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    SPC Multicomp MP-19-70-1-TGG

    Rf/Coaxial, Sma Jack, Straight, 50 Ohm, Solder; Connector Type:Sma Coaxial; Connector Body Style:Edge Launch Jack; Coaxial Termination:Solder; Impedance:50Ohm; Coaxial Cable Types:-; Contact Material:Beryllium Copper; Product Range:-Rohs Compliant: Yes |Multicomp Pro MP-19-70-1-TGG
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    Newark MP-19-70-1-TGG Bulk 722 1
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    19-70-1 TGG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    multicomp sma

    Abstract: transistor D1710 brass jis c3604 SMA jack 19-70-TGG COPPER C3604 d1710 B196 C17300 JIS-C3604
    Text: REVISIONS PART NO. 19-70-TGG ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Sumana 31/1/08 CHECKD DATE APPRVD DATE Suresh 31/1/08 G. C 15/2/08 Dimensions : Millimetres Inches This data sheet and its contents (the "Information") belong to the Premier Farnell Group


    Original
    19-70-TGG M10000686 19-70-TGG multicomp sma transistor D1710 brass jis c3604 SMA jack COPPER C3604 d1710 B196 C17300 JIS-C3604 PDF

    D0005M

    Abstract: G000557
    Text: IB M 1 1 S 1 3 2 0 B N IB M 1 1 S 1 3 2 0 B L 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/VA Access Time From Address 30ns 35ns


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    72-Pin 110ns 130ns 128ms 0000S5Û IBM11S1320BN IBM11S1320BL 1Mx32 03H7113 SA14-4452-01 D0005M G000557 PDF

    TGUI9680

    Abstract: tgui96 wram
    Text: TGUI9680 6.0 PRELIMINARY Electrical Specifications This section describes the specifications of the TGUI9680. The following topics are discussed: 6.1 Absolute Maximum Ratings 6.2 DC Specifications 6.3 AC Specifications 6.1 Absolute Maximum Ratings Table 6-1. Absolute Maximum Ratings


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    TGUI9680 TGUI9680. TGUI9680 TGG21 0DG0433 tgui96 wram PDF

    NN5118160

    Abstract: No abstract text available
    Text: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS


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    NN5116160A NN5118160A 16bit NN5116160A/18160A NN5116 60AXX 128ms NN51181 NN5118160 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: MM1M0J32L/MM1M0J36L CMOS 1Mx 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 32 Megabit Dynamic Random Access Memory Module organized as 1,048,576 x 32 x 36 bits in a 72 lead single inline module. The module contains eight 1M x 4bit Dynamic Random Access


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    MM1M0J32L/MM1M0J36L 32bit 36bit MM1M0J32L/J36L MM1M0J13- 57REF MM1M0J32UMM1M0J36L x32blt/x36bit CIQCI02D2 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 4 3 6 1 1 Q L A IB M 0 4 1 8 1 1 Q L A Preliminary 32K X 36 & 64K X 18 SRAM Features • Common I/O • 32K x 36 or 64K x 18 Organizations • Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with


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    IBM043611QLA IBM041811QLA PDF

    dq35j

    Abstract: Nippon capacitors
    Text: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access


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    MM2M0J32L MM2M0J36L 32bit 36bit MM1M0J32L/J36L MM2M0J32UMM2M0J36L x32biVx36blt dq35j Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: NN511663 / NN511666series Fast Page Mode _ _w / CMOS 64Kx 16bit Dynamic RAM NPNAV DESCRIPTION The NN511663/1666 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511663/1666 series is fabricated with advanced CMOS technology and designed with innovative


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    NN511663 NN511666series 16bit NN511663/1666 NN511663/ NN511666aertes NN511663XXI PDF

    Untitled

    Abstract: No abstract text available
    Text: = = = ¥ = = = r= 7 = IB M 0 4 3 6 1 1 R L A IB M 0 4 1 8 1 1 R L A Preliminary 32KX36&64KX18SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clock compatible with


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    32KX36 64KX18SRAM IBM043611RLA IBM041811RLA 03H9039 SA14-4658-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS


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    NN51V16160A/ NN51V18160A 16bit NN51V16160A/18160A 128ms NN51V18 60AXX PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 0 4 1 8 1 A R L A B IB M 0 4 3 6 1 A R L A B Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Latched Outputs • 0.5 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode of Opera­


