Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Downsized, 105C KMQ @Downsized from current standard KMG series @Solvent resistant type except 160 to 450Vdc see PRECAUTIONS AND GUIDELINES @RoHS Compliant Downsized KMG ?SPECIFICATIONS Items Characteristics Category
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450Vdc
100Vdc)
400Vdc)
450Vdc)
100Vdc
120Hz)
E1001H
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PDF
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Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS @Endurance with ripple current : 105C 1000 hours @Solvent-proof type except 350 to 400Vdc see PRECAUTIONS AND GUIDELINES Standard, 105C KME KMG downsized ?SPECIFICATIONS Items Characteristics Category Temperature Range
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Original
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400Vdc
100Vdc)
400Vdc)
100Vdc
120Hz)
E1001B
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PDF
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Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C longer life LXZ @Low impedance @Endurance with ripple current: 105C 2000 to 5000 hours @Solvent-proof type see PRECAUTIONS AND GUIDELINES LXV KME lower Z ?SPECIFICATIONS Items Characteristics
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Original
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100Vdc
120Hz)
E1001B
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PDF
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Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS Downsized, 105C New! KMQ @Downsized from current standard KMG series @Solvent-proof type except 160 to 450Vdc see PRECAUTIONS AND GUIDELINES downsized KMG ?SPECIFICATIONS Items Characteristics Category Temperature Range
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Original
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450Vdc
100Vdc)
400Vdc)
450Vdc)
100Vdc
120Hz)
10B12
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PDF
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1933E
Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Original
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M37280MF
M37280MK
M37280EKSP
1933E
caption
1AB3
25816
bc136
BC154
CR16 mitsubishi
cr64 cr65
VP1160
vp251
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PDF
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KME Series
Abstract: 1000MF 100MF 10MF 3B11 47MF KME electrolytic kme 35v KME 50 VB 220 M
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS @Endurance : 105C 4000 to 7000 hours @Long life and impedance specified version of KME series @Non solvent-proof KMY Long life, 105C KME longer life ?SPECIFICATIONS Items Characteristics Category Temperature Range
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Original
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50Vdc
120Hz)
Max50
10B12
10B16
16B25
16B31
18B35
KME Series
1000MF
100MF
10MF
3B11
47MF
KME electrolytic
kme 35v
KME 50 VB 220 M
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PDF
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ALNUP+161609
Abstract: No abstract text available
Text: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures
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Original
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106EE
ALNUP+161609
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PDF
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Untitled
Abstract: No abstract text available
Text: |V|C=RON 64K SYN CH RO N O U S SRAM X MT58LC64K16/18B3 16/18 S Y N C B U R S T S R A M 6 4 K x 1 6 /1 8 S R A M FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 8.5,9,10 and 1Ins
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OCR Scan
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MT58LC64K16/18B3
100-Pin
MT56L
C64K16/18B3
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PDF
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TN-58-11
Abstract: 18B-3
Text: |V |IC =R O N 64K SYNCHRONOUS SRAM M T5 8LC 64K 16/18B3 16/18 SY N C B U R S T SRAM X 64Kx 16/18 SRAM FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns Single +3.3V +10%/-5% pow er supply
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OCR Scan
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16/18B3
100-lead
MT58LC64K16/13B3
TN-58-11
18B-3
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T58LC128K16/18B3 128K X 16/18 SYNCBURST SRAM |V/|ICRON +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • PIN ASSIGNMENT Top View F ast access tim es: 8.5, 9 ,1 0 ,1 1 and 12 F ast O E # a ccess tim es: 5 an d 6ns
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OCR Scan
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T58LC128K16/18B3
MT5SLC12
K16/IBB3
Y27pm5
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PDF
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DYNAMIC RAM 65536 TEXAS
Abstract: diode CLDI-12 TMS4164FPL 4164 dynamic ram
Text: TEXAS INSTR iASIC/MEflORYJ 77 D E j fl1fal7a5 0040bT0 3 77C 4 0 6 9 0 Ô96Ï725 TEXAS ÎNSTR CASIC/MEMORVT D TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 18B3 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 65,536 X 4 Organization Single 5-V Supply 10% Tolerance
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OCR Scan
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0040bT0
TM4164EC4
22-Pin
TM4164EC4-12
TM4164EC4-15
TM4164EC4-20
DYNAMIC RAM 65536 TEXAS
diode CLDI-12
TMS4164FPL
4164 dynamic ram
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U |IC R O N 64K MT58LC64K16/18B3 16/18 SYNCBURST SRAM 64K x 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns Fast OE# access times: 5 and 6ns
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OCR Scan
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MT58LC64K16/18B3
100-lead
160-PIN
D0172GG
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON I 128K X TECHNOLOGY, INC. MT58LC128K16/18B3 16/18 SYNCBURST SRAM 128KX 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11ns
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OCR Scan
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MT58LC128K16/18B3
128KX
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T58LC64K16/18B3 64K X 16/18 SYNCBURST SRAM M IC R O N 64K x 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES F ast access tim es: 8 .5 ,9 , 10,11 and 12ns Fast O E# access tim es: 5 and 6ns Single +3.3V + 10% /-5% pow er su p p ly
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OCR Scan
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T58LC64K16/18B3
100-lead
MT58LCMK1
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PDF
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|
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MT58LC256K18
Abstract: No abstract text available
Text: ADVANCE • 256K TECHNOLOGY. INC MT58LC256K16/18B3 16/18 SYNCBURST SRAM 25 6 K X 16/18 SR A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11ns Fast OE# access time: 5ns
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OCR Scan
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MT58LC256K16/18B3
100-lead
MT58LC256K16/1BB3
MT58LC256K18
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K16/18B3 128K X 16/18 SYNCBURST SRAM MICRON • TECHNOLOGY, INC. SYNCHRONOUS SRAM 128KX 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10, 11 and 12
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OCR Scan
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MT58LC128K16/18B3
128KX
power-d53
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PDF
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Untitled
Abstract: No abstract text available
Text: SUPERSEDED BY MT58LC64K16/18B3 M IC R O N 64K X MT58LC64K16/18B2 16/18 SYNCBURST SRAM 64 K x 16/ 18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 9,10,11,12 and 14ns
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OCR Scan
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MT58LC64K16/18B3
MT58LC64K16/18B2
160-PIN
D0172GG
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PDF
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Untitled
Abstract: No abstract text available
Text: |U|ICRON 128K SYNCHRONOUS SRAM X MT58LC128K16/18B3 16/18 SYNCBURST SRAM 128Kx 16/18 SRAM FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 8.5,9,10 and 11ns Fast OE# access time: 5ns
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OCR Scan
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MT58LC128K16/18B3
128Kx
100-Pin
100-lead
MT58LC128K16/1883
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC128K16/18B3 128K X 16/18 SYNCBURST SRAM |U |IC = R O N +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8.5,9,10,11 and 12
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OCR Scan
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MT58LC128K16/18B3
160-PIN
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PDF
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18B-2
Abstract: No abstract text available
Text: SUPERSEDED BY MT58LC64K16/18B3 MT58LC64K16/18B2 64K X 16/18 SYNCBURST SRAM M IC R O N SYNCHRONOUS SRAM 64Kx 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER Fast access tim es: 4 ,1 0 , 11,12 and 14ns Fast O E# access tim es: 5 and 6ns Single +3.3V ±5% p ow er su p p ly
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OCR Scan
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MT58LC64K16/18B3
MT58LC64K16/18B2
100-pin
LC64K1Q/18B2
18B-2
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON I 64K TECHNOLOGY, INC. SYNCHRONOUS SRAM X MT58LC64K16/18B3 16/18 SYNCBURST SRAM 64K x 16/18 SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP
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OCR Scan
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MT58LC64K16/18B3
100-Pin
bul44
D01b077
|
PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE ji/II^ Q n íV I I MT58LC256K16/18B3 256KX 16/18 SYNCBURST SRAM SYNCHRONOUS SRAM 2 5 6 K x 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns
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OCR Scan
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MT58LC256K16/18B3
256KX
|
PDF
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Untitled
Abstract: No abstract text available
Text: MICRON I 64K TECHNOLOGY, INC. X MT58LC64K16/18B3 16/18 SYNCBURST SRAM 64Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns
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OCR Scan
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MT58LC64K16/18B3
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PDF
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az18
Abstract: No abstract text available
Text: ADVANCE 256K SYNCHRONOUS SRAM MT58LC256K16/18B3 16/18 SYNCBURST SRAM X 2 5 6 K X 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10 and 11ns Fast OE# access time: 5ns
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OCR Scan
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MT58LC256K16/18B3
100-lead
MT58LC256K16/1SB3
i11937
az18
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PDF
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