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    computer motherboard circuit diagram

    Abstract: free circuit diagram of motherboard computer motherboard circuit diagrams INTEL 8042 CMA102 intel 28f800 CMA110 HT6542B 28F800 MOTHERBOARD CIRCUIT diagram
    Text: Evaluation & Reference Boards Cogent Computer Systems, Inc. Cogent Modular Architecture CMA COGENT Description Description ◆ 32/64-bit 66MHz CMA CPU module slot ◆ 1Mbyte Intel 28F800 FLASH Memory The Heart of CMA CMA, Cogent Modular Architecture, is an extraordinarily flexible


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    PDF 32/64-bit 66MHz 28F800 DS1642 ST16C552 HT6542B 32-Bit computer motherboard circuit diagram free circuit diagram of motherboard computer motherboard circuit diagrams INTEL 8042 CMA102 intel 28f800 CMA110 MOTHERBOARD CIRCUIT diagram

    sram 1mbyte 3.3v

    Abstract: HMS25632J2V 256KX
    Text: HANBit HMS25632J2V SRAM MODULE 1Mbyte 256K x 32-Bit 3.3V, 68-Pin JLCC Packaging Part No. HMS25632J2V GENERAL DESCRIPTION The HMS25632J2V is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of two 256K x 16 SRAMs mounted on a 68-pin, double-sided, FR4-printed circuit


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    PDF HMS25632J2V 32-Bit) 68-Pin HMS25632J2V x32-bit 68-pin, HMS25632J2V-10 256KX sram 1mbyte 3.3v

    HMS12864F8V

    Abstract: A016 sram 1mbyte 3.3v 12NS120
    Text: HANBit HMS12864F8V SRAM MODULE 1MByte 128K x 64 bit , 120-Pin SMM, 3.3V Part No. HMS12864F8V GENERAL DESCRIPTION The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit


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    PDF HMS12864F8V 120-Pin HMS12864F8V 64-bit 120-pin, HMS12864F8V-12 HMS12864F8V-15 HMS12864F8V-20 A016 sram 1mbyte 3.3v 12NS120

    stopwatch circuit diagram

    Abstract: S1C17 12-DOT
    Text: S1C17706 Low Power 16-bit Single Chip Microcontroller ● Low power MCU : lower operating voltage 1.8V, TBDuA/SLEEP, TBDuA/HALT ● Large capacity flash memory: 1MByte, font data available ● LCD driver: 160 SEG x 32 COM max. , pseudo 64 SEG x 64 COM display


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    PDF S1C17706 16-bit 64com S1C17: S1C17706 stopwatch circuit diagram S1C17 12-DOT

    256Kx1 dram pinout

    Abstract: No abstract text available
    Text: SM536256 August 1994 Rev 2 SMART Modular Technologies SM536256 1MByte 256K x 36 CMOS DRAM Module General Description Features The SM536256 is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, single-in-line memory module


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    PDF SM536256 SM536256 72-pin, 256Kx4 256Kx1 70/80/100ns 256Kx1 dram pinout

    Untitled

    Abstract: No abstract text available
    Text: SMART SM532256 Modular Technologies February 12, 1997 1MByte 256K x 32 DRAM Module - 256Kx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Non-parity Access Time : 60/70/80ns Operation Mode : FPM


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    PDF SM532256 256Kx4 72-pin 60/70/80ns 300mil AMP-7-382486-2 AMP-822019-4 AMP-822110-3 256Kx8

    Untitled

    Abstract: No abstract text available
    Text: Agilent Technologies E5900B Emulation Probes Data Sheet • Support for ARM7/ARM9/ARM9TDMI, MIPS, Motorola/IBM PowerPC 4xx, 6xx, & 8xx; MPC 82xx; MPC 74xx and M•Core processors • 10/100T LAN connectivity to industrystandard debuggers • Download speeds up to 1Mbyte/sec


