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STMicroelectronics 1N5818 SCHOTTKY DO15 30V 1A 150C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5818	Ammo Pack	26,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.05656	Buy Now
	1N5818	Cut Tape	4,313		1	1 $0.38 10 $0.266 100 $0.1343 1000 $0.0813 10000 $0.0813	Buy Now
Avnet Americas	1N5818	Ammo Pack	12,000	15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.04478	Buy Now
	1N5818	Ammo Pack		15 Weeks, 3 Days	1	1 $0.415 10 $0.291 100 $0.148 1000 $0.148 10000 $0.148	Buy Now
Mouser Electronics	1N5818		56,099			1 $0.39 10 $0.225 100 $0.11 1000 $0.109 10000 $0.092	Buy Now
Bristol Electronics	1N5818		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	1N5818		3,100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	1N5818		61			1 $0.075 10 $0.075 100 $0.075 1000 $0.075 10000 $0.075	Buy Now
	1N5818		192			1 $0.189 10 $0.189 100 $0.0945 1000 $0.0567 10000 $0.0567	Buy Now

TME	1N5818		3,130		10	1 - 10 $0.0962 100 $0.0568 1000 $0.0502 10000 $0.0451	Buy Now
ComSIT USA	1N5818		8,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Diodes Incorporated 1N5818-T DIODE SCHOTTKY 30V 1A DO41
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5818-T	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.04848	Buy Now
Avnet Americas	1N5818-T	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.03531	Buy Now
	1N5818-T	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.03531	Buy Now
Mouser Electronics	1N5818-T		11,597			1 $0.33 10 $0.227 100 $0.091 1000 $0.068 10000 $0.068	Buy Now
TME	1N5818-T				10	1 - 10 $0.0791 100 $0.0623 1000 $0.0495 10000 $0.0472	Get Quote
Avnet Asia	1N5818-T			12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	1N5818-T		25,000		1	1 - 10 - 100 - 1000 - 10000 $0.0421	Buy Now
Vishay Semiconductors 1N5818-E3/53 DIODE SCHOTTKY 30V 1A DO204AL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5818-E3/53	Ammo Pack	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.11794	Buy Now
NTE Electronics Inc 1N5818 DIODE SCHOTTKY 30V 1A DO41
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5818	Bag	8,875		20	1 - 10 - 100 $0.232 1000 $0.232 10000 $0.232	Buy Now
Onlinecomponents.com	1N5818		2,940			1 - 10 - 100 $0.33 1000 $0.256 10000 $0.2268	Buy Now
Master Electronics	1N5818		2,940			1 - 10 - 100 $0.33 1000 $0.256 10000 $0.2268	Buy Now
onsemi 1N5818RLG DIODE SCHOTTKY 30V 1A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5818RLG	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.1039	Buy Now
Avnet Americas	1N5818RLG	Reel	20,000	16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.10973	Buy Now
Mouser Electronics	1N5818RLG		28,266			1 $0.36 10 $0.304 100 $0.207 1000 $0.121 10000 $0.102	Buy Now
Rochester Electronics	1N5818RLG		183,322		1	1 $0.1111 10 $0.1111 100 $0.1044 1000 $0.0944 10000 $0.0944	Buy Now
ComSIT USA	1N5818RLG		4,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Asia	1N5818RLG			16 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.10026	Buy Now

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1N5818 Datasheets (136)

Part	Manufacturer	Description	Type	PDF
1N5818	Bytes	1.0 AMP SCHOTTKY BARRIER RECTIFIERS	Original	PDF
1N5818	Comchip Technology	1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 30 V.	Original	PDF
1N5818	Daesan Electronics	CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts	Original	PDF
1N5818	DC Components	TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	Diodes	1.0A SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	Diodes	Short Form Selection Guide	Original	PDF
1N5818	Diodes	1.0A SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	Diotec	Diode, 1A, 30V, Schottky Barrier Rectifier	Original	PDF
1N5818	Diotec	Si-Schottky-Rectifiers	Original	PDF
1N5818	EIC Semiconductor	SCHOTTKY BARRIER RECTIFIER DIODES	Original	PDF
1N5818	Fagor	30 V, 1A schottky barrier rectifier	Original	PDF
1N5818	Fairchild Semiconductor	Schottky Rectifiers	Original	PDF
1N5818	Fairchild Semiconductor	1.0 Ampere Schottky Barrier Rectifiers	Original	PDF
1N5818	Fairchild Semiconductor	Schottky Barrier Rectifier	Original	PDF

