AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
CY62167EV30LL
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PDF
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CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-ball
48-pin
CY62167EV30LL-45ZXI
AN1064
CY62167EV30LL
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PDF
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Untitled
Abstract: No abstract text available
Text: DS2227 Flexible NV SRAM Stik www.dalsemi.com PIN ASSIGNMENT FEATURES 1 1M SRAM 1M SRAM 1M SRAM Flexibly organized as 128k x 32, 256k x 16, or 512k x 8 bits Data retention >10 years in the absence of VCC Nonvolatile circuitry transparent to and independent from host system
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DS2227
72-position
72-Pin
DS2227
72-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or
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CY62167EV18
48-ball
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PDF
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100L
Abstract: A67L0636 A67L0636E A67L1618E
Text: A67L1618/A67L0636 Series 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Preliminary Document Title 2M X 16, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue July 26, 2004 Preliminary 0.1 Add 100L Pb-free LQFP package type
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A67L1618/A67L0636
250/227/200/166/150/133MHz)
100L
A67L0636
A67L0636E
A67L1618E
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PDF
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100L
Abstract: A67L0636 A67L0636E A67L1618E
Text: A67L1618/A67L0636 Series 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Document Title 2M X 16, 1M X 36 LVTTL, Pipelined ZeBLTM SRAM Revision History History Issue Date Remark 0.0 Initial issue July 26, 2004 Preliminary 0.1 Add 100L Pb-free LQFP package type
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A67L1618/A67L0636
100L
A67L0636
A67L0636E
A67L1618E
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PDF
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TAHC
Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY
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A64S0616
A64S0616
TAHC
A64S0616G-70
A64S0616G-85
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PDF
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A64S0616
Abstract: A64S0616G-55 A64S0616G-70
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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A64S0616
MO192
A64S0616
A64S0616G-55
A64S0616G-70
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PDF
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A64S0616
Abstract: A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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Original
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A64S0616
MO192
A64S0616
A64S0616G-70
A64S0616G-85
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PDF
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dd033
Abstract: No abstract text available
Text: 32 Megabit CMOS SRAM DP3S1MX32PY5 ADVANCED INFORMATION PIN-OUT DIAGRAM DESCRIPTION: The DP3S1MX32PY5 is a 1M x 32 SRAM module that utilizes the new and innovative space saving TSOP stacking technology. The module is constructed of two 1M x 16 SRAM’s that are
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DP3S1MX32PY5
DP3S1MX32PY5
80-Pin
I/O12
I/O13
I/O14
I/O15
500mV
30A244-00
dd033
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PDF
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Untitled
Abstract: No abstract text available
Text: IC71V16F64IP16 Document Title Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1M x 16-Bit) Pseudo SRAM Revision History Revision No. 0A History
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IC71V16F64IP16
16-Bit)
MCP006-0A
73-ball
IC71V16F64IP16-85B73
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PDF
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012MAX
Abstract: A15F4
Text: EtronTech EM566169BC 1M x 16 Pseudo SRAM Rev 0.6 Apr. 2004 Features Pad Assignment • Organized as 1M words by 16 bits • Fast Cycle Time : 60/65/70/85ns • Fast Page Cycle Time : 18/20/25/30ns • Page Read Operation by 8 words • Standby Current ISB1 : 100uA
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EM566169BC
60/65/70/85ns
18/20/25/30ns
100uA
48-ball
EM566169BC-60/65/70/85
12MAX
012MAX
A15F4
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PDF
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Untitled
Abstract: No abstract text available
Text: EN71NS032A0 EN71NS032A0 Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS032A0
16-bit)
108MHz)
EN71NS032A0
individ20
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PDF
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A81L801
Abstract: 69LD
Text: A81L801 Stacked Multi-chip Package MCP 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Preliminary Document Title Stacked Multi-chip Package (MCP) 1M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
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A81L801
69-Ball
MO-219
A81L801
69LD
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PDF
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EN71PL032A0
Abstract: EN71PL032 EN29PL032 PSRAM EN71PL
Text: EN71PL032A0 EN71PL032 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71PL032A0
EN71PL032
16-bit)
EN71PL
EN29PL032
EN29PL064/032
EM566168GD
EN71PL032A0
EN29PL032
PSRAM
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PDF
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CQFP 240 Aeroflex
Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
MIL-STD-883
SCD1660
CQFP 240 Aeroflex
5962-9461110
military mcm 1553
5962-9461108
5962-9461109
5962-9461108hxc
O28 Package
5962-9461109HM
5962-9461110HMC
a1855
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PDF
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smd code F18
Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
SCD1660
smd code F18
act-s512k32n
5962-9461110HTC
ACT-S512K32N-017P7Q
5962-9461110
CQFP 80
footprint cqfp 280
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PDF
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Untitled
Abstract: No abstract text available
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-STD-883
MIL-STD-883
SCD1660
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PDF
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F0110
Abstract: 004C2000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •
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MB82D01161-85/-85L/-90/90L
576-WORD
MB82D01161
16-bit
16bit
90nany
F0110
F0110
004C2000
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PDF
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TLA064
Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
TLA064
S71PL129JC0
S29PL129J
S71PL129JA0
S71PL129JB0
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PDF
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S29PL129J
Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
S71PL129JA0
S71PL129JB0
S71PL129JC0
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PDF
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military multichip
Abstract: No abstract text available
Text: i — i— r 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL & CMOS Compatible Design Fast 17,20,25,35,45,55ns Access Times
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OCR Scan
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MIL-PRF-38534
68-Lead,
IL-STD-883
MIL-STD-883
SCD1660
military multichip
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PDF
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CY62157EV30
Abstract: CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
CY62157EV30LL
AN1064
CY62157DV30
CY62157
220V DC TEMPERATURE CONTROL
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PDF
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CY62157EV30 MoBL
Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
CY62157EV30 MoBL
CY62157EV30LL-45ZSXI
CY62157
AN1064
CY62157DV30
CY62157EV30LL
DSA0025657
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PDF
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