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    19DEC07 Search Results

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    MIC24D10-0101

    Abstract: No abstract text available
    Text: more than you expect Integrated 2x6 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB min. -16dB min. Return Loss -12dB min. -12dB min. Cross Talk -30dB min.


    Original     		PDF 350uH 1500VAC -20dB -16dB -12dB -30dB 100kHz, MIC24D10-0101

    manual temperature controller CHB 702

    Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
    Text: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most


    Original     		PDF MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 MC9S12XF512V1RM 02-October-2008 manual temperature controller CHB 702 MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference

    C 5478

    Abstract: AN609 SUP40N25-60
    Text: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP40N25-60 AN609 19-Dec-07 C 5478

    mosfet 4414

    Abstract: Si8451DB AN609
    Text: Si8451DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8451DB AN609 19-Dec-07 mosfet 4414

    AN609

    Abstract: No abstract text available
    Text: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1405BDH AN609 19-Dec-07

    31117

    Abstract: AN609 M/LM 31117
    Text: SiB414DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SiB414DK AN609 19-Dec-07 31117 M/LM 31117

    AN609

    Abstract: SUP45N03-13L
    Text: SUP45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP45N03-13L AN609 19-Dec-07

    4614 mosfet

    Abstract: 60241 C diode 1334 MOSFET 4614 AN609 Si8417DB 18243 68338
    Text: Si8417DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8417DB AN609 19-Dec-07 4614 mosfet 60241 C diode 1334 MOSFET 4614 18243 68338

    SUM110P06-08L

    Abstract: 7106 transistor m 9587 AN609
    Text: SUM110P06-08L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM110P06-08L AN609 19-Dec-07 7106 transistor m 9587

    AN609

    Abstract: Si4840BDY
    Text: Si4840BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4840BDY AN609 19-Dec-07

    6948

    Abstract: AN609 SUP28N15-52
    Text: SUP28N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP28N15-52 AN609 19-Dec-07 6948

    27332

    Abstract: AN609 SUP60N10-16L
    Text: SUP60N10-16L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP60N10-16L AN609 19-Dec-07 27332

    7922 diode

    Abstract: AN609
    Text: Si4648DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4648DY AN609 19-Dec-07 7922 diode

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 4267 MHz 4442 MHz Tuning Voltage: 0.1 16 VDC Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm Supply Current: 30 40 mA Harmonic Suppression 2nd Harmonic : -20 -10


    Original     		PDF 10kHz 100kHz CVCO55XX CVCO55CC-4267-4442 19-Dec-07

    Untitled

    Abstract: No abstract text available
    Text: more than you expect Integrated 2x4 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB typ. -16dB typ. Return Loss -14dB typ. -12dB typ. Cross Talk -30dB typ.


    Original     		PDF 350uH 1500VAC -20dB -16dB -14dB -12dB -30dB 100kHz,

    PTCSGM3

    Abstract: No abstract text available
    Text: 2381 671 912./PTCSG.T.BE Vishay BCcomponents PTC Thermistors, For Temperature Protection FEATURES • • • • • • • • • QUICK REFERENCE DATA PARAMETER Well-defined protection temperature levels Fast reaction time < 30 s in still air Accurate resistance for ease of circuit design


    Original     		PDF 2002/95/EC 2002/96/EC 08-Apr-05 PTCSGM3

    Vishay 2222 045

    Abstract: MAL214036221E3 MAL21
    Text: 140 RTM Vishay BCcomponents Aluminum Capacitors Radial, High Temperature Miniature FEATURES • Polarized aluminum non-solid electrolyte electrolytic capacitors, RoHS • Radial leads, cylindrical aluminum case with COMPLIANT pressure relief, insulated with a blue sleeve


    Original     		PDF 18-Jul-08 Vishay 2222 045 MAL214036221E3 MAL21

    Si1067

    Abstract: AN609 Si1067X
    Text: Si1067X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1067X AN609 19-Dec-07 Si1067

    68307

    Abstract: AN609 Si1065X
    Text: Si1065X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1065X AN609 19-Dec-07 68307

    AN609

    Abstract: No abstract text available
    Text: Si1905BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1905BDH AN609 19-Dec-07

    AN609

    Abstract: 25803 12679
    Text: Si7166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7166DP AN609 19-Dec-07 25803 12679

    7336

    Abstract: AN609 SUU50N03-09P 68326
    Text: SUU50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUU50N03-09P AN609 19-Dec-07 7336 68326

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 CSC" RELEASED FOR PU BLIC A TIO N PT3T REVISIONS SEJE J B Y AMP INCORPORATED.ALL R IG H TS RESERVED . DESCRIPTION LTR ECR-07-030667 R E V I S ED 0 .5 DUN 1 Ì T 19DEC07 APVO J.S S.M D & ~7* X? 'V h ; 1 >J — - r » »


    OCR Scan     		PDF ECR-07-030667 19DEC07 17Q708

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. k// COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST HM 00 P LTR DESCRIPTION DWN APVD J OBS 5 - , REV ECO—07—025549 19DEC07 LH SA K REVISED PER E C O -0 8 -0 3 1 715


    OCR Scan     		PDF 19DEC07 12MAY09 31MAR2000