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    ROHM Semiconductor BD71850MWV-E2

    BD71850MWV INTEGRATES ALL POWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BD71850MWV-E2 Reel 7,500 1,500
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    • 10000 $2.06379
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    BD71850MWV-E2 Cut Tape 3,067 1
    • 1 $4.24
    • 10 $3.56
    • 100 $2.8797
    • 1000 $2.55974
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    Avnet Americas BD71850MWV-E2 Ammo Pack 14 Weeks, 1 Days 1
    • 1 $4.56
    • 10 $4.26
    • 100 $3.65
    • 1000 $3.65
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    BD71850MWV-E2 Reel 17 Weeks 1,500
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    • 10000 $2.20176
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    Mouser Electronics BD71850MWV-E2 9,167
    • 1 $4.23
    • 10 $3.56
    • 100 $2.88
    • 1000 $2.23
    • 10000 $2.04
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    Avnet Asia BD71850MWV-E2 24 Weeks 1,500
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    Chip1Stop BD71850MWV-E2 Cut Tape 86
    • 1 $3.79
    • 10 $3.41
    • 100 $2
    • 1000 $2
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    CoreStaff Co Ltd BD71850MWV-E2 990
    • 1 $7.464
    • 10 $4.105
    • 100 $2.932
    • 1000 $2.507
    • 10000 $2.507
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    New Advantage Corporation BD71850MWV-E2 10,500 1
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    • 10000 $3.03
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    Globetek Inc CSP11850M68LSP(R)

    CBL ASSY 2.1MM PLG-PLG RND 2.23'
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    DigiKey CSP11850M68LSP(R) Bulk 770 1
    • 1 $2.83
    • 10 $2.568
    • 100 $2.2624
    • 1000 $1.64024
    • 10000 $1.52712
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    Globetek Inc USBA11850M52XLCP(R

    CBL ASY BARREL PL-USB A PL 1.64'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey USBA11850M52XLCP(R Bulk 247 1
    • 1 $7.97
    • 10 $7.172
    • 100 $6.4099
    • 1000 $6.1
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    Globetek Inc USBA11850M52XCCP(R)

    CBL ASY BARREL PL-USB A PL 1.64'
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    DigiKey USBA11850M52XCCP(R) Bulk 246 1
    • 1 $7.97
    • 10 $7.172
    • 100 $6.4099
    • 1000 $6.1
    • 10000 $6.1
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    Globetek Inc CMB11850M5MICB4(R)

    CBL ASSY JK-USB MCR B M 1.64'
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    DigiKey CMB11850M5MICB4(R) Bulk 235 1
    • 1 $7.76
    • 10 $6.981
    • 100 $6.2391
    • 1000 $5.93752
    • 10000 $5.93752
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    Find more 1850M price and stock on Findchips.com

    1850M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD1500SOT89

    Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
    Text: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF filtronic Solid State 33id

    SSG 23 TRANSISTOR

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD1500DFN 1850MHZ) 2002/95/EC) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA SSG 23 TRANSISTOR BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors

    FPD6836SOT343

    Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
    Text: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD6836SOT343 1850MHZ) 2002/95/EC) FPD6836SOT343 22A114. MIL-STD-1686 MIL-HDBK-263. FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370
    Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant


    Original     		PDF FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370

    transistor bc 564

    Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540

    Untitled

    Abstract: No abstract text available
    Text: Datasheet UN06B02 UMTS Band 2/25 CDMA2000 BC1/14 Power Amplifier IC 1850MHz to 1915MHz Applications Features • WCDMA handset ■ HSDPA ■ High efficiency operation 47% @ 28.5dBm ■ HSUPA ■ LTE ■ Small, low profile LGA package 3mm x 3mm x 0.85mm (1mm Max)


    Original     		PDF UN06B02 CDMA2000 BC1/14 1850MHz 1915MHz) CDMA2000

    HR-3U

    Abstract: HR-3U 1850 370mA sanyo HR-3U
    Text: Cell Type HR-3U Specifications Type : Nickel-Metal Hydride Battery Capacity Size : AA Consumer Type Typical 1850mAh Minimum 1750mAh 1 14.2 mm Nominal Voltage 1.2V Charging Current x Time Charge Condition Fast Charge 2) 1850 mA x about 1.1h Fast Charge 2)


    Original     		PDF 1850mAh 1750mAh 30days 90days 90days 1000Hz) 185mA 370mA 1850mA 370mA HR-3U HR-3U 1850 sanyo HR-3U

    high power transistor s-parameters

    Abstract: No abstract text available
    Text: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD750SOT343 1850MHZ) 2002/95/EC) FPD750SOT343 EB750SOT343-BB EB750SOT343-BA EB750SOT343-BC 22-A114. EB750SOT343-BE EB750SOT343-BG high power transistor s-parameters

    Untitled

    Abstract: No abstract text available
    Text: Control No. Tentative Specification Preliminary : ARP-481500 C Established on Aug 20, 2013 1. 1850MHz Band 90deg Chip Hybrid Coupler TYPE No: HMD815D RoHS correspondence article 2. Appearance and Construction 2.1 Dimension (Unit: mm) 1.25 +/- 0.2 d G G e


    Original     		PDF ARP-481500 1850MHz 90deg HMD815D 15typ. 20typ. 25degC) 105degC) 35degC

    MW500-1084

    Abstract: No abstract text available
    Text: Voltage Controlled Oscillators MW500-1084 1850MHz to 2000MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1850MHz to 2000MHz 0.5/8 V 7 +/- 2 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -98 typ dBc/Hz


