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    Text: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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    PDF IRLI3303 1897IR