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JRH Electronics G8902-1816-5BA CONNECTOR
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DigiKey	G8902-1816-5BA	Bulk			1	1 $1449.06 10 $1449.06 100 $1449.06 1000 $1449.06 10000 $1449.06	Buy Now
Glenair Inc G8902-1816-5BA G8902-1816-5Ba \|Glenair G8902-1816-5BA
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Newark	G8902-1816-5BA	Bulk	67		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
FUJITSU Semiconductor Limited MB81V18165B-60PFTN
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Bristol Electronics	MB81V18165B-60PFTN		5,399			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Hitachi Ltd HM51W18165BTT6
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Bristol Electronics	HM51W18165BTT6		516			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NPNX NN5118165BJ-50
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Bristol Electronics	NN5118165BJ-50		432			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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18165B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HB56HW165DB-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-571 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BTT) sealed in TSOP package and 1	OCR Scan	HB56HW165DB-6B/7B 576-word 64-bit ADE-203-571 HB56HW 165DB 16-Mbit HM51W 18165BTT) 24C02)	PDF
Untitled Abstract: No abstract text available Text: HB56HW165DB-6BL/7BL 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-572 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BLTT) sealed in TSOP package and 1	OCR Scan	HB56HW165DB-6BL/7BL 576-word 64-bit ADE-203-572 HB56HW 165DB 16-Mbit HM51W 18165BLTT) 24C02)	PDF
18165B Abstract: No abstract text available Text: V G 26 V (S)18165B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is	OCR Scan	18165B 16-Bit 42-pin 50/44-pin 18160BT-6 18160BT-7 400mil	PDF
VG264265B Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D	OCR Scan	256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference	PDF
Untitled Abstract: No abstract text available Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]1 130[45]*3	OCR Scan	0A-60L 8160A B81V16160B-50 B81V16160B-60 16160B-50L 16160B-60L 18160B-50 B81V1816CB-60 B-50L	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70	OCR Scan	1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50	PDF
64mb edo dram simm Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt	OCR Scan	VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm	PDF
d8430 Abstract: 18165BSJ-60 BST60 Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 18165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time	OCR Scan	16-Bit 3116165BSJ/BST -5Q/-60/-70 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 3118165BSJ/BST-70) 3116165BSJ/BST-50) 3116165BSJ/BST-60) d8430 18165BSJ-60 BST60	PDF
Untitled Abstract: No abstract text available Text: ^ 7 2 4 0 TOSHIBA 002Ö3T7 TIT 18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The 18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The 18165BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide	OCR Scan	TC51Y18165BFT-70 TC51V18165BFT B-146 002A404 DR16190695 TC51V18165BFT-70	PDF
Untitled Abstract: No abstract text available Text: HM51W16165B Series 18165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-541 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi HM51W16165B Series, 18165B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS	OCR Scan	HM51W16165B HM51W18165B 1048576-word 16-bit ADE-203-541 576-word 16-bit.	PDF
51v18165 Abstract: 658J A8303 TC51V18165 Text: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM	OCR Scan	18165B 18165BJS/BFTS SOJ42 73MAX TC5W18165BJS/BFTS TSOP50 51V18165BJS/B FTS-60 35MAX 51v18165 658J A8303 TC51V18165	PDF
5116 RAM Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60 Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 18165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)	OCR Scan	16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yÃ 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)	OCR Scan	HYB3116165BSJ-60) HYB3116165BSJ-70) HYB5118165BSJ HYB5116165BSJ 35b05 DG71b30	PDF
lg 15.6 pinout Abstract: tp 147 Text: 18165B,18165B 1M.2M x 64-Bit Dynamic RAM Module_ VIS H Description The 18165B and 18165B are 1 M x 64-bit and 2 M X 64-bit dual-in-line dynam ic RAM m odules DIM M . It is mounted by 4/8 pieces o f 1M X 16 DRAM (18165BB), and	OCR Scan	VE16418165B VE26418165B 64-Bit VG26V18165BB) lg 15.6 pinout tp 147	PDF

VG2618165BJ Abstract: VG2618165 VM23218165 jcsr MAX3242 VM23218165B Text: VM 18165B,VM 18165B 1M,2M x 32-Bit Dynamic RAM Module v is m D escription The 18165B and 18165B are 1 M x 32-bit and 2M X 32-bit dynamic RAM modules. It is mounted by 2/4 pieces of 1M x 16 DRAM 18165BB , dnd each in a standard 42 pin plastic SOJ packages. The 18165B and 18165B makes high	OCR Scan	13218165B 23218165B 32-Bit VM13218165B VM23218165B VG2618165BB) VG2618165BJ VG2618165 VM23218165 jcsr MAX3242	PDF
VG2618160 Abstract: HA2010 Text: viswi V M 13218160B ,V M 23218160B 1M ,2M x 32-B it Dynamic RAM Module_ Description The V M 13218160B and VM23218160B are 1M x 32-bit and 2M x 32-bit dynam ic RAM modules. It is m ounted by 2/4 pieces o f 1M x 16 DRAM VG2618160B ,and each in a standard	OCR Scan	13218160B 23218160B 13218160B VM23218160B 32-bit VG2618160B) VM13218160B VG2618160 HA2010	PDF
29F400TA Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)	OCR Scan	MBM29F002T/B 29F002T/B-X MBM29LV002T/B 29LV002T/B-X 29LV004B 29LV004T 29LV008B 29LV008T 29F016 29F016A 29F400TA FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA	PDF