Untitled
Abstract: No abstract text available
Text: 2/7 TAI-SAW TECHNOLOGY CO., LTD. Crystal Unit SMD 3.2x2.5 26.0MHz MODEL NO.: TZ2192A REV. NO.: 2 Revise: Rev. Rev. Page Rev. Account Date 1 2 N/A 3 Initial release ESR change to 18ohm 10/19/10 N/A 10/26/10 ECN- TAI-SAW TECHNOLOGY CO., LTD. Ref. No. Revised by
|
Original
|
TZ2192A
18ohm
EIAJED-4701
30min)
06kg/cm
EIAJED-4701-3
B-123A
|
PDF
|
IRF9120
Abstract: STLC3055N E-STLC3055N CFL DC 12V TQFP44 tip off 0401 transistor circuit tip off 0401
Text: STLC3055N WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FEATURES Figure 1. Package MONOCHIP SLIC OPTIMISED FOR WLL & VoIP APPLICATIONS IMPLEMENT ALL KEY FEATURES OF THE BORSHT FUNCTION
|
Original
|
STLC3055N
TQFP44
IRF9120
STLC3055N
E-STLC3055N
CFL DC 12V
TQFP44
tip off 0401 transistor circuit
tip off 0401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) 3ns 2.5ns
|
Original
|
V59C1G02168QBP
16Mbit
DDR2-667
DDR2-800
V59C1G02168QBP
|
PDF
|
9.1 b3
Abstract: No abstract text available
Text: V59C1256 404/804/164 QA*I HIGH PERFORMANCE 256Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) PRELIMINARY 37 3 25 DDR2-533 DDR2-667 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4)
|
Original
|
V59C1256
256Mbit
16Mbit
DDR2-533
DDR2-667
DDR2-800
400MHz
9.1 b3
|
PDF
|
9.1 b3
Abstract: No abstract text available
Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
|
Original
|
V59C1256
256Mbit
16Mbit
DDR2-533
DDR2-667
DDR2-800
9.1 b3
|
PDF
|
elko smd
Abstract: MQE vco murata vco module mqe mqe 601 MQE MURATA vco MQE MURATA 601-902 MURATA MQE VCO ALPS ELKO smd CAPACITOR MQE MURATA 601-902 data
Text: Wireless Components 10-pin Single PLL PMB2341 Version Application Note 08.99 preliminary CONFIDENTIAL Revision History: Current Version: 06.99 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)
|
Original
|
10-pin
PMB2341
100pF
390pF
100nF
10ohm
18ohm
47ohm
10kohm
PMB2341
elko smd
MQE vco
murata vco module mqe
mqe 601
MQE MURATA vco
MQE MURATA 601-902
MURATA MQE
VCO ALPS
ELKO smd CAPACITOR
MQE MURATA 601-902 data
|
PDF
|
uln2503
Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Text: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and
|
Original
|
Mo500/ULF500
IRF200
IRF250
IRF300
IRF400
IRF500
1-10ohm
uln2503
irf250 datasheet
METAL-CLAD Wire wound resistors
1000v 200w Transistor
ULN400
rara irn
W203
ULN200
transistor irf250
IRF 024
|
PDF
|
k4t51163qg
Abstract: K4T51083Qg
Text: K4T51083QG K4T51163QG DDR2-1066 SDRAM 512Mb G-die DDR2-1066 SDRAM Specification 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
K4T51083QG
K4T51163QG
DDR2-1066
512Mb
60FBGA
6-10per)
k4t51163qg
|
PDF
|
k4t51163qg
Abstract: No abstract text available
Text: K4T51043QG K4T51083QG K4T51163QG DDR2 SDRAM 512Mb G-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
K4T51043QG
K4T51083QG
K4T51163QG
512Mb
60FBGA
84FBGA
6-10per)
k4t51163qg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.03, Feb. 2010 K4T56163QN 256Mb N-die DDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4T56163QN
256Mb
84FBGA
6-10per)
6-10per
|
PDF
|
K4T51163QI
Abstract: K4T51163QI-HC K4T51163QI-HCLF7
Text: DDR2 SDRAM K4T51163QI 512Mb I-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
K4T51163QI
512Mb
84FBGA
6-10per)
K4T51163QI
K4T51163QI-HC
K4T51163QI-HCLF7
|
PDF
|
K4T51083QI
Abstract: K4T51083QI-HC K4T51043QI K4T51163QI-HC k4t51163qi
Text: Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4T51043QI
K4T51083QI
K4T51163QI
512Mb
84FBGA
6-10per)
6-10per
K4T51083QI-HC
K4T51163QI-HC
k4t51163qi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 512Mb M-die DDR-II SDRAM Target 512Mb M-die DDR-II SDRAM Specification Version 0.11 Rev. 0.11 Apr. 2002 Page 1 of 65 512Mb M-die DDR-II SDRAM Target Contents 1. Key Feature 2. Package Pinout & Addressing 2.1 Package Pintout 2.2 Input/Output Function Description