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    PDF E5900B 10/100T 5988-2966EN

    sram 1mbyte 3.3v

    Abstract: 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill PC755B PCX755B
    Text: PC755B Microprocessor + 1MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • PC755B RISC microprocessor • 8 Mbit of Synchronous Pipelined Burst SRAM configured as 128Kx72 L2-Cache • Extended temperature modules 2.0V (Core)/3.3V (I/0) for industrial and military applications


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    PDF PC755B 128Kx72 PCX745BVZFUxxxLE PC7410M16MGxxxLE PCX755B BP123 sram 1mbyte 3.3v 16x16 bga Multi-Chip Package MEMORY TQFP 100 PACKAGE footprint with or without underfill

    M-8G

    Abstract: HMS25632M8G HMS25632Z8
    Text: HANBit HMS25632M8G/Z8 HAN SRAM MODULE 1Mbyte 256K x 32-Bit BIT Part No. HMS25632M8, HMS25632Z8 GENERAL DESCRIPTION The HMS25632M8G/Z8 is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of eight 256K x 4 SRAMs mounted on a 64-pin,


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    PDF HMS25632M8G/Z8 32-Bit) HMS25632M8, HMS25632Z8 HMS25632M8G/Z8 x32-bit 64-pin, 32bit M-8G HMS25632M8G HMS25632Z8

    Untitled

    Abstract: No abstract text available
    Text: SM344Q4AO85UUUU August 1997 Rev 1 SMART Modular Technologies SM344Q4AO85UUUU 1MByte 256K x 44 CMOS SRAM Secondary Cache Module General Description Features The SM344Q4AO85UUUU is a high performance, (1 Mbyte) static RAM Secondary Cache module for use with R4000 processor. It is organized as 256K words by


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    PDF SM344Q4AO85UUUU SM344Q4AO85UUUU R4000 80-pin, 256Kx4 128Kx8

    Untitled

    Abstract: No abstract text available
    Text: SM532X43085XLSX February 1996 Rev 0 SMART Modular Technologies SM532X43085XLSX 1MByte 256K x 32 CMOS, EDO, DRAM Module (Low Profile) General Description Features The SM532X43085XLSX is a high performance, EDO (Extended Data Out) 1-megabyte dynamic RAM module


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    PDF SM532X43085XLSX 72-pin, 256Kx16, 50/60/70ns 88WET

    OAK TECHNOLOGY

    Abstract: oti-067 OTI067 OTI-077 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64
    Text: OAK T E C H N O L O G Y INC SSE P • bV E ^ M O S 0 0 0 0 1 7 5 <333 H 0 A K T —T - £ 2 .- 3 3 - if 5 " Oak Technology Inc August 1991 O T T -0 7 7 Extended High Resolution VGA Graphics Controller with 1MByte Video Memory Support DESCRIPTION The OTI-077 is a highly integrated, single chip Extended High Resolution VGA Graphics Controller compatible with


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    PDF b72T405 00D017S OTT-077 OTI-077 OTI-067. OTT-077 OTI-067, 1024x768 1280x1024 OAK TECHNOLOGY oti-067 OTI067 oak technology oti 067 cga to vga Hercules Graphics Card oak oti-067 128x48 96x64

    Untitled

    Abstract: No abstract text available
    Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s


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    PDF EDI8F64128C 128KX64 EDI8F64128C 128Kx8 EDI8F64128C15MDC EDI8F64128C20MDC EDI8F64128C25MDC 01581USA EDBF864128C

    SMART Modular Technologies

    Abstract: SM732C256PL-12 SM732C256PL-15
    Text: ja SM732C256PL 1MByte 256K x 32 FLASH Module General Description Features The SM732C256PL is a high performance, 1Mbyte FLASH memory module organized as 256K words by 32 bits, in a 80-pin SIMM (single-in-line memory module) package. • High Density : 1Mbyte


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    PDF SM732C256PL SM732C256PL 256Kx 80-pin 120/150ns SMART Modular Technologies SM732C256PL-12 SM732C256PL-15

    zd 501

    Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
    Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


