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    18-12 049 TRANSISTOR Search Results

    18-12 049 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    18-12 049 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SZA-2044

    Abstract: SZA-2044Z
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g EDS-103612 SZA-2044Z

    SZA2044ZPCK-EVB2

    Abstract: SZA-2044 SZA2044 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5 V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g SZA2044 SZA2044ZPCK-EVB2 DS100266 SZA2044ZPCK-EVB2 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic

    mallory 150 series

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this


    Original     		PDF Inte153 MRF20030R mallory 150 series

    transistor 2.4GHz amplifier schematic wifi

    Abstract: land pattern for 0402 cap
    Text: SZA-2044 Z SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 700MHz 11b/g DS121211 SZA2044ZSQ SZA2044ZSR transistor 2.4GHz amplifier schematic wifi land pattern for 0402 cap

    transistor 2.4GHz amplifier schematic wifi

    Abstract: schematic wifi board
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT


    Original     		PDF SZA-2044 11b/g DS110620 SZA2044ZSQ SZA2044ZSR SZA2044Z SZA2044ZPCK-EVB2 transistor 2.4GHz amplifier schematic wifi schematic wifi board

    Untitled

    Abstract: No abstract text available
    Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor


    Original     		PDF SZA-2044 11b/g EDS-103612

    NE94433-T1B

    Abstract: 2SC3545 2SC4184 NE944 NE94430 NE94430-T2 NE94432 NE94433 0840 057 MICROWAVE TRANSISTOR
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    Original     		PDF NE944 NE944 NE94430-T2 NE94433-T1B 24-Hour NE94433-T1B 2SC3545 2SC4184 NE94430 NE94430-T2 NE94432 NE94433 0840 057 MICROWAVE TRANSISTOR

    BD136

    Abstract: MJD47 MRF20030R
    Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this


    Original     		PDF MRF20030R/D MRF20030R BD136 MJD47 MRF20030R

    Motorola 946

    Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
    Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this


    Original     		PDF MRF20030R/D MRF20030R Motorola 946 MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this


    Original     		PDF MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030

    2SC3544

    Abstract: NE94430 2SC3545 2SC4184 NE944 NE94432 NE94433 S21E
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    Original     		PDF NE944 NE944 CONDITI17 34-6393/FAX 2SC3544 NE94430 2SC3545 2SC4184 NE94432 NE94433 S21E

    MRF586

    Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
    Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and


    OCR Scan     		PDF MRF586 MRF587 5-10pF 15kHz MRF506 Motorola AR 164 MRF587 MRF587 equivalent

    bc 206 transistor

    Abstract: WJA75 WJA75-3 WJ-a75-3
    Text: WJ-A75-3 / SMA75-3 10 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN: 20.5 dB TYP. ♦ LOW NOISE: 2.3 dB (TYP.) Outline Drawings Specifications51 A75-3 Typical Characteristics Frequency (Min.) Small Signal Gain (Min.)


    OCR Scan     		PDF WJ-A75-3 SMA75-3 A75-3 50-ohm 000713b bc 206 transistor WJA75 WJA75-3

    zt158

    Abstract: BD 149 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF IS22I MRF20030 zt158 BD 149 transistor

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF 1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry


    OCR Scan     		PDF NE944 NE94430 2SC4184 NE94430-T2 NE94433-T1B 24-Hour

    MA4T64400

    Abstract: low noise transistors MA4T645 MA4T644
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t


    OCR Scan     		PDF A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644

    2SC3544

    Abstract: IC sn 74 ls 2000
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry


    OCR Scan     		PDF NE944 IS12I IS12S21I b427525 00L5770 2SC3544 IC sn 74 ls 2000

    Untitled

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz


    OCR Scan     		PDF AT-01672 AT-01672 duced70

    PN126S

    Abstract: ON1503 PN7103
    Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10


    OCR Scan     		PDF PN312C PN312E PN3104 PN3106 PN3206 PN312D PN322D PN3105 PN3112 PN3108 PN126S ON1503 PN7103

    EZ 707

    Abstract: 2SC3544 EZ 0710 EZ 728
    Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    OCR Scan     		PDF NE944 EZ 707 2SC3544 EZ 0710 EZ 728

    BSW68

    Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
    Text: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.


    OCR Scan     		PDF T0220SM 0220M BSS44 BSV64 BSW66A BSW67A BSW68 BSW68A BSX62 BSX63 2N3055 mj2955 50004 2N3440 ST bdy90