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    1G NAND FLASH Search Results

    1G NAND FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    1G NAND FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.4, FEB. 27, 2014 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA

    SLC NAND

    Abstract: MX30LF1G08AM MX30LF1G MX30LF1G08A MX30LF1G08AA MX30LF1G08AA-TI MX30LF 63-vfbga
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 0.06, FEB. 08, 2012 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA SLC NAND MX30LF1G08AM MX30LF1G MX30LF1G08A MX30LF1G08AA-TI MX30LF 63-vfbga

    MX30LF1G08AA

    Abstract: MX30LF1G MX30LF1G08AA-TI MX30LF1G08AM MX30LF1G08 MX30LF1G08A MX30LF1G08AA-XKI MXIC MX 63-vfbga mxic xtrarom
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.1, AUG. 13, 2012 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA MX30LF1G MX30LF1G08AA-TI MX30LF1G08AM MX30LF1G08 MX30LF1G08A MX30LF1G08AA-XKI MXIC MX 63-vfbga mxic xtrarom

    Untitled

    Abstract: No abstract text available
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.3, DEC. 18, 2013 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA

    SAMSUNG MCP

    Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
    Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1


    Original     		PDF K5D1G58KCM-D090 128Mx8) 2Mx32x4Banks) 256Mb 119-Ball SAMSUNG MCP 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp

    TC58DVG02D5TA00

    Abstract: toshiba nand plane size
    Text: TC58DVG02D5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DVG02D5TA00 TC58DVG02D5 256bits) 1024blocks. 2112-byte 012-09-01A TC58DVG02D5TA00 toshiba nand plane size

    TC58DVG02D5

    Abstract: No abstract text available
    Text: TC58DVG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DVG02D5BAI6 TC58DVG02D5 256bits) 1024blocks. 2112-byte 012-08-01A

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NVG0S3HBAI6 TC58NVG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C

    TC58DYG02D5BAI4

    Abstract: TC58DVG02D5TA00
    Text: TC58DYG02D5BAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DYG02D5BAI4 TC58DYG02D5 256bits) 1024blocks. 2112-byte 012-09-01A TC58DYG02D5BAI4 TC58DVG02D5TA00

    P-VFBGA67-0608-0

    Abstract: toshiba NAND Technology Code
    Text: TC58DYG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DYG02D5BAI6 TC58DYG02D5 256bits) 1024blocks. 2112-byte 012-08-01A P-VFBGA67-0608-0 toshiba NAND Technology Code

    TC58DV

    Abstract: No abstract text available
    Text: TC58DVG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DVG02D5BAI6 TC58DVG02D5 256bits) 1024blocks. 2112-byte 012-08-01A TC58DV

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NYG0S3HBAI6 TC58NYG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C

    TC58DYG02D5BAI6

    Abstract: P-VFBGA67-0608-0 TC58DYG02D5BAI4 toshiba NAND Technology Code
    Text: TC58DYG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DYG02D5BAI6 TC58DYG02D5 256bits) 1024blocks. 2112-byte 012-08-01A TC58DYG02D5BAI6 P-VFBGA67-0608-0 TC58DYG02D5BAI4 toshiba NAND Technology Code

    toshiba nand plane number

    Abstract: No abstract text available
    Text: TC58DVG02D5BAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58DVG02D5BAI4 TC58DVG02D5 256bits) 1024blocks. 2112-byte 012-09-01A toshiba nand plane number

    TH58NVG3S0HTA00

    Abstract: No abstract text available
    Text: TH58NVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG3S0HTA00 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58NVG3S0HTA00 TH58NVG3S0HTA00 4096blocks. 4352-byte 2013-09-20C

    TC58NVG0S3HTAI0

    Abstract: No abstract text available
    Text: TC58NVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HTAI0 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NVG0S3HTAI0 TC58NVG0S3HTAI0 688bits) 1024blocks. 2176-byte 2012-08-31C

    tc58nvg0s3hta00

    Abstract: No abstract text available
    Text: TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NVG0S3HTA00 TC58NVG0S3HTA00 688bits) 1024blocks. 2176-byte 2012-08-31C

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NYG0S3HBAI4 TC58NYG0S3HBAI4 688bits) 1024blocks. 2176-byte 2012-10-01C

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG3S0F is a single 1.8V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG3S0FBAID TC58NYG3S0F 4096blocks. 4328-byte 2013-09-10C

    Untitled

    Abstract: No abstract text available
    Text: TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BVG3S0HBAI4 TH58BVG3S0HBAI4 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    TC58NVG3S0FTA00

    Abstract: No abstract text available
    Text: TC58NVG3S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NVG3S0FTA00 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA00

    Untitled

    Abstract: No abstract text available
    Text: TH58BYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI6 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BYG3S0HBAI6 TH58BYG3S0HBAI6 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    Untitled

    Abstract: No abstract text available
    Text: TH58BVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HTAI0 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		PDF TH58BVG3S0HTAI0 TH58BVG3S0HTAI0 4096blocks. 4224-byte 4224-bytes 2013-09-20C

    tc58NVG0s3Hbai4

    Abstract: K/64Gb Nand flash toshiba
    Text: TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NVG0S3HBAI4 TC58NVG0S3HBAI4 688bits) 1024blocks. 2176-byte 2012-10-01C K/64Gb Nand flash toshiba