1ss368
Abstract: No abstract text available
Text: 1SS368 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
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1SS368
961001EAA2'
1ss368
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diode marking w8
Abstract: 1ss368 W8 Diode ultra fast 80V 100ma SOD323 SOD-323 marking W8 marking code w8
Text: 1SS368 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application PINNING Features • Small package • Low forward voltage: DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W8 VF=0.98V typ. • Fast reverse recovery time: Top View Marking Code: "W8" Simplified outline SOD-323 and symbol
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1SS368
OD-323
OD-323
diode marking w8
1ss368
W8 Diode
ultra fast 80V 100ma SOD323
SOD-323 marking W8
marking code w8
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diode marking w8
Abstract: diode w8 sod323 W8 Diode marking code w8 1ss368 SOD-323 marking W8 W8 marking
Text: 1SS368 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W8 Applications • Ultra High Speed Switching Absolute Maximum Ratings Ta = 25 OC
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1SS368
OD-323
OD-323
diode marking w8
diode w8 sod323
W8 Diode
marking code w8
1ss368
SOD-323 marking W8
W8 marking
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1SS368
Abstract: No abstract text available
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS368 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TYP.)
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1SS368
OD-523
77max
07max
1SS368
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1ss368
Abstract: No abstract text available
Text: 1SS368 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
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1SS368
1ss368
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diode marking w8
Abstract: diode w8 sod323 SOD-323 marking W8 1ss368 marking code w8 W8 Diode
Text: 1SS368 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W8 Applications • Ultra High Speed Switching Absolute Maximum Ratings Ta = 25 OC
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PDF
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1SS368
OD-323
OD-323
diode marking w8
diode w8 sod323
SOD-323 marking W8
1ss368
marking code w8
W8 Diode
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Untitled
Abstract: No abstract text available
Text: Product specification 1SS368 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :Vf 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TYP.) +0.05 0.1-0.02 0.07max
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1SS368
OD-523
77max
07max
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1ss368
Abstract: Fast reverse recovery W2
Text: 1SS368 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Applications • Ultra high speed switching Absolute Maximum Ratings Ta = 25 OC
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1SS368
OD-323
150-Tech
OD-323
1ss368
Fast reverse recovery W2
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
YTF842
2SK2387
YTF441
2SK2149
YTF613
2SK2381
YTF843
YTF442
mg75n2ys40
2N3055 TOSHIBA
mg150n2ys40
TLR103
TOSHIBA 2N3055
MG15N6ES42
2SK150A
TOSHIBA MG150N2YS40
2sk270a
S2530A
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Untitled
Abstract: No abstract text available
Text: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)
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1SS368
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1SS368
Abstract: No abstract text available
Text: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage
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1SS368
961001EAA2'
1SS368
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Untitled
Abstract: No abstract text available
Text: 1SS368 TOSHIBA 1 s S 3 68 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance VF 3 = 0.98V (TYP.) trr = 1.6ns (TYP.) CT = 0.5pF (TYP.)
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1SS368
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S3 DIODE schottky
Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching
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1SS300
1SS301
1SS302
1SS322
1SS357
1SS367
1SS370
1SS372
1SS378
HN1D01FU
S3 DIODE schottky
S4 DIODE schottky
2SA1015
MARK MQ
1S1585
common anode schottky diode
DIODE MARK B
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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