pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
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S29WS128R
Abstract: sa512 S29WS512R wireless design guide 13th S29WS WS512R
Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)
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S29WS-R
S29WS512R,
S29WS256R,
S29WS128R
32/16/8M
S29WS128R
sa512
S29WS512R
wireless design guide 13th
S29WS
WS512R
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RC28F256P33BF
Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KBcument;
RC28F256P33BF
JS28F256P33
PC28F256P33
pc28F256P33T
RC28F256P33TF
JS28F256P33BF
PC28F256P33TF
pc28f256p33b
PC28F256P33BF
PC48F4400P0TB0E
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ws512P
Abstract: D1191 SA517 S29WS-P SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P
Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS-P
S29WS512P,
S29WS256P,
S29WS128P
S29WS-P
ws512P
D1191
SA517
SA516
d1271
s29ws
S29WS128P
S29WS256P
S29WS512P
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js28f256p
Abstract: RC48F4400P0TB0EJ
Text: 256Mb and 512Mb 256Mb/256Mb , P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE
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256Mb
512Mb
256Mb/256Mb)
P33-65nm
P33-65nm)
RC28F256P33TFE,
RC28F256P33BFE,
RC28F256P33BFF,
PC28F256P33TFE,
PC28F256P33BFE,
js28f256p
RC48F4400P0TB0EJ
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Untitled
Abstract: No abstract text available
Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,
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512Mb,
P33-65nm
P33-65nm)
JS28F512P33BFD,
JS28F512P33TFA,
JS28F512P33EFA
PC28F512P33BFD,
PC28F512P33TFA,
PC28F512P33EFA
JS28F00AP33BFA,
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pc28f00ap30
Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F512P30
PC28F00AP30TF
pc28f00ap
PC28F512P30BF
PC28F00BP30EF
pc28f00ap30ef
PC28F00AP30BF
JS28F512P30BF
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TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
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MICRON mcp
Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,
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256Mb
512Mb
256Mb/256Mb)
P30-65nm
P30-65nm)
JS28F256P30B/TFx,
RC28F256P30B/TFx,
PC28F256P30B/TFx,
RD48F4400P0VBQEx,
RC48F4400P0VB0Ex,
MICRON mcp
PC28F256P30B
PC28F256P
PC28F256P30BFF
PF48F4400P0VBQEF
PC28F256P30BFE
JS28F256P30BF
Micron 512MB NOR FLASH
PF48F
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BA339
Abstract: K8C1215ET BA507
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
K8C1215ET
BA507
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BA339
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
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pc28f00ap30
Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F00AP30TF
PC28F00AP30EF
PC28F512P30
JS28F512
PC28F512P30TF
JS28F512P30BF
pc28f00ap30bf
PC28F00BP30
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JS28F256P33
Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Text: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
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P3365nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
JS28F256P33
PC28F256P33
PC28F256P33BF
RC28F256P33
RC28F256P33BF
JS28F256P33BF
JS28F256P33TF
PC48F4400P0TB0E
PC28F256P33B
PC28F256P33TF
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Untitled
Abstract: No abstract text available
Text: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,
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512Mb,
P30-65nm
P30-65nm)
JS28F512P30BFx,
JS28F512P30EFx,
JS28F512P30TFx,
PC28F512P30BFx,
PC28F512P30EFx,
PC28F512P30TFx
JS28F00AP30BFx,
|
|
|
Untitled
Abstract: No abstract text available
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
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P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-KByte
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JS28F512P33BF
Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
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PDF
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P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-ing
JS28F512P33BF
JS28F512
pc28f00ap33
PC28F00AP33BF
truth table NOT gate 74
JS28F512P33TF
PC28F00AP33TF
JS28F512P33EF
PC28F00BP33EF
JS28F00AP33BF
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BA379
Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S1215ETC
K8S1215EBC
K8S1215EZC
512Mb
64FBGA,
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
0110000h-011FFFFh
BA379
BA506
BA438
BA508
BA306
ba473
BA431
BA356
BA471
ba258
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BA339
Abstract: ba406 K8F1315ETM
Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F12
512Mb
inh-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
BA339
ba406
K8F1315ETM
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AOS PACKING
Abstract: No abstract text available
Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit® Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)
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S29WS-R
S29WS512R,
S29WS256R,
S29WS128R
32/16/8M
AOS PACKING
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Untitled
Abstract: No abstract text available
Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,
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512Mb,
P33-65nm
P33-65nm)
JS28F512P33BFD,
JS28F512P33TFA,
JS28F512P33EFA
PC28F512P33BFD,
PC28F512P33TFA,
PC28F512P33EFA
JS28F00AP33BFA,
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transistor sa210
Abstract: SA516
Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS-P
S29WS512P,
S29WS256P,
S29WS128P
S29WS-P
transistor sa210
SA516
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PC28F256P30BF
Abstract: PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE
Text: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP
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P30-65nm)
256-Mbit,
512-Mbit
256M/256M)
16-word
512-word
512-word
130nm;
P30-65nm
130nm.
PC28F256P30BF
PC48F4400P0VB0E
PC28F256P30TF
JS28F256P30BF
RC28F256P30BF
RC28F256P30TF
PF48F4000P0ZBQE
JS28F256P30TF
RC48F4400P0VB0E
PF48F4400P0VBQE
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PC28F00AP
Abstract: No abstract text available
Text: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode
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PDF
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P33-65nm)
512-Mbit,
105ns
16-word
52MHz
512-word
46MByte/s
128-KByte
P33-65nm
PC28F00AP
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Untitled
Abstract: No abstract text available
Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS-P
S29WS512P,
S29WS256P,
S29WS128P
S29WS-P
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