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    TC58NVG3S0F Price and Stock

    KIOXIA TC58NVG3S0FTA00

    IC FLASH 8GBIT PARALLEL 48TSOP I
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    DigiKey TC58NVG3S0FTA00 Tray
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    Avnet Americas TC58NVG3S0FTA00 Tray 14 Weeks 96
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    KIOXIA TC58NVG3S0FTAI0

    SLC NAND Flash 3.3V 8Gbit 1G x 8bit 48-Pin TSOP-I - Trays (Alt: TC58NVG3S0FTAI0)
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    Avnet Americas TC58NVG3S0FTAI0 Tray 14 Weeks 96
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    KIOXIA TC58NVG3S0FBAID

    SLC NAND Flash Serial 3.3V 8Gbit 1G X 8bit 25ns 63-Pin TFBGA Tray - Trays (Alt: TC58NVG3S0FBAID)
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    Avnet Americas TC58NVG3S0FBAID Tray 14 Weeks 168
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    KIOXIA TC58NVG3S0FTAI0B4U

    TMATC58NVG3S0FTAI0B4U 8G SLC (Alt: TC58NVG3S0FTAI0B4U)
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    Avnet Asia TC58NVG3S0FTAI0B4U 16 Weeks 1,000
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    TC58NVG3S0F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC58NVG3S0FTA00 Toshiba Memory, Integrated Circuits (ICs), IC FLASH 8GBIT 25NS 48TSOP Original PDF

    TC58NVG3S0F Datasheets Context Search

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    TC58NVG3S0FTA

    Abstract: No abstract text available
    Text: TC58NVG3S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NVG3S0FTAI0 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0FBAID is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  232) bytes  64 pages  4096blocks.


    Original     		PDF TC58NVG3S0FBAID TC58NVG3S0FBAID 4096blocks. 4328-byte 2012-01-16C

    TC58NVG3S0FTA00

    Abstract: No abstract text available
    Text: TC58NVG3S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NVG3S0FTA00 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA00

    THGBM4G4D1HBAIR

    Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number


    Original     		PDF SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR

    toshiba TH58NVG*D

    Abstract: No abstract text available
    Text: NAND Flash Memory SLC Large Capacity Product list of NAND Flash Memory SLC Large Capacity Block Size: 256K Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number


    Original     		PDF TC58NVG3S0FBAID 48-P-1220- TC58NVG3S0FTA00 TC58NVG3S0FTAI0 P-TFBGA63-1011- TC58NYG3S0FBAID TH58NVG4S0FTA20 TH58NVG4S0FTAK0 toshiba TH58NVG*D