Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9435DY
Si4435DY
Si4953DY
Si6435DQ
S-51361--Rev.
18-Dec-96
Si64
51361
Si94
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Si6802DQ
Abstract: No abstract text available
Text: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6802DQ G *Source Pins 2, 3, 6, and 7 must be tied common.
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Si6802DQ
S-49520--Rev.
18-Dec-96
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SUD45P03-15
Abstract: No abstract text available
Text: SUD45P03-15 P-Channel Enhancement-Mode Transistor Product Summary rDS on (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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SUD45P03-15
O-252
S-49520--Rev.
18-Dec-96
SUD45P03-15
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Si4947DY
Abstract: No abstract text available
Text: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET
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Si4947DY
S-49520--Rev.
18-Dec-96
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si9922
Abstract: Si9922DY
Text: Si9922DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.080 @ VGS = 4.5 V "4.0 0.090 @ VGS = 2.5 V "3.7 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si9922DY
S-49520--Rev.
18-Dec-96
si9922
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Si4936DY
Abstract: Si6954DQ Si9936DY
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3
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Si9936DY
Si4936DY
Si6954DQ
51310--Rev.
18-Dec-96
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Si4410DY
Abstract: Si4936DY Si6434DQ Si9410DY
Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8
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Si9410DY
Si4410DY
Si4936DY
Si6434DQ
S-51309--Rev.
18-Dec-96
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Si4948EY
Abstract: No abstract text available
Text: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET
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Si4948EY
S-49520--Rev.
18-Dec-96
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Si4947DY
Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
Text: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8
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Si9953DY
Si4947DY
Si9947DY
Si6953DQ
Si6955DQ
51296--Rev.
18-Dec-96
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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Si9934DY
Abstract: Si6943DQ Si9933ADY
Text: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1
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Si9933ADY
Si9934DY
Si6943DQ
S-51359--Rev.
18-Dec-96
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Si9936DY
Abstract: Si4936DY Si6954DQ
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V "3.9 Recommended upgrade: Si4936DY Lower profile/smaller size see: Si6954DQ D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3
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Si9936DY
Si4936DY
Si6954DQ
51310--Rev.
18-Dec-96
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77-1
Abstract: Si4558DY
Text: Si4558DY Complementary MOSFET Half-Bridge N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = –10 V "6 0.070 @ VGS = –4.5 V "4.4 S2 SO-8 G2 S1 1 8 D G1
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Si4558DY
S-49520--Rev.
18-Dec-96
77-1
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Untitled
Abstract: No abstract text available
Text: Si6459DQ Siliconix P-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 2 3 4 D Si6459DQ 8 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.
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Si6459DQ
S-49520--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. AA DIST R E V IS IO N S 22 LTR B D L .5 2 7 [1 3. 386] — f .14 [3.556] f 18DEC96 APVD DS EL ALL DIMENSIONS SHOWN ARE NOMINAL UNLESS
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31JAN92
8JUN92
09JUN92
09MAY94
J8-DEC-96
amp33741
/home/amp33741/edmread
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9424DY S e m i c o n d u c t o r s P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) rDS(on) (&) 12 I d (A) 0.025 @ VGs = -4-5 V ±7.7 0.033 @ VGS = -2.5 V ±6.6 is-v^ SO-8 °"1 Top View P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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9424DY
S-49520--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6802DQ S e m i c o n d u c t o r s N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V rDS(on) ( ^ ) Id (A) 0.075 @ VGS = 4.5 V ±3.3 0.110 @ VGs = 3.0 V ±2.7 20 TSSOP-8 , It O - — ‘ |- * S o u rc e P in s 2 , 3, 6 , a n d 7
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6802DQ
S-49520--Rev.
18-Dec-96
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Diode 31DQ
Abstract: It83 si6331dq
Text: T E M IC SÌ6331DQ Semiconductors Triple N -C h an n el 30-V D-S Rated M O S F E T P rod uct S u m m a r y V DS(V) 30 I d (A) r DS(on) (£2) 0.028 @ V gs = 10 V ± 5 .6 0.042 @ VGS = 4.5 V ± 4 .5 po T SS O P-28 *Source Pins 2, 3, 25, 26, and 27 must be tied common.
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6331DQ
S-49520--Rev.
18-Dec-96
Diode 31DQ
It83
si6331dq
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RESISTANCE11
Abstract: No abstract text available
Text: T e m ic SÌ9529DY Semiconductors Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Channel 20 P-Channel -12 rDS(on) (Q ) 0.03 @VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ Vqs = -4-5 V 0.074 @VGS =-2.5 V I d (A) ±6 ±5.2 ±5 ±4.1 1.5-^
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9529DY
S-49520--Rev.
18-Dec-96
S-49520---Rev.
RESISTANCE11
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6415DQ S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 rDS(on) (ß ) Id (A) 0.019 @ Vqs = -10 V ± 6.5 0.030 @ Vc,s = - 4.5 V ± 5.2 po*8 S* O TSSOP-8 "H i * S o u rc e P in s 2, 3, 6 and 7 m u s t b e tie d c o m m o n .
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6415DQ
S-49519--Rev.
18-Dec-96
S-49519--
8-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9922DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (^ ) 0.080 @ Vos = 4.5 V 0.090 @ Vos = 2.5 V I d (A) ±4.0 ±3.7 D Q SO-8 o— li Top View Ô s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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9922DY
S-49520--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6331DQ S em i co n d u c t or s Triple N-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) Id r DS(on) ( ^ ) 30 •m i '"04 (A) 0.028 @ VGs = 10 V ±5.6 0.042 @ VGs = 4.5 V ±4.5 p o '" 6 ' TSSOP-28 Di 2T| D i Si Œ 51 Cl Gi Œ m ID Si Di Œ
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6331DQ
TSSOP-28
S-49520--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9426DY S e m i c o n d u c t o r s N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 r DS(on) (Œ) I d (A) 0.0135 @ VGS = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 SO-8 N-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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9426DY
S-49520--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4559EY S e m i c o n d u c t o r s Dual N- and P-Channel 60-Y, 175°C Rated MOSFET Product Summary V d s V N-Channel r DS(on) ( ß ) I d (A ) 0.055 @ V os = 10 V ± 4.5 0.075 @ VGS = 4.5 V ± 3 .9 0.120 @ VGs = -10 V ± 3.1 0.150 @ VGS = -4 .5 V
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4559EY
S-49520--
18-Dec-96
18-Dec-%
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