Technologies
SM732C256PL-12
SM732C256PL-15
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zd 501
Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based
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EDI8F64128C
128Kx64
66MHz
CELP2X80CS3Z48
EDI8F64128C
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
3S3D114
zd 501
D044 z
DD54
TME 57
Z3A18
55ZJ
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SM5810SI
Abstract: No abstract text available
Text: JUl ï B ’993 SM5810SI 1MByte IM x 8 Separate I/O CMOS DRAM Module General Description Features T h e S M 5810SI is a high perform ance, 1-m egabyte d ynam ic R A M m odule organized as 1M w ords by 8 bits (separate inputs and outputs), in a 30-pin, leadless,
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SM5810SI
5810SI
30-pin,
60/70/80ns
60/70/80ns)
W7777Â
H7////7777///
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Untitled
Abstract: No abstract text available
Text: JW. i 6 1993 SM581000A 1MByte 1M x 8 CMOS DRAM Module General Description The SM 581000A is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 8 bits, in a 30-pin, leadless, single-in-line memory module (SIM M ) package. The module utilizes two CMOS 1M x 4 dynamic RAMs
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SM581000A
81000A
30-pin,
60/70/80ns
60/70/80ns)
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Untitled
Abstract: No abstract text available
Text: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium
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EDI8F64128C
128Kx64
I8F64128C
128Kx8
EDI8F64128C15MMC
EDI8F64128C20MMC
EDI8F64128C25MMC
323D114
DDQ17Ã
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Untitled
Abstract: No abstract text available
Text: a WPSF256K32-27PJX M/HITE /MICROELECTRONICS 1MByte of SRAM & 1MByte of FLASH 256Kx32 SRAM/256Kx32 FLASH MODULE ADVANCED* FEATURES • 100,000 Erase/Program Cycles ■ Access Tim es of 25ns SRAM ■ Flexible Sector Architecture • One 8K word, tw o 4K word, one 16K word, and seven 32K
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WPSF256K32-27PJX
256Kx32
SRAM/256Kx32
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Untitled
Abstract: No abstract text available
Text: ' • ; ’’ >» CMÍ1TIT jflHjll S M 536256 A ugust 1991 Rev 1 HodularTedmoloqies SM536256 1MByte 256KX 36 CMOS DRAM Module General Description Features • High Density : 1Mbyte ■ Fast Access Time of 70/80/100ns (max.) ■ Low Power : 4.95/4.12/3.41W (max.) - Active (70/80/100ns)
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SM536256
256KX
72-pin,
22/xf
70/80/100ns
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Untitled
Abstract: No abstract text available
Text: H B 5 2 6 R 4 6 4 D B K - 1 0 /1 2 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte x 64 x 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a
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576-word
64-bit
ADE-203-674
HB526R464DBK
16-Mbit
HM5216805TB)
24C02)
144-pin
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Untitled
Abstract: No abstract text available
Text: ML IS »93 SM481000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 481000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP package. • • The module utilizes two CMOS 1M x 4 dynamic RAMs
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SM481000ALP
481000ALP
30-pin,
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS WINDOW RAM KM4232W259 D E S C R IP T IO N F E A T U R E S • 1MByte Frame-Buffer on a single chip The KM4232W 259 is a 1MByte Dual Ported DRAM • 1.6 G-Bytes/Second Internal Bus: with added features that accelerate graphic operations in a
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KM4232W259
KM4232W
256-bit
7U4143
71b4142
464C2
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Untitled
Abstract: No abstract text available
Text: HB526R464DBK-10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte X 64 X 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a
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HB526R464DBK-10/12
576-word
64-bit
ADE-203-674
HB526R464DBK
16-Mbit
HM5216805TB)
24C02)
144-pin
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