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    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D

    Untitled

    Abstract: No abstract text available
    Text: PWS Axial leaded polypropylene film with aluminum foil electrodes capacitors for power semiconductors Features •  Self Healing High current   Low ESR High pulse current ratings   Switching power supplies Deflection circuits Applications 


    Original     		PDF 100VDC Ca52KJ 153PWS630KD 154PWS630KG 17x29 153PWS102KG 154PWS630KJ 153PWS152KG 154PWS102KJ 153PWS202KG

    Untitled

    Abstract: No abstract text available
    Text: High dvdt – Good Pulse Current – Stable with temperature and Frequency FEATURES APPLICATIONS Inverters/Converters – Power Semiconductor circuits – Induction Heating – Switching Power Supplies Operating Temperature Range -55°C to +85°C +10% at 1 kHz, 25°C


    Original     		PDF 100VDC 405PPA850KS 205PPA850K 29x55 475PPA700KS 205PPA102KR 475PPA700K 205PPA102KS 475PPA850KS 205PPA122KR

    PCC89

    Abstract: Btm 220 uPD754264 6P60-P63 PD754264GS-XXX-BA5 BTM-111 F88H BC 248 n4233268 U12287E
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD754264 U12287JJ1V1UM00 PD754264, 75F4264. FAX044548-7900 PCC89 Btm 220 uPD754264 6P60-P63 PD754264GS-XXX-BA5 BTM-111 F88H BC 248 n4233268 U12287E

    Btm 220

    Abstract: 275mov hlx crystal PD754144 uPD754144 uPD754244 PTH01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD754144 PD754144 PD754244 U10676JJ3V0UM00 U10676JJ3V0UM U10676JJ PD754144, FAX044435-9608 Btm 220 275mov hlx crystal uPD754144 uPD754244 PTH01

    Untitled

    Abstract: No abstract text available
    Text: Polypropylene Film Capacitors for Power Semiconductor Circuits PPA • Snubber Capacitor for Energy Conversion • High Voltage in Power semiconductor Circuits • High current • SMPS • High Pulse Current Applications • Induction heaters Operating Temperature Range


    Original     		PDF 100VDC 000x59 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS 205PPA122KS

    2SC1424

    Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS


    Original     		PDF NE734 NE73435) NE734 OT-143) 24-Hour 2SC1424 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE73400 NE73416

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Low ESR - High Current – High pulse current ratings APPLICATIONS Power semiconductor Circuits – SCR Commutation – Deflection Circuits – Switching Power supplies Operating Temperature Range Capacitance Tolerance AC voltage 50/60 Hz Dissipation Factor (MAX)


    Original     		PDF 100VDC 152KJ 153PWS630KD 154PWS630KG 17x29 153PWS102KG 154PWS630KJ 153PWS152KG 154PWS102KJ 153PWS202KG

    Untitled

    Abstract: No abstract text available
    Text: PPA Axial leaded metallized polypropylene film capacitors for power semiconductors Features •  Self Healing High dvdt   Stable with frequency and temperature Good pulse current ratings   Switching power supplies Induction Heating Applications


    Original     		PDF 100VDC 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS 205PPA122KS 565PPA700K

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F

    Untitled

    Abstract: No abstract text available
    Text: PPA Axial leaded metallized polypropylene film capacitors for power semiconductors Features •  Self Healing High dvdt   Stable with frequency and temperature Good pulse current ratings   Switching power supplies Induction Heating Applications


    Original     		PDF 100VDC 205PPA850KD34 475PPA700KS 205PPA850K 29x55 475PPA700K 205PPA102KR 475PPA850KS 205PPA102KS 565PPA700KS

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431

    dh165

    Abstract: xenon tube
    Text: LARGE SIZED ALUMINUM ELECTROLYTIC CAPACITORS PH Series �5~35℃ 5,000Times. �Non-solvent proof. �For photo flash. �RoHS compliant. �Halogen-free capacitors are also available. SPECIFICATIONS ltem Characteristics Rated Voltage 330 VDC Operating Temperature Range


    Original     		PDF 000Times. 120Hz) RC-3801A dh165 xenon tube

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR

    NEC 720114

    Abstract: marvell 88sx7042 mobile charger circuit using 13001 online ups service manual back-ups ES 500 RTL8111DL 88SX7042 JM20330 Design Guide JM20330 hdd enclosure PL-2303HX
    Text: MAIN CATALOG 2010-II Graphic Adapter page 7 USB Serial Adapter page 32 Router RedRapid X page 46 Table of Contents Multimedia USB Microscope,


    Original     		PDF 2010-II DM-30017 NEC 720114 marvell 88sx7042 mobile charger circuit using 13001 online ups service manual back-ups ES 500 RTL8111DL 88SX7042 JM20330 Design Guide JM20330 hdd enclosure PL-2303HX

    224PPA302KS

    Abstract: 103PPA302K 105PPA202K
    Text: Polypropylene Film Capacitors for Power Semiconductor Circuits PPA • Snubber Capacitor for Energy Conversion • High Voltage in Power emiconductor Circuits • High current • SMPS • High Pulse Current Applications • Induction heaters Operating Temperature


    Original     		PDF 100VDC 475PPA700K 155PPA152KS 37x59 475PPA700KS 205PPA700KN 29x46 475PPA850KS 205PPA850K 29x55 224PPA302KS 103PPA302K 105PPA202K

    20X49

    Abstract: No abstract text available
    Text: • rry m F* J1 Photo Flash Use Aluminum Electrolytic Capacitors • For photoflash use Specially Designed for Photoflash Use, Small and Large sized, Aluminum Electrolytic Capacitors. The aluminum electrolytic capacitor for photoflash use is a small sized, large capacitance capacitor which converts


    OCR Scan     		PDF 120Hz 600fiF 18x30 18x31 18x34 18x38 16x26 16x29 16x32 20X49

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    OCI 531

    Abstract: No abstract text available
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


    OCR Scan     		PDF NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531

    2SC1424

    Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F


    OCR Scan     		PDF NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    18x29

    Abstract: No abstract text available
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ♦SPECIFICATIONS Items : Characteristics Category Temperature Range -20 to + 5 5 t Rated Voltage Range Capacitance Tolerance Leakage Current 300 & 330V* -10 to +20% V 1=1XC Where, I : Max. leakage current (pA), C : Nominal capacitance (mR


    OCR Scan     		PDF 06max. 120Hz) 10X26 10X33 10X43 16X24 16X27 16X28 16X30 18x29

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


    OCR Scan     		PDF NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K