Untitled
Abstract: No abstract text available
Text: A4 REVISED PER ECO 11 005139 18APR11 RK HMR A4
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18APR11
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100 20L A1 diode
Abstract: SQD30N05-20L-GE3
Text: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)
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SQD30N05-20L
AEC-Q101
O-252
O-252
SQD30N05-20L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
100 20L A1 diode
SQD30N05-20L-GE3
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Untitled
Abstract: No abstract text available
Text: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance
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SQD50N04-4m1
AEC-Q101
O-252
O-252
SQD50N04-4m1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sud35n10
Abstract: No abstract text available
Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUD35N10-26P
O-252
SUD35N10-26P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sud35n10
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sud40n10-25-e3
Abstract: No abstract text available
Text: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUD40N10-25
O-252
SUD40N10-25
SUD40N10-25-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sud40n10-25-e3
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ILC-0402
Abstract: ILC0402ER1N0S ILC0402ER1N2S ILC0402ER1N5S ILC0402ER1N8S ILC0402ER2N2S ILC0402ER2N7S ILC0402ER3N3S ILC0402ER3N9S ILC0402ER4N7S
Text: ILC-0402 Vishay Dale Surface Mount, Multi Layer High Frequency Ceramic Inductors FEATURES • • • • High reliability Surface mountable Reflow or wave solderable Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel • Compliant to RoHS Directive 2002/95/EC
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ILC-0402
2002/95/EC
11-Mar-11
ILC-0402
ILC0402ER1N0S
ILC0402ER1N2S
ILC0402ER1N5S
ILC0402ER1N8S
ILC0402ER2N2S
ILC0402ER2N7S
ILC0402ER3N3S
ILC0402ER3N9S
ILC0402ER4N7S
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Untitled
Abstract: No abstract text available
Text: ILC-0603 Vishay Dale Surface Mount, Multi Layer High Frequency Ceramic Inductors FEATURES • • • • High reliability Surface mountable Reflow or wave solderable Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel • Compliant to RoHS Directive 2002/95/EC
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ILC-0603
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
E323964
25-OCT-11
20-SEP-11
18-APR-11
01-SEP-10
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SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0059-1201e
SMD Magnetics
smd marking code pJ 1219
SMD PJ 899
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Untitled
Abstract: No abstract text available
Text: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD50P04-08
2002/95/EC
O-252
SUD50P04-08-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SM6S10 thru SM6S36A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability
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SM6S10
SM6S36A
ISO7637-2
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-218AB
11-Mar-11
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ILC-0603
Abstract: ILC0603ER1N0S ILC0603ER1N2S ILC0603ER1N5S ILC0603ER1N8S ILC0603ER2N2S ILC0603ER2N7S ILC0603ER3N3S ILC0603ER3N9S ILC0603ER4N7S
Text: ILC-0603 Vishay Dale Surface Mount, Multi Layer High Frequency Ceramic Inductors FEATURES • • • • High reliability Surface mountable Reflow or wave solderable Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel • Compliant to RoHS Directive 2002/95/EC
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ILC-0603
2002/95/EC
11-Mar-11
ILC-0603
ILC0603ER1N0S
ILC0603ER1N2S
ILC0603ER1N5S
ILC0603ER1N8S
ILC0603ER2N2S
ILC0603ER2N7S
ILC0603ER3N3S
ILC0603ER3N9S
ILC0603ER4N7S
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Untitled
Abstract: No abstract text available
Text: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A)
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SQD40N04-10A
AEC-Q101
2002/95/EC
O-252
SQD40N04-10A-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD45P03-09
2002/95/EC
O-252
SUD45P03-09-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET
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SQD50P08-25L
2002/95/EC
AEC-Q101
O-252
O-252
SQD50P08-25L-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A)
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SQD50N06-09L
2002/95/EC
AEC-Q101
O-252
O-252
SQD50N06-09L-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQD50N03-06P
2002/95/EC
AEC-Q101
O-252
O-252
SQD50N03-06P-GE3
11-Mar-11
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sqd19p06
Abstract: diode 1919
Text: SQD19P06-60L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.055 RDS(on) (Ω) at VGS = - 4.5 V 0.100 ID (A) • TrenchFET Power MOSFET
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SQD19P06-60L
2002/95/EC
AEC-Q101
O-252
O-252
SQD19P06-60L-GE3
11-Mar-11
sqd19p06
diode 1919
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Untitled
Abstract: No abstract text available
Text: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch
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SUD50P06-15
O-252
SUD50P06-15-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUD50N03-11
O-252
SUD50N03-11-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUD50N03-12P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 a ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUD50N03-12P
2002/95/EC
O-252
SUD50N03-12P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085
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SQD50N03-06P
AEC-Q101
O-252
SQD50N03-06P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: rozo .3QQ D -n e l ^ M C tJ X -C B Q ± 'C O S t R & V m > 3 ' ° ^ * Ù 0 0 W/D* C & .3 5 J 2 5 Û P M . ± 0/0 *%t-3Z Tu*m Pœ toM .460 Pi. m3 ì .o ì ù NM .¿ 9& Û ? .d i. 03t i — 1 t.e& M w ~'±Mz Jtw *U 960 Mm. i -T A M A O S t!i Ü,S,A. n 1 ¡9 * 5 - 4 0 8 tfito » tê
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18APR11
18APR11
-70JASTSÃ
FOAM80S
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