    Original     		PDF MW500-1084 1850MHz 2000MHz MW500-1084

    c124

    Abstract: C1242 C124-2 0603 1940 C-124
    Text: STB7003 TRI-BAND GSM/DCS/PCS LNA PRELIMINARY DATA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING


    Original     		PDF STB7003 950MHz 1850MHz 1950MHz MSOP10-EP STB7003 c124 C1242 C124-2 0603 1940 C-124

    GSM1900

    Abstract: GSM1800
    Text: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard specification System GSM1800/GSM1900 Rx 50/150ohms Date FAR-G6QC-1G9600-N2FA Version 1.0aa Part Number March 31, 2010 - Table 1.Electrical specifications(Filter 1) Pass Band (1805-1850MHz) Item Condition


    Original     		PDF GSM1800/GSM1900 50/150ohms) FAR-G6QC-1G9600-N2FA 1805-1850MHz) DC-1300 GSM1900 GSM1800

    FPD750SOT343E

    Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201
    Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201

    SMD MARKING CODE A01

    Abstract: No abstract text available
    Text: SMD 1880MHz SAW FILTER AFS1880S6-01 *RoHS COMPLIANT 2 x 2 x 1.0mm | | | | | | | | | | | | | | | STANDARD SPECIFICATIONS: CHARACTERISTICS Center Frequency Fc @ 25°C Insertion Loss @ 1805 MHz ~ 1910 MHz Amplitude Ripple pk-pk @ 1850MHz ~ 1910 MHz Input VSWR


    Original     		PDF 1880MHz AFS1880S6-01 1850MHz SMD MARKING CODE A01

    FILTRONIC CROSS REFERENCE

    Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		PDF FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB MIL-HDBK-263 Filtronic Compound Semiconductors

    SSG 23 TRANSISTOR

    Abstract: 1P503 FPM2750QFN Filtronic Components
    Text: FPM2750QFN Datasheet v2.5 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)


    Original     		PDF FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 SSG 23 TRANSISTOR 1P503 Filtronic Components

    FPD750

    Abstract: SSG 23 TRANSISTOR Filtronic Components FPM2750QFN 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347
    Text: FPM2750QFN Preliminary Datasheet v2.4 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE FEATURES: • • • • • • • PACKAGE: Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Output IP3: 32dBm (40mA); 36dBm (100)


    Original     		PDF FPM2750QFN 1850MHz 32dBm 36dBm 18dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 MIL-HDBK-263. FPD750 SSG 23 TRANSISTOR Filtronic Components 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347

    Untitled

    Abstract: No abstract text available
    Text: JXWBLB-S-BP-1710-1990-CE-5 1850MHz Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-S-BP-1710-1990-CE-5 1 JXWBLB-S-BP-1710-1990-CE-5 1850MHz Band Pass Filter Technical Specification 1850 Centre Frequency[f0] MHz Bandwidth[BW] f0±140


    Original     		PDF JXWBLB-S-BP-1710-1990-CE-5 1850MHz 1600MHz 2130MHz 280SA 50MHz

    Untitled

    Abstract: No abstract text available
    Text: Datasheet UN06B01 UMTS Band 1 CDMA2000 BC6 Power Amplifier IC UMTS Band 2/25 CDMA2000 BC1/14 Power Amplifier IC 1850MHz to 1980MHz Applications Features • WCDMA handset ■ HSDPA ■ HSUPA ■ LTE ■ High efficiency operation 48% @ 28.25dBm ■ Small, low profile LGA package


    Original     		PDF UN06B01 CDMA2000 BC1/14 1850MHz 1980MHz) 25dBm CDMA2000

    SW SPDT

    Abstract: C128 STB7003 C124 kit C124-2 c1281
    Text: STB7003 TRI-BAND GSM/DCS/PCS LNA • SUPPLY VOLTAGE 2.8V • LOW CURRENT CONSUMPTION • VERY LOW NOISE FIGURE: NF=1.5dB @ 950MHz NF=1.9dB @ 1850MHz NF=2dB @ 1950MHz • DIGITAL GAIN CONTROL MSOP10-EP exposed pad ORDER CODE STB7003 BRANDING 7003 APPLICATIONS


    Original     		PDF STB7003 950MHz 1850MHz 1950MHz MSOP10-EP STB7003 SW SPDT C128 C124 kit C124-2 c1281

    LA1018

    Abstract: No abstract text available
    Text: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER Frequency Range 1850MHz to 2050MHz GND 2 Internally Matched to 50 on All RF Ports SCN 3 Analog Voltage Variable Attenuator with 3.3V Control


    Original     		PDF RFLA1018Variable RFLA1018 16-Pin, 1850MHz 2050MHz DS120119 LA1018

    stepper

    Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
    Text: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency


    Original     		PDF FPD750DFN 1850MHZ) FPD750DFN MIL-STD-1686 MIL-HDBK-263. EB750DFN-BB 900MHz EB750DFN-BA 85GHz stepper TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750SOT89 MIL-HDBK-263

    FPD1500SOT89

    Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
    Text: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, 09DB FPD1500SOT89CE

    IBM REV 2.8

    Abstract: rev 1.5 ibm ibm rev 1.5
    Text: IBM 43RF4111 IBM 43RF4111EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band VCO Advance Features • 880M H z/1850M H z center frequency for GSM Tri-Band • Flexible design w ith m ultiband VC O output • E fficiency and pow er m anagem ent, ideal for b attery m obile design


    OCR Scan     		PDF 43RF4111 43RF4111EV z/1850M -95/IS-98 IS-136. TSSOP-16 sgrf41111 IBM43RF4111 IBMSGRF4111 IBM REV 2.8 rev 1.5 ibm ibm rev 1.5