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    77H9963 0G042Ã IBM04181ARLAB IBM04361ARLAB PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a Preliminary Specification d e s c rip tio n The NN51V4260A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN51V4260A series is fabricated with advanced CMOS technology and de­


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    NN51V4260A 256KX 16bit NN51V4260AL 0Q0G57T NNS1V4260A PDF

    Z8070

    Abstract: No abstract text available
    Text: r ^ PIN GRID ARRAY SOCKETS Standard, Long Solder Tail & Low Profile RRËGI-DIPi m _ -m Series 510, 511, 515 • Series 510, 511, & 515 PG A sockets are available in three solder tail lengths: standard, long and low profile. • C hoice o f three low force clips to


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    ti771 0GD072 Z8070 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS


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    NN5116165A/ NN5118165A 16bit NN5116165A/18165A NN5116 65AXX 128ms NN51181 PDF

    CH9055A

    Abstract: CH9055
    Text: O CH9055 CHRONTEL PC Clock Generator Features • Generates up to 16 preset frequencies, 4 peripheral clocks, and buffers input reference frequency • Power down, slow down, stop clock, or output enable feature supporting “Green PC” applications • Smooth glitch-free frequency transitions


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    CH9055 x86-based AV9155 20-pin CH9055 CH9055A 84MHz 16MHz 24MHz CH9055A PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative


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    NN51V18165B 16bit NN51V18165BL 1005bSD NN51V181 PDF

    TUA4300P

    Abstract: No abstract text available
    Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist­ ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu­ lator and stereo decoder/noiseblanker.


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    4300P 4300P 535b05 fi23SbDS P-LCC-68-1 12x45Â TUA4300P PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative


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    NN51V18160B 16bit NN51V18160BL 0QQ11CH NN51V181 128ms PDF

    nn5117805

    Abstract: No abstract text available
    Text: NN5117805A series EDO Hyper Page Mode CMOS 2M x 8bit Dynamic RAM Bv w N Preliminary Specification d e s c rip tio n The NN5117805A series is a high performance CMOS Dynamic Random Access Memory organized as 2,097,152 words by 8 bits. The NN5117805A series is fabricated with advanced CMOS technology and de­


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    NN5117805A NN5117805AL NN5117805AX' 128ms nn5117805 PDF

    HN62428P

    Abstract: No abstract text available
    Text: H I TA C H I / L O G I C / A R R A Y S / M E 11 SIE » • M M T b SO B D01 7 73 ñ IBS HN62428 Series- Preliminary - T - H 4 - IS M S ’ 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62428 Series is an 8-Megabit CMOS Mask


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    HN62428 16-bit) 16-bit 42-pin 44-lead HN62428) HN62428P PDF

    NN514256

    Abstract: P26SJ-2A6 NNS14256 256Kx4bit
    Text: NN514256 series Fast Page Mode CMOS 256K x 4bit Dynamic RAM DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed


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    NN514256 256Kx NN5142S6 D00D2T0 NN514256XX P26SJ-2A6 NNS14256 256Kx4bit PDF

    Untitled

    Abstract: No abstract text available
    Text: P 7 M-Cfbol 7/92 ^ O D U E H R 1 / \ ß~7V-/3-5l 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M P O N E N T S r i . f X J ù~ì^U ' 0-s 408 492-1400 (408)492-1500 10 to 1200 MHz jo -8 Cascadable Amplifier AC1264 (Typical Values) High Gain .


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    2225-K AC1264 TGGfl334 GDD0110 PDF

    NN511662

    Abstract: No abstract text available
    Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    NN511662 16bit NN511662L G0Q153Ö NNS11662 NN511662XX PDF

    PTN hn624017

    Abstract: DP-42 HN624017F-17 HN624017FB-17 HN624017FP-17 HN624017P-17 HN624017TFP-17 Hitachi Scans-001 C1138
    Text: HN624017 Series Preliminary 16M 1M X 16-bit and (2M x 8-bit) M ask ROM • DESCRIPTION The Hitachi HN624017 is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The low power consumption of this device makes it ideal for


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    HN624017 16-bit) 16-Megabit 16-bit 42-pin and44-lead 44-lead PTN hn624017 DP-42 HN624017F-17 HN624017FB-17 HN624017FP-17 HN624017P-17 HN624017TFP-17 Hitachi Scans-001 C1138 PDF