1N5818	FCI	Diode, 1A, 30V, Schottky Barrier Diode	Original	PDF
1N5818	Formosa	1.0 AMP SCHOTTKY BARRIER RECTIFIERS	Original	PDF
1N5818	Galaxy Semi-Conductor Holdings	SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	General Semiconductor	SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	Good-Ark	SCHOTTKY BARRIER RECTIFIER	Original	PDF
1N5818	HY Electronic	SCHOTTKY BARRIER RECTIFIERS	Original	PDF

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1N5818 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
diode 1n5818 Abstract: No abstract text available Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical	Original	PDF	VS-1N5818, VS-1N5818-M3 DO-204AL DO-41) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. diode 1n5818
Untitled Abstract: No abstract text available Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,	Original	PDF	PD-20590 1N5818 1N5819 1N5818/ 1N5819 08-Mar-07
Untitled Abstract: No abstract text available Text: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT	Original	PDF	1N5817 1N5819 1N5817 1N5818
1N5818 Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225	Original	PDF	PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N5818, 1N5818 datasheets diode 1n5818 1N581X DO-204AL
datasheets diode 1n5819 Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been	Original	PDF	PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N581X 1N581X datasheets diode 1n5819 1N5818 1N5818-1N5819 DO-204AL
datasheets diode 1n5818 Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19 Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	PDF	1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19
Untitled Abstract: No abstract text available Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance	Original	PDF	1N5818 DO-204AL 1N5818 11-Mar-11
1N5818 Abstract: DO-204AL Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance	Original	PDF	1N5818 DO-204AL 1N5818 18-Jul-08 DO-204AL
mur860 diode Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821	Original	PDF	1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
MBR130P Abstract: MBR120P Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.	Original	PDF	1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P 1N5817/MBR11EP/MBR120P 1N5818/MBR130P 1N5819/MBR140F MBR130P MBR120P
220NF Abstract: 100UF 1N4007 470nF C10B ferrite C5A data sheet 1N4007 diode diode 1n4007 datasheets diode 1n5818 STPS130A Text: D3a 1N4007 19 C4a 470nF C3a 100µF L2a C6a C5a 100µF 470nF 20 36 EXTM-A VCTRL-A 22 35 C9a 10µF EXTM-B VCTRL-B Vup-A VoTX-A 25 Ferrite Bead D4a 1N5818 D1a STPS130A L3a 11 LX-A 21 ISEL-A 34 ISEL-B 22µH Rsel-A 11KOhm C1 100µF C2 100nF C13a 10nF C10a 220nF	Original	PDF	1N4007 470nF 1N5818 STPS130A 11KOhm 100nF BAT43 220nF 220NF 100UF 1N4007 470nF C10B ferrite C5A data sheet 1N4007 diode diode 1n4007 datasheets diode 1n5818 STPS130A
1N5818WB Abstract: 1N5819WB diode sod-123 marking code 120 1N5817WB Text: 1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	PDF	1N5817WB-1N5819WB 1N5817WB: 1N5818WB: 1N5819WB: OD-123 1N5817WB 1N5818WB 1N5819WB OD-123 1N5818WB 1N5819WB diode sod-123 marking code 120 1N5817WB
1N5819M Abstract: 1N5817M 1N5818M Text: 1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: 1N5817M 1N5818M 1N5819M Features • · · · · High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability	Original	PDF	1N5817M 1N5818M 1N5819M MIL-STD-202, 1N5817M 1N5818M 1N5819M
1N5818 Abstract: No abstract text available Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V Tj max. 125 °C DO-204AL (DO-41) Features Mechanical Data • • • •	Original	PDF	1N5817, 1N5818, 1N5819 DO-204AL DO-41) J-STD-002B JESD22-B102D 1N5818

