BUK455-600B
Abstract: LG 631
Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
711Gfl2b
0Db4101
BUK455-600B
PINNING-T0220AB
BUK455-600B
LG 631
|
Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
|
OCR Scan
|
PDF
|
BUK637-400B
BUK637-400B
|
BUK455-600B
Abstract: transistor buk455 Philips 34D
Text: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
0Db4101
BUK455-600B
-T0220AB
711Dfl2b
BUK455-600B
transistor buk455
Philips 34D
|
BU2530AW
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
|
OCR Scan
|
PDF
|
BU2530AW
1C01V
BU2530AW
|
Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
BUK438-800A/B
BUK438
-800A
-800B
|
BUK657-400B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
PDF
|
711035b
00b43Sl
BUK657-400B
-T0220AB
|