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    PDF EDI8F64128C 128Kx64 66MHz CELP2X80CS3Z48 EDI8F64128C EDI8F64128C20MDC EDI8F64128C25MDC 01581USA 3S3D114 zd 501 D044 z DD54 TME 57 Z3A18 55ZJ

    SM5810SI

    Abstract: No abstract text available
    Text: JUl ï B ’993 SM5810SI 1MByte IM x 8 Separate I/O CMOS DRAM Module General Description Features T h e S M 5810SI is a high perform ance, 1-m egabyte d ynam ic R A M m odule organized as 1M w ords by 8 bits (separate inputs and outputs), in a 30-pin, leadless,


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    PDF SM5810SI 5810SI 30-pin, 60/70/80ns 60/70/80ns) W7777Â H7////7777///

    Untitled

    Abstract: No abstract text available
    Text: JW. i 6 1993 SM581000A 1MByte 1M x 8 CMOS DRAM Module General Description The SM 581000A is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 8 bits, in a 30-pin, leadless, single-in-line memory module (SIM M ) package. The module utilizes two CMOS 1M x 4 dynamic RAMs


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    PDF SM581000A 81000A 30-pin, 60/70/80ns 60/70/80ns)

    Untitled

    Abstract: No abstract text available
    Text: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium


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    PDF EDI8F64128C 128Kx64 I8F64128C 128Kx8 EDI8F64128C15MMC EDI8F64128C20MMC EDI8F64128C25MMC 323D114 DDQ17Ã

    Untitled

    Abstract: No abstract text available
    Text: a WPSF256K32-27PJX M/HITE /MICROELECTRONICS 1MByte of SRAM & 1MByte of FLASH 256Kx32 SRAM/256Kx32 FLASH MODULE ADVANCED* FEATURES • 100,000 Erase/Program Cycles ■ Access Tim es of 25ns SRAM ■ Flexible Sector Architecture • One 8K word, tw o 4K word, one 16K word, and seven 32K


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    PDF WPSF256K32-27PJX 256Kx32 SRAM/256Kx32

    Untitled

    Abstract: No abstract text available
    Text: ' • ; ’’ >» CMÍ1TIT jflHjll S M 536256 A ugust 1991 Rev 1 HodularTedmoloqies SM536256 1MByte 256KX 36 CMOS DRAM Module General Description Features • High Density : 1Mbyte ■ Fast Access Time of 70/80/100ns (max.) ■ Low Power : 4.95/4.12/3.41W (max.) - Active (70/80/100ns)


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    PDF SM536256 256KX 72-pin, 22/xf 70/80/100ns

    Untitled

    Abstract: No abstract text available
    Text: H B 5 2 6 R 4 6 4 D B K - 1 0 /1 2 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte x 64 x 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a


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    PDF 576-word 64-bit ADE-203-674 HB526R464DBK 16-Mbit HM5216805TB) 24C02) 144-pin

    Untitled

    Abstract: No abstract text available
    Text: ML IS »93 SM481000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 481000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP package. • • The module utilizes two CMOS 1M x 4 dynamic RAMs


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    PDF SM481000ALP 481000ALP 30-pin, 60/70/80ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS WINDOW RAM KM4232W259 D E S C R IP T IO N F E A T U R E S • 1MByte Frame-Buffer on a single chip The KM4232W 259 is a 1MByte Dual Ported DRAM • 1.6 G-Bytes/Second Internal Bus: with added features that accelerate graphic operations in a


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    PDF KM4232W259 KM4232W 256-bit 7U4143 71b4142 464C2

    Untitled

    Abstract: No abstract text available
    Text: HB526R464DBK-10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte X 64 X 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a


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    PDF HB526R464DBK-10/12 576-word 64-bit ADE-203-674 HB526R464DBK 16-Mbit HM5216805TB) 24C02) 144-pin