|
Original
|
512Mb
|
PDF
|
K4T1G164QQ
Abstract: No abstract text available
Text: Industrial DDR2 SDRAM K4T1G164QQ 1Gb Q-die DDR2 SDRAM Specification 84FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial temp. -40’c to 95’c INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
K4T1G164QQ
84FBGA
6-10per)
K4T1G164QQ
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DDR2 SDRAM K4T28163QO 128Mb O-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
K4T28163QO
128Mb
84FBGA
6-10per)
|
PDF
|
K4T1G164QE-HC
Abstract: No abstract text available
Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
K4T1G044QE
K4T1G084QE
K4T1G164QE
60FBGA
84FBGA
6-10per)
6-10per
K4T1G164QE-HC
|
PDF
|
k4t51163qg
Abstract: k4t51163qg-hc
Text: K4T51043QG K4T51083QG K4T51163QG DDR2 SDRAM 512Mb G-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
K4T51043QG
K4T51083QG
K4T51163QG
512Mb
60FBGA
84FBGA
6-10per)
k4t51163qg
k4t51163qg-hc
|
PDF
|
flyback transformer 4kV
Abstract: morocco 9648 MGPWG-00007 step down trafo TRAFO STEP UP trafo 2kv ring generator SMD transformer ptc application note byt 78v conversion table PTC
Text: AN2132 APPLICATION NOTE STLC3075 VERY LOW SINGLE SUPPLY SLIC FOR WLL APPLICATION IN FLY-BACK CONFIGURATION The STLC3075 is a slic device specially designed for WLL Wireless Local Loop and ISDN Terminal Adapters. 1 WIRELESS LOCAL LOOP SYSTEM Figure 1. The main characteristics of this device consist in the possibility to:
|
Original
|
AN2132
STLC3075
AN2118)
flyback transformer 4kV
morocco 9648
MGPWG-00007
step down trafo
TRAFO STEP UP
trafo 2kv
ring generator SMD transformer
ptc application note
byt 78v
conversion table PTC
|
PDF
|
STP1080A
Abstract: IEEE1149
Text: STP1080A July 1997 UltraSPARC -I Data Buffer UDB-I DATA SHEET Companion Device for 167/200 MHz UltraSPARC-I Systems DESCRIPTION The UDB-I is a data buffer device used in UltraSPARC-I systems to connect the CPU and its external SRAM cache bus to the system bus:
|
Original
|
STP1080A
STP1080ABGA-83
STP1080ABGA-100
STP1080A
IEEE1149
|
PDF
|
SO-DIMM 144-pin
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH1S64CXJJ-12,-15 67108864-BIT 1048576-WORD BY 64-BIT SynchronousDRAM Serial PD Operation Clock and Data Conventions Data states onthe SDA line can change only during SCL LOW.SDA state changes during SCL HIGH are reserved
|
Original
|
MH1S64CXJJ-12
67108864-BIT
1048576-WORD
64-BIT
MIT-DS-0061-0
80Max
SO-DIMM 144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY5PS12423 L F HY5PS12823(L)F HY5PS121623(L)F 512Mb DDR-II SDRAM HY5PS12423(L)F HY5PS12823(L)F Rev. 0.52/Nov. 02 1 HY5PS12423(L)F HY5PS12823(L)F HY5PS121623(L)F REVISION HISTORY Revision No. Revision Date Page of Revsion Description of Change 0.2 June.02 page3
|
Original
|
HY5PS12423
HY5PS12823
HY5PS121623
512Mb
52/Nov.
|
PDF
|
cx3804
Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Text: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS
|
Original
|
1066MHz
800MHz
IT8752E
RTL8111C
RJ45/RJ11
G50VX
D8107
G60VX
cx3804
pegatron
pegatron A35
A35 pegatron
diode c0510
pegatron a24
Cx3808
q8607
IT8752E
tpc8118
|
PDF
|
smd diode c539
Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF
|
Original
|
S630/S670
BA60-00030A
BA68-40005L
BA70-00030A
BA72-00063A
BA73-00001A
BA92-00073A
0404agrams
smd diode c539
samsung sens r20
smd diode marking C535
toshiba dvd hdd schematic diagram
RA57
1400l
toshiba hdd schematic board
st smd diode marking code C701
SMD RA57
logitech 3 button
|
PDF
|
MC0603SAF1131T5E
Abstract: No abstract text available
Text: REVISIONS M ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION 1991 DRAWN RELEASED JN DATE » Effective: 7 / 8 / 0 2
|
OCR Scan
|
845kohm
Ta-1194
MC0603SAF1131T5E
|
PDF
|
