NS4890

Abstract: NSA 2000 inverter 7490DC XC74UL32AAN
Contextual Info: XC74UH00AAM CMOS Logic ♦ CM OS 2-Input NAND Gate • Applications ♦ High Speed Operation tpd=7ns TYP ▲ ~ xw .x n ♦ Operating Voltage Range 2V~6V • • ♦ Palmt0Ps Digital Equipment Low Power Consum ption 1/iA MAX ■ General Description ■ Features

Contextual Info: Silicon-Based Technology Corp. SBT103AT Series Small-Signal Schottky Barrier Diodes SBT103AT series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: Silicon-Based Technology Corp. SBT103AT Series Small-Signal Schottky Barrier Diodes SBT103AT series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

SBT103AT

Contextual Info: Silicon-Based Technology Corp. SBT103AT Series Small-Signal Schottky Barrier Diodes SBT103AT series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 250mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

M3481

Abstract: TSM3481CX6
Contextual Info: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )

TSM3460CX6

Abstract: 4300 MOSFET s54 mo TSM3460
Contextual Info: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V

SOT-26 ci

Abstract: TSM3441CX6 607ts
Contextual Info: E TAIWAN TSM3441 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY P in D e f in it io n : V os (V ) 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source •20 1 23 Features R Ds(on)(mQ) b (A ) 90 @ Vos = -4.5V -3.3 110@ Vgs = -2.5V

MOSFET MARKING 3g

Abstract: 67A SOT 23 6 3G MOSFET M3424
Contextual Info: E TAIWAN TSM3424 S E M IC O N D U C T O R 30V N-Channei MOSFET pb RoHS CO M PLIANCE SO T-26 854 PR O D U C TS ÜMMARY P in D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V D S{V ) 30 1 23 Features R D S (o n ){ lT lÛ ) Id ( A ) 30 @ VGS= 10V

CEY 3-PIN

Abstract: mark cey transistor cey marking code sot-26 3.3v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LR3XXYYB CMOS IC 150mA 2CH LDO REGULATOR „ DESCRIPTION The UTC LR3XXYYB are CMOS voltage regulator ICs that have high output voltage accuracy, low dropout, low supply current, and high ripple rejection. Every voltage regulator IC of

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

MDT90P01ST2611

Abstract: MDT90P01 ALU 8 bit PB-01D
Contextual Info: MDT90P01 Sleep Mode for power saving 1. General Description oscillator start-up time : 20ms This EPROM-Based 4-bit micro-controller uses a fully 8 bit real time clock/counter RTCC with 8-bit static CMOS technology process to achieve higher programmable prescaler

RTCC

Abstract: toy motor Control IC MDT90P01ST2611 MDT90P01
Contextual Info: MDT90P01 Sleep Mode for power saving 1. General Description oscillator start-up time : 20ms This EPROM-Based 4-bit micro-controller uses a fully 8 bit real time clock/counter RTCC with 8-bit static CMOS technology process to achieve higher programmable prescaler

UAA2077AM

Abstract: if8 capacitor SSOP16 SSOP20 aa2077 infradyne integrated 10 MHz
Contextual Info: INTEGRATED CIRCUITS & S ln lE iT UAA2077AM Image rejecting front-end for D EC T applications Objective specification Supersedes data of November 1994 File under Integrated Circuits, IC03 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer

Contextual Info: Philips Semiconductors Product specification 7aabthoo 899 9-bit dual latch transceiver with 8-bit parity generator/checker 3-State FEATURES DESCRIPTION • Symmetrical (A and B bus functions are identical) The 74ABT899 is a 9-bit to 9-bit parity transceiver with separate

MDT90P01ST2612

Abstract: TTL ALU MDT90P01ST2611 MDT90P01 04H0000
Contextual Info: MDT90P01 1. 概述 省电睡眠模式 震荡器起始时间: 20ms 这个 4 位的 EPROM 微控制器是由完全静态的 CMOS 8 位实时时钟/计数器 RTCC 带 8 位可编程预 技术设计，集高速，体积小，低功耗和高抗干扰性一体

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50Y C6560
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

5V VSG MOSFET

Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

BA636

Abstract: RF 125khz receiver sa605 sa636 pin diagram 330C2 sa636 application vhf fm receiver 125kHz fsk receiver F2240
Contextual Info: Philips Semiconductors Product specification Low voltage high performance mixer FM IF system with high-speed RSSI DESCRIPTION SA636 PIN CONFIGURATION The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/osciilator, two

PowerMOS transistor TOPFET high side switch

Abstract: 100-P BUK200-50X
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

REGULATOR IC 7809

Abstract: IC 7809 regulator REGULATOR IC 7809 configurations SSOP28 TDA8763 TDA8763A LA 7809 IC 7809 regulator to 89 package
Contextual Info: Philips Semiconductors Preliminary specification 10-bit high-speed iow-power ADC with internal reference regulator TDA8763 APPLICATIONS FEATURES 10-bit resolution High-speed analog-to-digital conversion for: Sampling rate up to 50 MHz • Video data digitizing

irf 4095

Abstract: prescaler 64 SA7025 SA7025DK SR00602 T22N
Contextual Info: Product specification Philips Semiconductors 1GHz low-voltage Fractional-N synthesizer SA7025 PIN CONFIGURATION DESCRIPTION The SA7025 is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. Featuring Fractional-N division with selectable modulo 5 or 8

AV RF modulator

Abstract: PLL TV MODULATOR AM MODULATOR USING PLL S020 TDA8722 TDA8722M TDA8722T TPSG 17 HS 0007-03
Contextual Info: INTEGRATED CIRCUITS TDA8722 l2C-bus programmable modulator for negative video modulation and FM sound Objective specification File under Integrated Circuits, IC02 1995 Mar 21 i m Philips Semiconductor PH ILIPS tm 7110Ô2L 00Ô7ÔÔS ssa • This Material Copyrighted By Its Respective Manufacturer

capacitor 0.01 k 400 MKT philips

Abstract: GS 78L05 N
Contextual Info: DISCRETE SEMICONDUCTORS BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor