1N5821
Abstract: DB-113
Text: 1N5821 THRU 1N5822 3.0AMP. Schottky Barrier Rectifier VOLTAGE:30 TO 40V CURRENT:3.0A AXIAL LEAD DO-201AD Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight:1.2Gram Approximately 1N582X KEL High current capability,Low Forward Voltage Drop
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1N5821
1N5822
DO-201AD
1N582X:
1N5821~
1N5822
DB-111
1N5821
DB-113
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1N5820
Abstract: 1N5821 1N5822 diode do-201
Text: Spec. No. : C330LA Issued Date : 2003.04.16 Revised Date : Page No. : 1/3 CYStech Electronics Corp. 3.0Amp. Axial Leaded Schottky Barrier Diodes 1N582XLA Series Features • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
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C330LA
1N582XLA
DO-201AD
MIL-STD-202
MIL-STD-202,
UL94V-0
1N582XLA
1N5820
1N5821
1N5822
diode do-201
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Part Marking STMicroelectronics
Abstract: ST Low Forward Voltage Schottky Diode DIODE 1N5822 1N5821 1N5822 data sheet forward converter LOW DROP POWER SCHOTTKY RECTIFIER 1N5820 1N5822
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD
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1N582x
DO-201AD
DO-201AD
1N5820
1N5821
1N5822
Part Marking STMicroelectronics
ST Low Forward Voltage Schottky Diode
DIODE 1N5822
1N5822 data sheet
forward converter
LOW DROP POWER SCHOTTKY RECTIFIER
1N5822
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1N5821
Abstract: 1N5820 1N5822
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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1N582x
DO-201AD
DO-201AD
1N5821
1N5820
1N5822
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1N5821
Abstract: 1N5820 1N5822 1N5822 st
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 3A VRRM 40 V Tj 150°C VF (max) 0.475 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD
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1N582x
DO-201AD
DO-201AD
1N5820
1N5821
1N5822
1N5822
1N5822 st
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
FULL WAVE RECTIFIER CIRCUITS
half bridge LLC inverter
"Power Diode"
10 Ampere Schottky bridge
rectifier diode assembly
THERMAL RUNAWAY IN RECTIFIER
DIODE T28
3 diodes 3 phase half-wave rectifier
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1N5821
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
Surfa5820
1N5821
1N5821
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1N5822 PACKAGE
Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5822 PACKAGE
1N5821
half wave rectifier LLC
1N5820G
1N5820RL
1N5820RLG
1N5821G
1N5821RL
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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Untitled
Abstract: No abstract text available
Text: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N5820
1N5822
2011/65/EU
2002/96/EC
DO-201AD
JESD22-B102
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 1N5820 - 1N5822 3.0AMPS. Schottky Barrier Rectifiers DO-201AD Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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1N5820
1N5822
DO-201AD
DO-201AD
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N5820
1N5822
2011/65/EU
2002/96/EC
DO-201AD
JESD22-B102
50mVp-p
D1307015
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DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
DIODE 1N5822
1N5820RL
1N5821
1N5821RL
1N5822RL
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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Untitled
Abstract: No abstract text available
Text: 1N5820 thru 1N5822 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N5820
1N5822
2011/65/EU
2002/96/EC
DO-201AD
JESD22-B102
D1307015
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1N5821-1
Abstract: No abstract text available
Text: 1N5820 - 1N5822 CREAT BY ART 3.0AMPS. Schottky Barrier Rectifiers DO-201AD Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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1N5820
1N5822
DO-201AD
DO-201AD
MIL-STD-202,
1N582x
1N5821-1
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DIODE 1N5822
Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
DIODE 1N5822
1N5821-T3
1N5820
1N5820-T3
1N5820-TB
1N5821
1N5821-TB
1N5822
RS-296-E
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Untitled
Abstract: No abstract text available
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: 1N5820 – 1N5822 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency
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1N5820
1N5822
DO-201AD,
MIL-STD-202,
DO-201AD
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1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
1N5822RL
1N5820RL
1N5821
1N5821RL
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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Untitled
Abstract: No abstract text available
Text: 1N5820 - 1N5822 CREAT BY ART Pb 3.0AMPS. Schottky Barrier Rectifiers DO-201AD RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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1N5820
1N5822
DO-201AD
DO-201AD
MIL-STD-202,
1N5820
1N5821-1N5822
300us
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N5821
Abstract: 1N5821 diode do-201
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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1N582x
D0-201
N5821
1N5821
diode do-201
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Untitled
Abstract: No abstract text available
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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1N582x
D0-201
1N5820
1N5821
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