1N5819M Abstract: No abstract text available Text: 1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: 1N5817M 1N5818M 1N5819M Features • · · · · High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability Packaged for Surface Mount Applications	Original	PDF	1N5817M 1N5818M 1N5819M MIL-STD-202, DS13001 1N5817M/1N5818M/1N5819M 1N5819M
1N5818 Abstract: DO-204AL RS-296-D Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance	Original	PDF	1N5818 DO-204AL 1N5818 DO-204AL RS-296-D
1N5819 Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES	Original	PDF	M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
1n4001 melf Abstract: BY253 BY254 1N5819M Text: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A	OCR Scan	PDF	1N5817 1N5819 DO-41 1N5817M 1N5819M 1N5818 1N5819 1N5818M 1n4001 melf BY253 BY254 1N5819M
1N5819a Abstract: No abstract text available Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,	OCR Scan	PDF	1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a
Untitled Abstract: No abstract text available Text: Schottky Rectifiers 1.0 to 75 Amperes 20 to 60 Volts 1.0 lo AMPS « ta <°C) 3.0 25 25 25 25 25 50 75 80 ^ IFSM (AM PS) 2.0 Î CASE tn DO-41 * VRRM (VOLTS) 7 DO-201 AD 20 1N5817 CRSH1-2 CRSH2-2 1N5820 30 1N5818 CRSH1-3 CRSH2-3 1N5821 40 1N5819 CRSH1-4 CRSH2-4	OCR Scan	PDF	1N5817 1N5818 1N5819 DO-41 DO-201 1N5820 1N5821 1N5822 DO-41
SR560 DO-201 Abstract: 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SR120 SR130 SR140 Text: RECTRON ELECTRONIC 7blG24ü GGOOlbb 023 • RECT b4E D cRECTRON RECTIFIER SPECIALISTS SCHOTTKY BARRIER RECTIFIERS ^ \ ~ ^ ~ ~ ^ P R V V 20 40 35 30 45 60 50 C ASE lo ( a K ^ O . 1.0 1N5817 1N5818 - 1N5819 - 1.0 SR120 SR 1 3 0 - SR140 - - — SR16 0 SR 1 5 0	OCR Scan	PDF	7blG24Ã 1N5817 1N5818 1N5819 DO-41 SR120 SR130 SR140 SR150 SR560 DO-201 1N5820 1N5821 1N5822
IN5818 Abstract: lN5819 1N5817 1N5818 1N5819 1N58I7 Text: Datasheet 1N5817 1N5818 1N5819 vSemciconductor v n i iCorp. i SCHOTTKY BARRIER R E C T IF IE R • JEDEC DO-41 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors DESCRIPTION	OCR Scan	PDF	1N5817 1N5818 1N5819 DO-41 1N5817 1N5818 1N5819 IN5818 lN5819 1N58I7
1N5819M Abstract: n5817 1N5817M 1N5818M Schottky MELF Package Text: 1N5817M / 1N5818M / 1 N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability Packaged for Surface Mount Applications Mechanical Data	OCR Scan	PDF	1N5817M /1N5818M /1N5819M MIL-STD-202, 1N5818M 1N5819M DS13001 1N5817M/1N5818M/1N5819M n5817 Schottky MELF Package
MBR140P Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m Text: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R	OCR Scan	PDF	1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P BR130P BR115P MBR140P 1N5817-19 J581 5819m

1N5818 Search Results

1N5818 Price and Stock

STMicroelectronics 1N5818

Diodes Incorporated 1N5818-T

Vishay Semiconductors 1N5818-E3/53

NTE Electronics Inc 1N5818

onsemi 1N5818RLG

1N5818 Datasheets (136)

1N5818 Datasheets Context Search

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