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    18165B Price and Stock

    JRH Electronics G8902-1816-5BA

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    DigiKey G8902-1816-5BA Bulk 1
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    Glenair Inc G8902-1816-5BA

    G8902-1816-5Ba |Glenair G8902-1816-5BA
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    Newark G8902-1816-5BA Bulk 67 1
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    FUJITSU Semiconductor Limited MB81V18165B-60PFTN

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    Bristol Electronics MB81V18165B-60PFTN 5,399
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    Hitachi Ltd HM51W18165BTT6

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    Bristol Electronics HM51W18165BTT6 516
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    NPNX NN5118165BJ-50

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    Bristol Electronics NN5118165BJ-50 432
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    Find more 18165B price and stock on Findchips.com

    18165B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HB56HW165DB-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-571 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BTT) sealed in TSOP package and 1


    OCR Scan     		PDF HB56HW165DB-6B/7B 576-word 64-bit ADE-203-571 HB56HW 165DB 16-Mbit HM51W 18165BTT) 24C02)

    Untitled

    Abstract: No abstract text available
    Text: HB56HW165DB-6BL/7BL 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-572 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW 165DB is a 1M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W 18165BLTT) sealed in TSOP package and 1


    OCR Scan     		PDF HB56HW165DB-6BL/7BL 576-word 64-bit ADE-203-572 HB56HW 165DB 16-Mbit HM51W 18165BLTT) 24C02)

    18165B

    Abstract: No abstract text available
    Text: V G 26 V (S)18165B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is


    OCR Scan     		PDF 18165B 16-Bit 42-pin 50/44-pin 18160BT-6 18160BT-7 400mil

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    Untitled

    Abstract: No abstract text available
    Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3


    OCR Scan     		PDF 0A-60L 8160A B81V16160B-50 B81V16160B-60 16160B-50L 16160B-60L 18160B-50 B81V1816CB-60 B-50L

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


    OCR Scan     		PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50

    64mb edo dram simm

    Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
    Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt


    OCR Scan     		PDF VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm

    d8430

    Abstract: 18165BSJ-60 BST60
    Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 18165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time


    OCR Scan     		PDF 16-Bit 3116165BSJ/BST -5Q/-60/-70 3118165BSJ/BST 3118165BSJ/BST-50) 3118165BSJ/BST-60) 3118165BSJ/BST-70) 3116165BSJ/BST-50) 3116165BSJ/BST-60) d8430 18165BSJ-60 BST60

    Untitled

    Abstract: No abstract text available
    Text: ^ 7 2 4 0 TOSHIBA 002Ö3T7 TIT 18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The 18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The 18165BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide


    OCR Scan     		PDF TC51Y18165BFT-70 TC51V18165BFT B-146 002A404 DR16190695 TC51V18165BFT-70

    Untitled

    Abstract: No abstract text available
    Text: HM51W16165B Series 18165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-541 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi HM51W16165B Series, 18165B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS


    OCR Scan     		PDF HM51W16165B HM51W18165B 1048576-word 16-bit ADE-203-541 576-word 16-bit.

    51v18165

    Abstract: 658J A8303 TC51V18165
    Text: , IN TEG RATED TO SH IB A FO SH ibA M O S D IGITAL IN T EG R A TED T C 5 1 V 1 8 1 6 5 B J S / B F T S - 60 T C 5 1 V 1 8 1 6 5 B J S / B F T S - 70 CIRCUIT TECH N ICAL DATA . CIRCU IT SILICON GATE CMOS TENTATIVE DA TA 1,048,576 W O R D x 16 BIT EDO HYPER PAGE DYNAM IC RAM


    OCR Scan     		PDF 18165B 18165BJS/BFTS SOJ42 73MAX TC5W18165BJS/BFTS TSOP50 51V18165BJS/B FTS-60 35MAX 51v18165 658J A8303 TC51V18165

    5116 RAM

    Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
    Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 18165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)


    OCR Scan     		PDF 16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yà 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)


    OCR Scan     		PDF HYB3116165BSJ-60) HYB3116165BSJ-70) HYB5118165BSJ HYB5116165BSJ 35b05 DG71b30

    lg 15.6 pinout

    Abstract: tp 147
    Text: 18165B,18165B 1M.2M x 64-Bit Dynamic RAM Module_ VIS H Description The 18165B and 18165B are 1 M x 64-bit and 2 M X 64-bit dual-in-line dynam ic RAM m odules DIM M . It is mounted by 4/8 pieces o f 1M X 16 DRAM (18165BB), and


    OCR Scan     		PDF VE16418165B VE26418165B 64-Bit VG26V18165BB) lg 15.6 pinout tp 147

    VG2618165BJ

    Abstract: VG2618165 VM23218165 jcsr MAX3242 VM23218165B
    Text: VM 18165B,VM 18165B 1M,2M x 32-Bit Dynamic RAM Module v is m D escription The 18165B and 18165B are 1 M x 32-bit and 2M X 32-bit dynamic RAM modules. It is mounted by 2/4 pieces of 1M x 16 DRAM 18165BB , dnd each in a standard 42 pin plastic SOJ packages. The 18165B and 18165B makes high


    OCR Scan     		PDF 13218165B 23218165B 32-Bit VM13218165B VM23218165B VG2618165BB) VG2618165BJ VG2618165 VM23218165 jcsr MAX3242

    VG2618160

    Abstract: HA2010
    Text: viswi V M 13218160B ,V M 23218160B 1M ,2M x 32-B it Dynamic RAM Module_ Description The V M 13218160B and VM23218160B are 1M x 32-bit and 2M x 32-bit dynam ic RAM modules. It is m ounted by 2/4 pieces o f 1M x 16 DRAM VG2618160B ,and each in a standard


    OCR Scan     		PDF 13218160B 23218160B 13218160B VM23218160B 32-bit VG2618160B) VM13218160B VG2618160 HA2010

    29F400TA

    Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
    Text: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)


    OCR Scan     		PDF MBM29F002T/B 29F002T/B-X MBM29LV002T/B 29LV002T/B-X 29LV004B 29LV004T 29LV008B 29LV008T 29F016 29F016A 29F400TA FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA