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    BUK657-400B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 711035b 00b43Sl BUK657-400B -T0220AB

    TRANSISTOR 434

    Abstract: BUK856-450IX mj power transistor IEC134 T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)


    OCR Scan     		PDF 7110fiSt. BUK856-450IX T0220AB TRANSISTOR 434 mj power transistor IEC134