SAMSUNG MCP
Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1
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K5D1G58KCM-D090
128Mx8)
2Mx32x4Banks)
256Mb
119-Ball
SAMSUNG MCP
7a7l
MCP MEMORY
K5D1G58KCM-D090
nand sdram mcp
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Micron 512MB nand FLASH
Abstract: 64gb NAND chip micron nand flash chip 8gb Micron 1GB NAND FLASH nand flash 32gb x16 1g nand DDR mcp MCP NAND DDR MICRON mcp micron nand flash chip 16gb MT29C
Text: MCP/PoP Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Multichip Packages MT 29C 1G 12M A B A A Micron Technology IT ES Production Status AG = 16Gb BG = 32Gb CG = 64Gb DG = 128Gb LPDRAM Density 56M = 256Mb 24M = 1Gb
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128Gb
256Mb
512Mb
152Mb
640Mb
128Mb
Micron 512MB nand FLASH
64gb NAND chip
micron nand flash chip 8gb
Micron 1GB NAND FLASH
nand flash 32gb x16
1g nand DDR mcp
MCP NAND DDR
MICRON mcp
micron nand flash chip 16gb
MT29C
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Multicomp MCPAS6B2M1CE2
Abstract: switches push button
Text: Switches Push Button Specifications: Maximum current/voltage rating with resistive load : 400mA 32V ac, 100mA 50V dc and 125mA 125V ac. Maximum initial contact resistance : 50mΩ. Minimum insulation resistance : 1GΩ at 500V dc. Dielectric strength : 1000V ac rms.
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400mA
100mA
125mA
Multicomp MCPAS6B2M1CE2
switches push button
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movinand
Abstract: movinand DECODER 1g nand mcp movi nand S3C49VCX03 16G nand flash S3C49v 8G nand 16G nand MCP NAND
Text: MOVI NAND Code Information 1/3 Last Updated : November 2008 KMXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 1. Memory (K) 9 10 11 12 13 14 15 16 17 18 4. MoviNAND Density & Vcc & Org. & BB Co de 2. MOVI NAND/MCP : M moviNAN D Den NAND Den Ce ll 3. Small Classification
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SK6626
Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
Text: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP
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MCP8540
Abstract: No abstract text available
Text: Integrated Communications Processors MPC8540 PowerQUICC III Processor Addressing the need for higher compute MCP8540 BLOCK DIAGRAM density and lower system cost, the Freescale MPC8540 PowerQUICC™ III integrated communications processor, built on Power
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MPC8540
MCP8540
MPC8540
32-bit
32-bit,
783-pin
MPC8540FACT
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512M 29
Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking
Text: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)
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16Bank
16Bank
512M 29
1g mcp
OneNAND mcp
"NOR Flash"
16-BANK
UtRAM Density
sram 128m
mrs marking
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DDR RAM 512M
Abstract: DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic
Text: System in a Package System in a Package SiP SiP is a functional system or sub-system assembled into a single package. Typically it will contain two or more dissimilar die. For example: The combination of a processor, gate array, ASIC, RAM and flash memories.
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DMD1001
DDR RAM 512M
DDR2 pcb design
DMD1001
hyperlynx
DDR2 layout
PRF-38534
ddr2 ram pcb layout
electronic schematic
ddr2 ram chip
DDR2 schematic
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3906A 1SV246 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=typ 5Ω, MCP Features • • • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits
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EN3906A
1SV246
1SV246-applied
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MCP1206FTE800
Abstract: MCP1206FTE900 MCP0805FTE601
Text: MULTILAYER FERRITE MCP POWER BEADS SPEER ELECTRONICS, INC. MULTI LAYER FERRITE POWER BEADS • Designed to reduce noise at frequencies • Standard EIA Packages: 0603, 0805, 1206 • Nickel Barrier with solder overcoat for excellent soderability • Magnetically Shielded
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NANDA9R3N
Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or
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2x512-,
256/512-Mbit
x16/x32)
TFBGA107
TFBGA137
LFBGA137
TFBGA149
VFBGA160
VFBGA152
TFBGA152
NANDA9R3N
NANDA9R
TFBGA128
NANDA9R4N4
NANDA9R3N1
nanda8r3
M65KG512AM
d2ed
M65KD001AM
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PowerPC 60X Bus Interface controller
Abstract: EDO FLASH DIMMs 72 pin map 3222 82660 EDO FLASH DIMMs tagram TEA 2111 IBM27-82660 52 signals PowerPC 601 IBM powerpc
Text: PowerPC 60x Memory Controller and PCI Bridge IBM27-82660 Description Highlights General • Extensive programmability • Flexible and programmable error handling • Dual split bus structure CPU-PCI • Chipset options configured in register set • Two low-cost plastic quad flat packs
