IRLI3303 Search Results

IRLI3303 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRLI3303		International Rectifier	HEXFET Power Mosfet		Original	PDF

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Text: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
IRFI840G Abstract: IRL3303 IRLI3303 Text: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V	Original	IRLI3303 O-220 IRFI840G IRL3303 IRLI3303	PDF
Untitled Abstract: No abstract text available Text: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated	OCR Scan	IRLI3303 1897IR	PDF
Untitled Abstract: No abstract text available Text: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm	OCR Scan	L13303	PDF