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IBM27-82660
66MHz
33MHz,
07GK306400*
GK10-3096-00
PowerPC 60X Bus Interface controller
EDO FLASH DIMMs 72 pin
map 3222
82660
EDO FLASH DIMMs
tagram
TEA 2111
52 signals PowerPC 601
IBM powerpc
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MT29F1G08ABCHC
Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:
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152-Ball
MT29C
152-Ball
09005aef8326e5ac
09005aef8326e59a
152ball_
MT29F1G08ABCHC
MT29F4G16A
mt29f1g08
MT29F1G08ABCHC-ET
MT29C1G12
MT29F2G16ABDHC
MT29F4G16AB
MT29F1G16ABCHC-ET
micron lpddr
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DSA003179
Abstract: MCP1206P AHA12
Text: KOA SPEER ELECTRONICS, INC. SS-220 R6 AHA 12/19/01 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206 ■ Nickel barrier with solder overcoat for excellent solderability
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SS-220
DSA003179
MCP1206P
AHA12
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-220 R5 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206 ■ Nickel barrier with solder overcoat for excellent solderability
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SS-220
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0909NS
Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA
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16K/16ms
4K/32ms
8K/64ms
16K/32ms
8K/32ms
2K/16ms
4K/64ms
429ns
667ns
0909NS
GDDR5
10x10mm, LGA, 44 pin
170-FBGA
60-LGA
MARKING CL4
FBGA DDR3 x32
170FBGA
60-FBGA
PC133 133Mhz cl3
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36-05-019
Abstract: renault Renault 36-05-019 porte-clips connector NF C 93-400 3605019 PBT 20 GF Tyco 36-05-019 5.5.3.2 Tyco porte-clips 2.8 mcp NF R 13-460
Text: Spécification produit PORTE-LANGUETTES ETANCHE A 5 VOIES POUR CONTACTS 2,8 x 0,8 5 POS SEALED TAB HOUSING CONTACT 2.8 x 0.8 108-15221 24 JAN 05 Rév. D EC ER00-0011-05 1. BUT 1. BUT Cette spécification définit les caractéristiques générales ainsi que les performances électriques et mécaniques du porte-languettes étanche 5 voies équipés de
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ER00-0011-05
36-05-019
renault
Renault 36-05-019
porte-clips connector
NF C 93-400
3605019
PBT 20 GF Tyco
36-05-019 5.5.3.2
Tyco porte-clips 2.8 mcp
NF R 13-460
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tyco mcp 2.8 receptacle
Abstract: PBT 20 GF Tyco tyco mcp 2.8 housing NF C 93-400 porte-clips connector schema electronic 3g Tyco porte-clips 2.8 mcp axe 10 NF C 93-400 5a 5 PIN MALE connector
Text: Spécification produit PORTE-LANGUETTES ETANCHE A 5 VOIES POUR CONTACTS 2,8 x 0,8 5 POS SEALED TAB HOUSING CONTACT 2.8 x 0.8 108-15352 04 MAR 05 Rév. O 1. BUT 1. BUT Cette spécification définit les caractéristiques générales ainsi que les performances électriques et mécaniques du porte-languettes étanche 5 voies équipés de
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MCP1812FTE700P
Abstract: MCP1206FTE900 MCP0805FTE601 1806 TAPE SS-220
Text: SS-220 R4 single 3/22/0 3:43 PM Page 1 SS-220 R4 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206, 1806, 1812 ■ Nickel barrier with solder overcoat for excellent solderability
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SS-220
MCP1812FTE700P
MCP1206FTE900
MCP0805FTE601
1806 TAPE
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BDS Thread
Abstract: SMB600 3300A SMB-600 MSC8122 MSC8144 MSC8144ADS MSC8144E MSC8144EC utfb
Text: Freescale Semiconductor Application Note Document Number: AN3439 Rev. 0, 09/2007 MSC8144 Ethernet Performance Maximizing QUICC Engine Throughput by Andrew Temple NCSG DSP Applications Freescale Semiconductor, Inc. Austin, TX This application note explains how to configure and run
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AN3439
MSC8144
MSC8144ADS)
BDS Thread
SMB600
3300A
SMB-600
MSC8122
MSC8144ADS
MSC8144E
MSC8144EC
utfb
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Untitled
Abstract: No abstract text available
Text: THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC R E V ISIONS DIST RESERVED. LTR P A R T N U M B E R C H A N G E S A ND OR D E S I G N C H A N G E S A F F E C T I N G ITEM
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OCR Scan
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04NOV
UL94V-0
JAN2009
JAN2009
3IMAR2000
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2sk77
Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications
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250mm
2SK212,
2SK315,
2SK544,
2SK669,
2SK1841
2SK2270.
2SK304,
2SK404,
2SK427,
2sk77
2SK772
2SK444
2sk20
2SK1332
2SK968
2sk332
2sk427
2SK36
2sk377 j
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